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1.发明申请MAGNETORESISTIVE EFFECT HEAD HAVING A MULTILAYERED PINNED LAYER OR FREE LAYER AND SYSTEMS THEREOF 有权具有多层拼接层或其自由层及其系统的磁阻效应头公开(公告)号：US20110134563A1
公开(公告)日：2011-06-09
申请号：US12955767
申请日：2010-11-29
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.
摘要翻译： 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。
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2.发明授权Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof 有权具有多层被钉扎层和/或具有无定形和结晶层的自由层的磁阻效应头及其系统公开(公告)号：US08514527B2
公开(公告)日：2013-08-20
申请号：US12955767
申请日：2010-11-29
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.
摘要翻译： 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。
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公开(公告)号：US08570691B2
公开(公告)日：2013-10-29
申请号：US13082098
申请日：2011-04-07
申请人： Masashige Sato , Kojiro Komagaki
发明人： Masashige Sato , Kojiro Komagaki
CPC分类号： G11B5/3909
摘要： In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.
摘要翻译： 在一个实施例中，隧道磁阻（TMR）头包括衬底上的引线层，引线层上的晶种层，种子层上方的反铁磁（AFM）层，AFM层上方的第一铁磁层，第二铁磁 在所述第一铁磁层之上的层，在所述第一和第二铁磁层之间的耦合层，所述耦合层引起所述第二铁磁层的磁化耦合到所述第一铁磁层的磁化，所述第二铁磁层上方的固定层， 与固定层或固定层相邻的插入层，固定层上方的阻挡层，阻挡层上方的自由层以及自由层上方的覆盖层。 在另一个实施例中，插入层的厚度为约0.05nm至0.3nm，并且包括Ta，Ti，Hf和/或Zr，并且自由层包括CoFeB。
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4.发明申请公开(公告)号：US20120257298A1
公开(公告)日：2012-10-11
申请号：US13082098
申请日：2011-04-07
申请人： Masashige Sato , Kojiro Komagaki
发明人： Masashige Sato , Kojiro Komagaki
CPC分类号： G11B5/3909
摘要： In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.
摘要翻译： 在一个实施例中，隧道磁阻（TMR）头包括衬底上的引线层，引线层上的晶种层，种子层上方的反铁磁（AFM）层，AFM层上方的第一铁磁层，第二铁磁 在所述第一铁磁层之上的层，在所述第一和第二铁磁层之间的耦合层，所述耦合层引起所述第二铁磁层的磁化耦合到所述第一铁磁层的磁化，所述第二铁磁层上方的固定层， 与固定层或固定层相邻的插入层，固定层上方的阻挡层，阻挡层上方的自由层以及自由层上方的覆盖层。 在另一个实施例中，插入层的厚度为约0.05nm至0.3nm，并且包括Ta，Ti，Hf和/或Zr，并且自由层包括CoFeB。
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公开(公告)号：US20100053824A1
公开(公告)日：2010-03-04
申请号：US12548990
申请日：2009-08-27
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254
摘要： A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.
摘要翻译： 磁阻元件包括：由铁磁材料制成的自由层，所述自由层被配置为在外部磁场的影响下改变磁化方向; 覆盖在自由层上的绝缘层，由绝缘材料制成的绝缘层; 覆盖在所述绝缘层上的非晶参考层，由铁磁材料制成的所述非晶参考层，所述非晶参考层被配置为沿预定方向固定所述磁化; 覆盖在非晶参考层上的晶体层，含有晶粒的晶体层; 覆盖在所述晶体层上的非磁性层，所述非磁性层含有从所述晶体层中的晶粒生长的晶粒; 以及覆盖在所述非磁性层上的被钉扎层，所述被钉扎层被配置为沿预定方向固定所述磁化。
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公开(公告)号：US20090244790A1
公开(公告)日：2009-10-01
申请号：US12409330
申请日：2009-03-23
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： An magnetoresistive element includes: an underlayer made of a nitride; a pinning layer made of an antiferromagnetic layer overlaid on the underlayer, the pinning layer having the close-packed surface in the (111) surface of crystal, the pinning layer setting the (002) surface of crystal in parallel with the surface of the underlayer; a reference layer overlaid on the pinning layer, the reference layer having the magnetization fixed in a predetermined direction based on the exchange coupling with the pinning layer; a nonmagnetic layer overlaid on the reference layer, the nonmagnetic layer made of a nonmagnetic material; and a free layer overlaid on the nonmagnetic layer, the free layer made of a ferromagnetic material, the free layer enabling a change in the direction of the magnetization under the influence of an external magnetic field.
