摘要:
The thermoplastic polyurethane molding of the present invention is obtained by melting, molding, cooling and solidifying, subsequently heating to a temperature T1 (specifically, 180 to 190° C) that is not more than flow starting temperature Tm and not less than glass transition point Tg and cooling down quickly to a temperature T2 (Tm>T1>T2>Tg, specifically, 160 to 165° C.). In dynamic viscoelasticity measurement, the difference between the temperature at which LogE′ turns 4.5 MPa and the peak temperature of tan δ is 190 to 225° C.
摘要翻译:本发明的热塑性聚氨酯成型体通过熔融,成型,冷却固化,随后加热至不高于流动起始温度Tm且不小于玻璃化转变温度的温度T 1(具体地,180至190℃) 点Tg并快速冷却至温度T 2(Tm> T 1> T 2> Tg,具体地,160至165℃)。 在动态粘弹性测量中,LogE'变为4.5MPa的温度与tanδ的峰值温度之差为190〜225℃。
摘要:
A personal care composition includes a cleansing phase and a benefit phase. The cleansing phase includes a surfactant and the benefit phase includes a benefit agent, where the benefit agent comprises a sucrose polyester with an iodine value of 3 or more.
摘要:
A personal care composition comprising: at least a first phase and a second phase wherein said first phase comprises a) an aqueous structured surfactant phase comprising STnS where n is between about 0 and about 2.5; b) ; c) a structuring system comprising i. optionally, a non-ionic emulsifier; ii. optionally, from about 0.05% to about 5%, by weight of said personal care composition, of an associative polymer; iii. an electrolyte; and said second phase comprises a) a benefit phase comprising from 1% to about 50%, by weight of said personal care composition, of a hydrophobic benefit agent.
摘要:
A personal care composition comprising: at least a first phase and a second phase wherein said first phase comprises a) an aqueous structured surfactant phase comprising STnS where n is between about 0 and about 2.5; b) ; c) a structuring system comprising i. optionally, a non-ionic emulsifier; ii. optionally, from about 0.05% to about 5%, by weight of said personal care composition, of an associative polymer; iii. an electrolyte; and said second phase comprises a) a benefit phase comprising from 1% to about 50%, by weight of said personal care composition, of a hydrophobic benefit agent.
摘要:
A mandrel assembly is provided for insertion into a hollow tube to support the interior walls of the tube during bending of the tube in a tube bending apparatus. The mandrel assembly includes at least one mandrel segment that is adapted for positioning within the tube and has an exterior support surface for supporting the interior walls of the tube during bending. The mandrel segment is anchored at a fixed axial location within the tube by an anchoring device that is radially expandable and retractable between an expanded condition in which an anchor shoe is engaged with the interior wall of the tube and a retracted condition in which the anchor shoe is loose within the tube. A mandrel support rod is attached to the anchoring device for inserting and withdrawing the anchoring device into the tube when the anchor shoe is retracted.
摘要:
The present invention discloses a method of SiGe epitaxy with high germanium concentration, a germanium concentration can be increased by reducing the percentage of silane and germane during introduction silane and germane. With the same flow of germanium source, the germanium concentration is significantly increased as the germane flow is reduced, therefore a defect-free SiGe epitaxial film with a germanium atomic percentage of 25˜35% can be obtained. The present invention can balance epitaxial growth rate and germanium doping concentration by using existing equipments to obtain a high germanium concentration, and the epitaxial growth rate is only reduced a little, which can keep the SiGe epitaxial layer having no defect to meet the requirements of devices and can maintain sufficient throughput.
摘要:
The invention provides a hydroforming apparatus for forming a length of tube. A hydroforming press includes an upper platen and a lower plate. A first die set is provided for forming a first lengthwise portion of the tube and a second die set provided adjacent the first die set which forms a second lengthwise portion of the tube. A first pivot acts between a first and second upper die so that the second upper die can be pivotally adjusted on the upper platen relative to the first upper die. A second pivot acts between a first and second lower die so that the second lower die can be pivotally adjusted on the lower platen relative to the first lower die. A die insert is provided having an upper die insert and a lower die insert that define upper and lower insert cavities that connect together the first and second cavity portions of the upper die set and the lower die set. This die insert is removably mounted as needed to accommodate the pivotal adjustment between the first and second die sets.
摘要:
A mandrel assembly is provided for insertion into a hollow tube to support the interior walls of the tube during bending of the tube in a tube bending apparatus. The mandrel assembly includes at least one mandrel segment that is adapted for positioning within the tube and has an exterior support surface for supporting the interior walls of the tube during bending. The mandrel segment is anchored at a fixed axial location within the tube by an anchoring device that is radially expandable and retractable between an expanded condition in which an anchor shoe is engaged with the interior wall of the tube and a retracted condition in which the anchor shoe is loose within the tube. A mandrel support rod is attached to the anchoring device for inserting and withdrawing the anchoring device into the tube when the anchor shoe is retracted.
摘要:
A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming an epitaxial layer on a top surface of the semiconductor substrate and having a predetermined thickness, and forming a plurality of trenches in the epitaxial layer. The trenches are formed in the epitaxial layer and have a predetermined depth, top width, and bottom width. Further, the method includes performing a first trench filling process to form a semiconductor layer inside of the trenches using a mixture gas containing at least silicon source gas and halogenoid gas, stopping the first trench filling process when at least one trench is not completely filled, and performing a second trench filling process, different from the first trench filling process, to fill the plurality of trenches completely.
摘要:
The invention provides a hydroforming apparatus for forming a length of tube. A hydroforming press includes an upper platen and a lower plate. A first die set is provided for forming a first lengthwise portion of the tube and a second die set provided adjacent the first die set which forms a second lengthwise portion of the tube. A first pivot acts between a first and second upper die so that the second upper die can be pivotally adjusted on the upper platen relative to the first upper die. A second pivot acts between a first and second lower die so that the second lower die can be pivotally adjusted on the lower platen relative to the first lower die. A die insert is provided having an upper die insert and a lower die insert that define upper and lower insert cavities that connect together the first and second cavity portions of the upper die set and the lower die set. This die insert is removably mounted as needed to accommodate the pivotal adjustment between the first and second die sets.