公开(公告)号：US08269908B2

公开(公告)日：2012-09-18

申请号：US12335806

申请日：2008-12-16

申请人： Koji Oda ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

发明人： Koji Oda ,  Naoki Nakagawa ,  Takeshi Ono ,  Yusuke Uchida

IPC分类号： G02F1/136

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

摘要翻译： 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。

公开(公告)号：US20110198606A1

公开(公告)日：2011-08-18

申请号：US13010281

申请日：2011-01-20

申请人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

发明人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/04

摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

摘要翻译： 本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧 在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

公开(公告)号：US08487309B2

公开(公告)日：2013-07-16

申请号：US13010281

申请日：2011-01-20

申请人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

发明人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/04

摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

摘要翻译： 本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧 在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

公开(公告)号：US08405091B2

公开(公告)日：2013-03-26

申请号：US12523550

申请日：2008-02-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

IPC分类号： H01L27/14

CPC分类号： G02F1/13439 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136295 ,  G02F2201/40 ,  G02F2202/06 ,  H01L27/124 ,  H01L29/458

摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

摘要翻译： 显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。 金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成 或铝合金，并形成在中间杂质含有层上。 在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

公开(公告)号：US20100078816A1

公开(公告)日：2010-04-01

申请号：US12523550

申请日：2008-02-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

IPC分类号： H01L23/532 ,  H01L21/283

CPC分类号： G02F1/13439 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136295 ,  G02F2201/40 ,  G02F2202/06 ,  H01L27/124 ,  H01L29/458

摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

摘要翻译： 显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。 金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成 或铝合金，并形成在中间杂质含有层上。 在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

公开(公告)号：US20130051027A1

公开(公告)日：2013-02-28

申请号：US13592985

申请日：2012-08-23

申请人： Masashi Okamoto ,  Koji Oda ,  Shinichiro Kanaoka ,  Motonori Tada ,  Koichi Kamei

发明人： Masashi Okamoto ,  Koji Oda ,  Shinichiro Kanaoka ,  Motonori Tada ,  Koichi Kamei

IPC分类号： F21V29/00 ,  F21V8/00

CPC分类号： H04N1/0083 ,  H04N1/00989 ,  H04N1/02835

摘要： A linear light source includes an LED, an LED drive circuit substrate disposed on a frame, a flexible substrate on which an electric supply pattern is formed and to which the LED is attached at one end and the LED drive circuit is attached at the other end, a linear light guide and a heat sink. The one end of the flexible substrate is attached to the heat sink. A face of the heat sink covered by the LED and a face of the one end of the flexible substrate are perpendicular to the light guide and to a substrate face of the LED drive circuit substrate, while a face of the other end of the flexible substrate is parallel to the light guide and a substrate face of the LED drive circuit substrate. A bent portion is formed between the two ends of the flexible substrate.

摘要翻译： 线性光源包括LED，设置在框架上的LED驱动电路基板，形成电源图案的柔性基板，并且在一端连接LED并且LED驱动电路在另一端附接 线性导光板和散热片。 柔性基板的一端安装在散热片上。 由LED覆盖的散热器的表面和柔性基板的一端的表面垂直于光导和LED驱动电路基板的基板面，而柔性基板的另一端的表面 平行于光导和LED驱动电路基板的基板面。 弯曲部分形成在柔性基板的两端之间。

公开(公告)号：US20060125414A1

公开(公告)日：2006-06-15

申请号：US11299902

申请日：2005-12-13

申请人： Koji Oda ,  Takahiro Hiraoka

发明人： Koji Oda ,  Takahiro Hiraoka

IPC分类号： H05B41/16

CPC分类号： H05B41/2856 ,  H05B41/2813 ,  H05B41/382 ,  Y02B20/22

摘要： The lamp lighting circuit prevents a malfunction in which a lamp is tuned on momentarily during an initial stage of the power input. When the power source is lit, the malfunction prevention circuit prevents the activation of the oscillation circuit and/or the driving circuit 3a until when the output control circuit 5 starts normal operation and outputs the output control signal that controls the lighting/non-lighting of the lamp. When a lamp lighting command is input to the output control circuit, the output of the oscillation circuit is transmitted to the power control element via a driving circuit, and the power control element is driven. Consequently a voltage is generated on the secondary side coil of a boosting transformer so that the lamp 1 is lit.

