RF MODULE CONTROL INTERFACE
    2.
    发明申请
    RF MODULE CONTROL INTERFACE 审中-公开
    射频模块控制接口

    公开(公告)号:US20120309325A1

    公开(公告)日:2012-12-06

    申请号:US13314277

    申请日:2011-12-08

    IPC分类号: H04B1/38 H04B1/26

    CPC分类号: H04B1/40

    摘要: Disclosed are various embodiments for an extremely high frequency transceiver employing a baseband module and a radio-frequency module. The baseband module and the radio-frequency module are connected by a coaxial cable. The coaxial cable carries a multiplexed signal that may include a direct current component, a clock reference, a control signal, and an intermediate frequency signal. The control signal encodes one or more commands for controlling the operation of the radio-frequency module. Multiple radio-frequency modules may be employed in some embodiments.

    摘要翻译: 公开了采用基带模块和射频模块的极高频收发器的各种实施例。 基带模块和射频模块通过同轴电缆连接。 同轴电缆承载可包括直流分量,时钟参考,控制信号和中频信号的复用信号。 控制信号编码用于控制射频模块的操作的一个或多个命令。 在一些实施例中可以采用多个射频模块。

    Method for manufacturing semiconductor device and semiconductor device
    3.
    发明授权
    Method for manufacturing semiconductor device and semiconductor device 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号:US08299548B2

    公开(公告)日:2012-10-30

    申请号:US13050813

    申请日:2011-03-17

    IPC分类号: H01L29/78

    摘要: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include simultaneously forming a first field insulating film and at least one second field insulating film on a front face side of a semiconductor layer. The at least one second field insulating film is separated from the first field insulating film and thinner than the first field insulating film. The method can include forming a drift region of a first conductivity type in a region of the semiconductor layer including the first field insulating film and the second field insulating film. The method can include forming a drain region of the first conductivity type in the front face of the semiconductor layer on a side of the first field insulating film. In addition, the method can include forming a source region of the first conductivity type in the front face of the semiconductor layer on a side of the second field insulating film.

    摘要翻译: 根据一个实施例,公开了一种用于制造半导体器件的方法。 该方法可以包括在半导体层的正面侧同时形成第一场绝缘膜和至少一个第二场绝缘膜。 所述至少一个第二场绝缘膜与所述第一场绝缘膜分离并且比所述第一场绝缘膜更薄。 该方法可以包括在包括第一场绝缘膜和第二场绝缘膜的半导体层的区域中形成第一导电类型的漂移区。 该方法可以包括在第一场绝缘膜一侧的半导体层的正面中形成第一导电类型的漏区。 此外,该方法可以包括在第二场绝缘膜的一侧在半导体层的正面形成第一导电类型的源极区域。

    CERAMIC GREEN BODY AND METHOD FOR PRODUCING THE SAME
    5.
    发明申请
    CERAMIC GREEN BODY AND METHOD FOR PRODUCING THE SAME 失效
    陶瓷绿体及其生产方法

    公开(公告)号:US20100055436A1

    公开(公告)日:2010-03-04

    申请号:US12544424

    申请日:2009-08-20

    IPC分类号: B32B18/00 C04B35/00

    摘要: The ceramic slurry is prepared by mixing a ceramic powder, a solvent, a dispersion medium, an isocyanate, a polyol, and a catalyst for accelerating a urethane reaction between the isocyanate and the polyol. A temperature-sensitive catalyst, which substantially exhibits a catalyst function only within a specific temperature range including an active temperature and higher than room temperature, is used as the catalyst. In a solidifying and drying step performed after a molding step of the slurry at room temperature, the solidification/drying temperature is set to be a high temperature within the range (within the specific temperature range) relatively close to the active temperature of the temperature-sensitive catalyst, and this temperature is maintained. Thus, the catalyst function can sufficiently be exhibited under high temperature.

    摘要翻译: 通过混合陶瓷粉末,溶剂,分散介质,异氰酸酯,多元醇和用于促进异氰酸酯和多元醇之间的氨基甲酸酯反应的催化剂来制备陶瓷浆料。 作为催化剂,使用了仅在特定的温度范围内具有催化剂功能的温度敏感性催化剂,其特征在于温度高于室温。 在室温下,在浆料的成型工序后进行的固化干燥工序中,将凝固/干燥温度设定为相对接近温度 - 温度范围的有效温度的范围内(特定温度范围)内的高温, 敏感催化剂,并保持该温度。 因此,可以充分地在高温下显示催化剂功能。

    Semiconductor device capable of adjusting output impedance of external semiconductor device and output impedance adjusting method
    6.
    发明授权
    Semiconductor device capable of adjusting output impedance of external semiconductor device and output impedance adjusting method 有权
    能够调整外部半导体器件的输出阻抗的半导体器件和输出阻抗调整方法

