摘要:
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
摘要:
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
摘要:
A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.
摘要:
Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.
摘要:
A drive controller varies a bias voltage applied from a bias supply to a conversion layer based on the presence or absence of binning, that is, for a case of carrying out binning where switching elements are driven on the basis of a plurality of rows at a time by a gate drive circuit, and for a case of carrying out no binning where the switching elements are driven on a row-by-row basis by the gate drive circuit. Therefore, in the case of a fluoroscopic mode for acquiring images with binning, a lowering of a dynamic range can be suppressed. In the case of a radiographic mode with no binning, spatial resolution can be made high. That is, a high dynamic range and high spatial resolution can be optimized according to modes of operation.
摘要:
According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.
摘要:
Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.
摘要:
The radiation image pickup apparatus of this invention can obtain an accurate temperature characteristic of dark current noise, the dark current noise being caused by dark current flowing through an X-ray conversion layer, by obtaining dark image signals at varied times for accumulating in capacitors charge signals converted by an X-ray converting layer. Consequently, the noise due to the dark current can be removed with high accuracy by removing periodically acquired offset signals from X-ray detection signals acquired at a time of X-ray image pickup, and correcting variations of the dark current noise due to a difference in temperature between a time of offset signal acquisition and the time of X-ray image pickup, using the temperature characteristic of the dark current noise.
摘要:
The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
摘要:
A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.