摘要翻译： 灯电源电路防止在电源输入的初始阶段瞬间调节灯的故障。 当电源点亮时，故障防止电路防止振荡电路和/或驱动电路3a的激活，直到输出控制电路5开始正常操作，并输出控制照明/非照明的输出控制信号 的灯。 当灯输入命令被输入到输出控制电路时，振荡电路的输出经由驱动电路被发送到功率控制元件，驱动功率控制元件。 因此，在升压变压器的次级侧线圈上产生电压，使得灯1点亮。

公开(公告)号：US5605904A

公开(公告)日：1997-02-25

申请号：US449273

申请日：1995-05-24

申请人： Kenji Tsujihara ,  Naoyuki Harada ,  Kunihiko Ozaki ,  Motoaki Ohashi ,  Koji Oda

发明人： Kenji Tsujihara ,  Naoyuki Harada ,  Kunihiko Ozaki ,  Motoaki Ohashi ,  Koji Oda

IPC分类号： C07D471/04 ,  A61K31/435

CPC分类号： C07D471/04

摘要： An ellipticine derivative of the formula [I]: ##STR1## wherein R is a substituted lower alkyl group, a substituted or unsubstituted lower alkoxy group or a heteromonocyclic group, or a pharmaceutically acceptable salt thereof, which show excellent antitumor activity, less side effects, less toxicity and/or high solubility in water and are useful as antitumor agent, and a process for preparing the same.

摘要翻译： 式[I]的玫瑰树碱衍生物：其中R是取代的低级烷基，取代或未取代的低级烷氧基或杂单环基或其药学上可接受的盐，其显示出优异的抗肿瘤活性， 较少的副作用，较少的毒性和/或在水中的高溶解性，并且可用作抗肿瘤剂，及其制备方法。

公开(公告)号：US07329999B2

公开(公告)日：2008-02-12

申请号：US11299902

申请日：2005-12-13

申请人： Koji Oda ,  Takahiro Hiraoka

发明人： Koji Oda ,  Takahiro Hiraoka

IPC分类号： G05F1/00 ,  H05B37/00

CPC分类号： H05B41/2856 ,  H05B41/2813 ,  H05B41/382 ,  Y02B20/22

摘要： The lamp lighting circuit prevents a malfunction in which a lamp is tuned on momentarily during an initial stage of the power input. When the power source is lit, the malfunction prevention circuit prevents the activation of the oscillation circuit and/or the driving circuit 3a until when the output control circuit 5 starts normal operation and outputs the output control signal that controls the lighting/non-lighting of the lamp. When a lamp lighting command is input to the output control circuit, the output of the oscillation circuit is transmitted to the power control element via a driving circuit, and the power control element is driven. Consequently a voltage is generated on the secondary side coil of a boosting transformer so that the lamp 1 is lit.

摘要翻译： 灯电源电路防止在电源输入的初始阶段瞬间调节灯的故障。 当电源点亮时，故障防止电路防止振荡电路和/或驱动电路3a的激活，直到输出控制电路5开始正常操作，并输出控制照明/非照明的输出控制信号 的灯。 当灯输入命令被输入到输出控制电路时，振荡电路的输出经由驱动电路被发送到功率控制元件，驱动功率控制元件。 因此，在升压变压器的次级侧线圈上产生电压，使得灯1点亮。

公开(公告)号：US20060081992A1

公开(公告)日：2006-04-20

申请号：US11291994

申请日：2005-12-02

申请人： Seiji Okura ,  Koji Oda ,  Mahito Sawada

发明人： Seiji Okura ,  Koji Oda ,  Mahito Sawada

IPC分类号： H01L23/52

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P-SiO film, P-SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.