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    Nonvolatile memory element having a thin platinum containing electrode
    3.
    发明授权
    Nonvolatile memory element having a thin platinum containing electrode 有权
    具有薄铂电极的非易失性存储元件

    公开(公告)号：US08445885B2

    公开(公告)日：2013-05-21

    申请号：US13132058

    申请日：2009-12-01

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x

    摘要翻译： 非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。 第一和第二电极中的至少一个包括含铂层。 电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层 所述含铂层并且与所述含铂层物理接触。 包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

    Method for driving variable resistance element, and nonvolatile memory device
    6.
    发明授权
    Method for driving variable resistance element, and nonvolatile memory device 有权
    用于驱动可变电阻元件的方法和非易失性存储器件

    公开(公告)号：US09142289B2

    公开(公告)日：2015-09-22

    申请号：US13883075

    申请日：2012-06-11

    申请人： Takeshi Takagi ,  Koji Katayama

    发明人： Takeshi Takagi ,  Koji Katayama

    IPC分类号： G11C11/21 ,  G11C13/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/32

    摘要： A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VH1 and a voltage value of the other high resistance writing voltage pulse applied subsequently is VH2, VH1>VH2 is satisfied.

    摘要翻译： 用于驱动可变电阻元件和非易失性存储器件的驱动方法，其实现稳定的存储操作。 在低电阻写入处理中，具有负极性的低电阻写入电压脉冲在包括在可变电阻元件中的可变电阻层上施加一次，而在高电阻写入处理中，具有正极性的高电阻写入电压脉冲是 施加两倍以上的同一可变电阻层。 这里，当高电阻写入电压脉冲之一的电压值为VH1，随后施加的另一个高电阻写入电压脉冲的电压值为VH2时，满足VH1> VH2。

    Nonvolatile memory device and method for programming the same
    7.
    发明授权
    Nonvolatile memory device and method for programming the same 有权
    非易失性存储器件及其编程方法

    公开(公告)号：US08565004B2

    公开(公告)日：2013-10-22

    申请号：US13379463

    申请日：2011-06-28

    申请人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

    发明人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

    摘要： A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).

    摘要翻译： 根据本发明的非易失性存储器件的编程方法包括从多个存储单元（11）中检测过低电阻单元的步骤（S101）; 将负载电阻器（121）的电阻值改变为小于第一电阻值的第二电阻值的步骤（S103）; 以及通过对包括过低电阻单元的串联电路和具有第二电阻值的负载电阻器（121）施加电压脉冲，使包含在过低电阻单元中的可变电阻元件（105）移位 到具有大于第一低电阻状态的电阻值的第二高电阻状态（S104）。

    METHOD FOR DRIVING VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE MEMORY DEVICE
    9.
    发明申请
    METHOD FOR DRIVING VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE MEMORY DEVICE 有权
    驱动可变电阻元件的方法和非易失性存储器件

    公开(公告)号：US20130223131A1

    公开(公告)日：2013-08-29

    申请号：US13883075

    申请日：2012-06-11

    申请人： Takeshi Takagi ,  Koji Katayama

    发明人： Takeshi Takagi ,  Koji Katayama

    IPC分类号： G11C13/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/32

    摘要： A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VH1 and a voltage value of the other high resistance writing voltage pulse applied subsequently is VH2, VH1>VH2 is satisfied.

    摘要翻译： 用于驱动可变电阻元件和非易失性存储器件的驱动方法，其实现稳定的存储操作。 在低电阻写入处理中，具有负极性的低电阻写入电压脉冲在包括在可变电阻元件中的可变电阻层上施加一次，而在高电阻写入处理中，具有正极性的高电阻写入电压脉冲是 施加两倍以上的同一可变电阻层。 这里，当高电阻写入电压脉冲之一的电压值为VH1，随后施加的另一个高电阻写入电压脉冲的电压值为VH2时，满足VH1> VH2。

    METHOD FOR DRIVING NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE
    10.
    发明申请
    METHOD FOR DRIVING NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE 有权
    驱动非易失性存储器元件的方法和非易失性存储器件

    公开(公告)号：US20130010530A1

    公开(公告)日：2013-01-10

    申请号：US13636258

    申请日：2011-03-18

    申请人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

    发明人： Koji Katayama ,  Takeshi Takagi ,  Mitsuteru Iijima

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C2213/72 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： Provided is a method for driving a non-volatile memory element in which a variable resistance element including a first electrode, a second electrode, and a variable resistance layer capable of reversibly changing between a high resistance state and a low resistance state with application of electrical signals having different polarities is connected in series with a current steering element having bidirectional rectifying characteristics with respect to an applied voltage. After the non-volatile memory element is manufactured, the resistance value of the variable resistance layer is reduced from a resistance value in the initial resistance state higher than that in the high resistance state by applying, to the non-volatile memory element, a voltage pulse having the polarity identical to that of the voltage pulse for changing the variable resistance layer from the low resistance state to the high resistance state in the normal operations.

    摘要翻译： 提供一种用于驱动非易失性存储元件的方法，其中包括第一电极，第二电极和可变电阻层的可变电阻元件，所述可变电阻元件能够通过施加电而在高电阻状态和低电阻状态之间可逆地变化 具有不同极性的信号与具有相对于施加电压的双向整流特性的电流导向元件串联连接。 在制造非易失性存储元件之后，通过向非易失性存储元件施加电压，可变电阻层的电阻值比初始电阻状态中的电阻值高于高电阻状态的电阻值 脉冲具有与用于在正常操作中将可变电阻层从低电阻状态改变为高电阻状态的电压脉冲的极性相同的脉冲。