公开(公告)号：US08334091B2

公开(公告)日：2012-12-18

申请号：US12213820

申请日：2008-06-25

申请人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： G03F7/00

CPC分类号： H01L27/11526 ,  G03F7/0048 ,  G03F7/095 ,  G03F7/40 ,  H01L21/31138 ,  H01L27/105 ,  H01L27/11543

摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

摘要翻译： 为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含 树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

公开(公告)号：US07189783B2

公开(公告)日：2007-03-13

申请号：US10305258

申请日：2002-11-27

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  C03F1/00

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

公开(公告)号：US06794113B2

公开(公告)日：2004-09-21

申请号：US10291671

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03F7004

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

摘要翻译： 负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元 其能够与碱溶性基团反应，和（2）光致酸产生剂，当通过图像形成辐射的吸收分解时，能够产生可引起第二单体的醇结构之间的反应的酸 单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。 抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。

公开(公告)号：US20080274431A1

公开(公告)日：2008-11-06

申请号：US12213820

申请日：2008-06-25

申请人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： G03F7/20

CPC分类号： H01L27/11526 ,  G03F7/0048 ,  G03F7/095 ,  G03F7/40 ,  H01L21/31138 ,  H01L27/105 ,  H01L27/11543

摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

摘要翻译： 为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含 树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

公开(公告)号：US06773867B2

公开(公告)日：2004-08-10

申请号：US10291723

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03C500

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

公开(公告)号：US06465137B2

公开(公告)日：2002-10-15

申请号：US09288781

申请日：1999-04-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

IPC分类号： G03F900

CPC分类号： G03F7/004 ,  G03F7/0045

摘要： A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.

摘要翻译： 抗蚀剂组合物，在抗蚀剂中含有熔点为160℃以上的添加剂，不含芳香环，分子大小不大于且可溶于抗蚀剂的显影液中 相对于100重量份的抗蚀剂的固体重量为1-50重量份，以及使用它的图案形成方法。 从而可以获得高分辨率抗蚀剂图案。

公开(公告)号：US08349542B2

公开(公告)日：2013-01-08

申请号：US12783244

申请日：2010-05-19

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： G03F7/26

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

公开(公告)号：US07744768B2

公开(公告)日：2010-06-29

申请号：US11643896

申请日：2006-12-22

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  C03F1/00

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 用于制造半导体器件的工艺在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以增厚，并通过蚀刻将图案图案化为掩模。

公开(公告)号：US20070106021A1

公开(公告)日：2007-05-10

申请号：US11643896

申请日：2006-12-22

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： C08F8/00

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

公开(公告)号：US06506534B1

公开(公告)日：2003-01-14

申请号：US09654433

申请日：2000-09-01

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03C1492

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of imaage-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

摘要翻译： 负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元 其能够与碱溶性基团反应，和（2）光产酸剂，当通过吸收成形辐射分解时，能够产生可引起第二单体的醇结构之间的反应的酸 单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。 抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。