公开(公告)号：US5104479A

公开(公告)日：1992-04-14

申请号：US605351

申请日：1990-10-30

申请人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

发明人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

IPC分类号： G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/0758

摘要： A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.

公开(公告)号：US5403699A

公开(公告)日：1995-04-04

申请号：US100343

申请日：1993-08-02

申请人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

发明人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

IPC分类号： G03F7/039 ,  G03F7/32

CPC分类号： G03F7/039 ,  G03F7/325 ,  Y10S430/143

摘要： A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.

摘要翻译： 使用式（I）的正性抗蚀剂材料的图案形成方法：其中R 1和R 2可以相同或不同，并且各自表示取代或未取代的低级烷基，X表示 卤素原子，m和n分别大于0且小于100; 并用二甲苯进行10至20分钟的选择性曝光的抗蚀剂材料的显影，或与其它溶剂一起进行。 该方法有效地获得具有增加的灵敏度和优异的分辨率的精细抗蚀剂图案，而不会降低抗蚀剂的未曝光区域中的层厚度，并且抗蚀剂图案在其曝光区域中抵抗残留物。

公开(公告)号：US5066751A

公开(公告)日：1991-11-19

申请号：US468083

申请日：1990-01-22

申请人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

发明人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

IPC分类号： G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/0758

摘要： A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.

公开(公告)号：US5087551A

公开(公告)日：1992-02-11

申请号：US487089

申请日：1990-03-02

申请人： Yuko Nakamura ,  Satoshi Takechi

发明人： Yuko Nakamura ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/311 ,  H01L21/312

CPC分类号： H01L21/31144 ,  G03F7/0048 ,  G03F7/039 ,  H01L21/312

摘要： A process for the preparation of a semiconductor device and a pattern-forming coating solution used for this process are disclosed. In this process, a coating solution formed by dissolving an .alpha.-methylstyrene/methyl .alpha.-chloroacrylate copolymer as a specific positive resist material in a specific solvent is coated on a layer to be etched, which is formed on a semiconductor substrate. In this process, penetration between the substrate and the resist of the resist into the clayer to be etched, and a formation of cracks in the resist after the etching, are prevented.

摘要翻译： 公开了一种制备用于该方法的半导体器件和图案形成涂层溶液的方法。 在该方法中，将通过将α-甲基苯乙烯/α-丙烯酸甲酯α-甲基丙烯酸甲酯共​​聚物作为特定正性抗蚀剂材料溶解在特定溶剂中形成的涂布溶液涂覆在形成于半导体基板上的被蚀刻层上。 在此过程中，防止了将基板和抗蚀剂的抗蚀剂渗入待蚀刻的层中，并且防止蚀刻后在抗蚀剂中形成裂纹。

公开(公告)号：US5068169A

公开(公告)日：1991-11-26

申请号：US426755

申请日：1989-10-26

申请人： Satoshi Takechi ,  Yuko Nakamura ,  Yukari Mihara

发明人： Satoshi Takechi ,  Yuko Nakamura ,  Yukari Mihara

IPC分类号： G03F7/039 ,  G03F7/075 ,  G03F7/26 ,  G03F7/36 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G03F7/0758 ,  Y10S438/949

摘要： Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.

公开(公告)号：US5019485A

公开(公告)日：1991-05-28

申请号：US420427

申请日：1989-10-12

申请人： Yuko Nakamura ,  Satoshi Takechi

发明人： Yuko Nakamura ,  Satoshi Takechi

IPC分类号： G03F7/11 ,  C09K3/16 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16

CPC分类号： G03F7/0045 ,  G03F7/093

摘要： Electrically conductive layer-providing compositions comprising a conducting or semiconducting polymer and/or a non-conducting precursor thereof and a photo-acid generator having a sensitivity to an ultraviolet radiation having a wavelength of 300 nm or less. The electrically conductive layer, when an electron beam resist layer adjacent thereto is exposed to a pattern of the electron beam, can effectively prevent an accumulation of an electrical charge on the resist layer and accordingly a misalignment of the resist pattern. In addition, the compositions and electrically conductive layer resulting therefrom can be stably stored if not exposed to ultraviolet radiation. Pattern formation processes using the electrically conductive layer-providing compositions are also provided.

公开(公告)号：US20110207944A1

公开(公告)日：2011-08-25

申请号：US13126128

申请日：2009-11-02

申请人： Yuko Nakamura ,  Hiroshi Saito ,  Kazuo Nagasawa ,  Atsushi Kittaka

发明人： Yuko Nakamura ,  Hiroshi Saito ,  Kazuo Nagasawa ,  Atsushi Kittaka

IPC分类号： C07D207/26

CPC分类号： C07D207/273

摘要： Compound represented by formula (1) or a pharmaceutically acceptable solvate thereof, useful for treating or preventing Paget's disease of bone, hypercalcaemia, osteoporosis or asthma. (1) R1 represents a C1-C6 alkyl group or C7-C15 aralkyl group (the aromatic ring of which can be substituted by a C1-C6 alkyl group, C1-C6 alkoxy group, a hydroxyl group, a halogenatom or a trifluoromethyl group), R2 represents a C1-C6 alkyl group, and R3 represents a C1-C6 alkyl or alkoxy group, which can be substituted with a hydroxyl group.