摘要翻译： 磁阻元件包括：由氮化物制成的底层; 由覆盖在底层上的反铁磁层制成的钉扎层，该钉扎层在晶体的（111）表面具有紧密堆积的表面，钉扎层将晶体的（002）表面与底层的表面平行设置 ; 覆盖在钉扎层上的参考层，基于与钉扎层的交换耦合，具有沿预定方向固定的磁化的参考层; 覆盖在参考层上的非磁性层，由非磁性材料制成的非磁性层; 以及覆盖在非磁性层上的自由层，由铁磁材料制成的自由层，该自由层能够在外部磁场的影响下使磁化方向发生变化。
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7.发明申请FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开铁磁结构元件，磁记录装置和磁记忆装置公开(公告)号：US20090097170A1
公开(公告)日：2009-04-16
申请号：US12202789
申请日：2008-09-02
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L27/228 , H01L43/10
摘要： A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer.
摘要翻译： 铁磁隧道结元件是磁阻效应元件，其中电阻根据施加的磁场而变化。 铁磁隧道结元件包括其中保持至少一部分磁化方向的钉扎层和形成在被钉扎层上的绝缘层，产生电子可以通过隧道效应流过的能量势垒。 在绝缘层上形成由含硼原子的第一铁磁材料制成的第一自由层。 在第一自由层中，磁化方向在外部磁场的影响下切换。 在第一自由层上形成由含有硼原子的第一铁磁材料制成的第二自由层。 第二自由层的磁化方向在外部磁场的影响下切换，与第一自由层交换耦合。
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8.发明授权Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device 失效铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置公开(公告)号：US07466526B2
公开(公告)日：2008-12-16
申请号：US11257397
申请日：2005-10-25
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
摘要翻译： 公开了铁磁隧道结。 铁磁隧道结包括钉扎磁性层，形成在钉扎磁性层上的隧道绝缘膜，以及形成在隧道绝缘膜上的自由磁性多层体。 自由磁性多层体包括在隧道绝缘膜上依次堆叠的第一自由磁性层，扩散阻挡层和第二自由磁性层。 第一自由磁性层和第二自由磁性层彼此铁磁耦合。 扩散阻挡层抑制包含在第一自由磁性层中的添加元素扩散到第二自由磁性层中。
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9.发明申请Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 审中-公开隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器公开(公告)号：US20080112093A1
公开(公告)日：2008-05-15
申请号：US11899486
申请日：2007-09-06
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译： 阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。 第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。 第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。 提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。
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公开(公告)号：US20080070063A1
公开(公告)日：2008-03-20
申请号：US11898730
申请日：2007-09-14
申请人： Takahiro Ibusuki , Masashige Sato
发明人： Takahiro Ibusuki , Masashige Sato
CPC分类号： G11B5/66 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/11 , Y10T428/1107
摘要： An exchange coupling film of the present invention has a sandwich structure with a non-magnetic layer of a Ru—Rh alloy between two ferromagnetic layers. In a case of applying the exchange coupling film of the present invention to a magnetic head (reading element), the non-magnetic layer is set to have, for example, a thickness of 0.4 nm to 0.5 nm, and a Rh content of 5 at % to 40 at %. In a case of applying the exchange coupling film of the present invention to a magnetic recording medium, the non-magnetic layer is set to have, for example, a thickness of 0.4 nm to 0.6 nm, and a Rh content of 5 at % to 70 at %. In a case of applying the exchange coupling film of the present invention to an MRAM, the non-magnetic layer is set to have, for example, a thickness of 0.3 nm to 0.7 nm, and a Rh content of 5 at % to 40 at %.
摘要翻译： 本发明的交换耦合膜具有在两个铁磁层之间具有Ru-Rh合金的非磁性层的夹层结构。 在将本发明的交换耦合膜施加到磁头（读取元件）的情况下，非磁性层被设定为具有例如0.4nm〜0.5nm的厚度，并且Rh含量为5 以％至40at％。 在将本发明的交换耦合膜施加到磁记录介质的情况下，非磁性层的厚度例如为0.4nm〜0.6nm，Rh含量为5原子％〜 70原子％。 在将本发明的交换耦合膜施加于MRAM的情况下，非磁性层的厚度例如为0.3nm〜0.7nm，Rh含量为5at％〜40at ％。
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