    公开(公告)号:US07489160B2

    公开(公告)日:2009-02-10

    申请号:US11812751

    申请日:2007-06-21

    申请人: Koji Kimura

    发明人: Koji Kimura

    IPC分类号: H03K17/16

    摘要: In a semiconductor device capable of adjusting an output impedance of a first output impedance adjustable output buffer of an external semiconductor device connectable to the semiconductor device, a second output impedance adjustable output buffer is provided. A comparator compares a first output voltage of a real load circuit including the first output impedance adjustable output buffer with a second output voltage of a replica load circuit including the second output impedance adjustable output buffer. An output impedance control circuit transmits an output signal of the comparator to the external semiconductor device to adjust the output impedance of the first output impedance adjustable output buffer, so that the first output voltage is made equal to the second output voltage.

    摘要翻译: 在能够调节可连接到半导体器件的外部半导体器件的第一输出阻抗可调输出缓冲器的输出阻抗的半导体器件中,提供第二输出阻抗可调输出缓冲器。 比较器将包括第一输出阻抗可调输出缓冲器的实际负载电路的第一输出电压与包括第二输出阻抗可调输出缓冲器的复制负载电路的第二输出电压进行比较。 输出阻抗控制电路将比较器的输出信号发送到外部半导体器件,以调整第一输出阻抗可调输出缓冲器的输出阻抗,使得第一输出电压等于第二输出电压。

    Piezoelectric/electrostrictive structure and method for manufacturing the same
    9.
    发明授权
    Piezoelectric/electrostrictive structure and method for manufacturing the same 失效
    压电/电致伸缩结构及其制造方法

    公开(公告)号:US07274134B2

    公开(公告)日:2007-09-25

    申请号:US11138250

    申请日:2005-05-26

    IPC分类号: H01L41/083

    摘要: A piezoelectric/electrostrictive structure is provided, including a plurality of stacked sheet-shaped piezoelectric/electrostrictive bodies and at least one sheet of a thin film. The interfaces between the piezoelectric/electrostrictive bodies are exposed at side faces of the piezoelectric/electrostrictive structure, the side faces have notches, and the thin film is placed on the notched portions of side faces. A method for manufacturing the piezoelectric/electrostrictive structure includes the steps of stacking a plurality of ceramic green sheets made of a piezoelectric/electrostrictive material, firing the stacked ceramic green sheets to prepare fired piezoelectric/electrostrictive bodies and forming at least one sheet of a thin film on side faces of the fired piezoelectric/electrostrictive bodies by a chemical vapor deposition process.

    摘要翻译: 提供一种压电/电致伸缩结构,包括多个堆叠的片状压电/电致伸缩体和至少一片薄膜。 压电/电致伸缩体之间的界面在压电/电致伸缩结构的侧面露出,侧面具有凹口,并且薄膜被放置在侧面的切口部分上。 一种制造压电/电致伸缩结构的方法包括以下步骤:堆叠由压电/电致伸缩材料制成的多个陶瓷生片,烧制层叠的陶瓷生片以制备烧制的压电/电致伸缩体并形成至少一片薄的 通过化学气相沉积工艺在烧结的压电/电致伸缩体的侧面上形成薄膜。

    Matrix type piezoelectric/electrostrictive device and manufacturing method thereof
    10.
    发明授权
    Matrix type piezoelectric/electrostrictive device and manufacturing method thereof 失效
    矩阵型压电/电致伸缩器件及其制造方法

    公开(公告)号:US07192799B2

    公开(公告)日:2007-03-20

    申请号:US10834297

    申请日:2004-04-28

    摘要: A method of making a matrix type piezoelectric/electrostrictive device having a plurality of pillar shaped piezoelectric/electrostrictive elements, each having a piezoelectric/electrostrictive substance and at least a pair of electrodes being formed on the sides of the substance, are vertically provided on a thick ceramic substrate, such that the device is driven by displacement of the piezoelectric/electrostrictive substance. In this device, the piezoelectric/electrostrictive elements are integrally bonded to the ceramic substrate and independently arranged in two dimensions. The percentage of transgranularly fractured crystal grains on at least the sides of the piezoelectric/electrostrictive substance on which the electrodes are formed is 10% or less. The unit forms a curved surface near a joined section between the substance and the substrate.

    摘要翻译: 制造具有多个柱状压电/电致伸缩元件的矩阵型压电/电致伸缩元件的方法,每个具有压电/电致伸缩物质和至少一对电极形成在物质的侧面上,垂直地设置在 使得该器件由压电/电致伸缩物质的位移驱动。 在该装置中,压电/电致伸缩元件一体地结合到陶瓷基板上,并且二维地独立地布置。 在形成电极的压电/电致伸缩物质的至少两侧的晶粒间断裂的晶粒的百分比为10%以下。 该单元在物质和基底之间的接合部分附近形成弯曲表面。