摘要翻译： 由式（1）表示的化合物或其药学上可接受的溶剂化物，可用于治疗或预防佩吉特氏骨，高钙血症，骨质疏松症或哮喘。 （1）R1表示C1-C6烷基或C7-C15芳烷基（其芳香环可被C1-C6烷基，C1-C6烷氧基，羟基，卤原子或三氟甲基取代） ），R2表示C1-C6烷基，R3表示可被羟基取代的C1-C6烷基或烷氧基。

公开(公告)号：USRE34698E

公开(公告)日：1994-08-16

申请号：US10786

申请日：1993-01-29

申请人： Yukio Miyazaki ,  Akira Shibata ,  Tateo Yahagi ,  Masayuki Hara ,  Kaoru Hara ,  Singo Yoneda ,  Hiroko Kasahara ,  Yuko Nakamura

发明人： Yukio Miyazaki ,  Akira Shibata ,  Tateo Yahagi ,  Masayuki Hara ,  Kaoru Hara ,  Singo Yoneda ,  Hiroko Kasahara ,  Yuko Nakamura

IPC分类号： C07D493/20 ,  C07H19/01 ,  C12P17/18 ,  C12N1/20 ,  C12N1/38

CPC分类号： C07H19/01 ,  C07D493/20 ,  C12P17/181

摘要： Polyether type antibiotics are produced by culturing a polyether type antibiotic-producing microorganism is a medium containing a fatty acid or its precursor and ammonia or an ammonium salt or urea.

摘要翻译： 聚醚型抗生素通过培养聚醚型抗生素产生微生物是含有脂肪酸或其前体和氨或铵盐或尿素的培养基来生产。

公开(公告)号：US20070082024A1

公开(公告)日：2007-04-12

申请号：US10577135

申请日：2004-10-20

申请人： Hitoshi Matsumoto ,  Yuko Nakamura ,  Megumi Yamagishi ,  Kyoto Ito

发明人： Hitoshi Matsumoto ,  Yuko Nakamura ,  Megumi Yamagishi ,  Kyoto Ito

IPC分类号： A61K31/7048 ,  A61K31/353 ,  A61K8/73

CPC分类号： C07H17/065 ,  A23L33/105 ,  A61K8/97 ,  A61K31/7048 ,  A61K2800/782 ,  A61Q19/02

摘要： A tyrosinase activity inhibitor and an ameliorant for facial blood flow that are excellent in terms of safety, and medicinal compositions, food compositions, and cosmetic preparations that contain the inhibitor and the ameliorant as active ingredients are provided. A tyrosinase activity inhibitor and an ameliorant for facial blood flow that contain anthocyan obtained by concentration or extraction of plant material, and medicinal compositions, food compositions, and cosmetic preparations that have an inhibitory action on tyrosinase activity and ameliorating action on facial blood flow are provided.

摘要翻译： 提供了一种酪氨酸酶活性抑制剂和安全性优异的面部血流量改善剂，以及含有抑制剂和改善剂作为活性成分的药物组合物，食品组合物和化妆品制剂。 提供了含有通过浓缩或提取植物材料获得的花青的面部血液流出物的酪氨酸酶活性抑制剂和改善剂，以及对酪氨酸酶活性具有抑制作用并改善对面部血流的作用的药物组合物，食品组合物和化妆品制剂。 。

公开(公告)号：US20060105911A1

公开(公告)日：2006-05-18

申请号：US10526245

申请日：2003-09-22

申请人： Yuko Nakamura ,  Takeshi Kudo ,  Azuma Ruike ,  Fumie Kawanami ,  Norio Nashirozawa ,  Yuji Iwasaki ,  Ken Kuzuhori ,  Satoshi Tegueamori

发明人： Yuko Nakamura ,  Takeshi Kudo ,  Azuma Ruike ,  Fumie Kawanami ,  Norio Nashirozawa ,  Yuji Iwasaki ,  Ken Kuzuhori ,  Satoshi Tegueamori

IPC分类号： B01J21/06

CPC分类号： B01J21/063 ,  B01J35/004 ,  B01J37/0238 ,  B01J37/345 ,  C03C17/007 ,  C03C17/23 ,  C03C17/2456 ,  C03C17/256 ,  C03C2217/42 ,  C03C2217/71

摘要： A process for producing a photocatalyst material, the photocatalyst material exhibiting highly active photocatalytic action and capable of reducing special odor generated at the time of ultraviolet irradiation. This process comprises the raw photocatalyst material preparation step (P1) of obtaining a photocatalyst material (raw photocatalyst material) being in the state of not bearing any base metal on its surface and the base metal superimposition step (P3) of causing the raw photocatalyst material obtained in the step P1 to bear base metal fine particles on its surface to thereby obtain the photocatalyst material bearing a base metal. The base metal superimposition step P3 comprises the solution treatment step (P31) of dipping the raw photocatalyst material in a base metal compound solution according to photoprecipitation, the ultraviolet irradiation step (P32) of irradiating the base metal bearing photocatalyst material obtained in the step P31 with ultraviolet light and the drying step (P33) of drying the photocatalyst material resulting from the step P32.

摘要翻译： 一种光催化剂材料的制造方法，该光催化剂材料具有高活性的光催化作用，能够降低紫外线照射时产生的特殊气味。 该方法包括获得在其表面上不具有任何贱金属的状态的光催化剂材料（原料光催化剂材料）的原料光催化剂材料制备步骤（P 1）和使原料 在步骤P1中获得的光催化剂材料在其表面上承载贱金属微粒，从而获得承载贱金属的光催化剂材料。 贱金属叠加工序P 3包括将光催化剂原料浸渍在贱金属化合物溶液中的固溶处理工序（P31），照射光照射紫外线照射工序（P32） 步骤P31和由步骤P32产生的光催化剂材料的干燥步骤（P 33）。