摘要:
An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
摘要:
Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.
摘要:
Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
摘要:
A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
摘要:
Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.
摘要:
A composition for preparing an organic insulating film. The composition includes a functional group-containing monomer, an initiator generating an acid or a radical upon light irradiation or heating, and a linear polymer. Further, an organic insulating film prepared from the composition. Since the organic insulating film has a crosslinked structure, it exhibits solvent resistance in subsequent processes. Further, when the organic insulating film is used to fabricate a transistor, it can improve the electrical properties of the transistor.
摘要:
An organic-inorganic metal hybrid material and a composition for producing an organic insulator comprising the hybrid material. The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material has a high dielectric constant and a high degree of crosslinking. Based on these advantages, the hybrid material or the composition can be applied to the fabrication of various electronic devices by a wet process.
摘要:
A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic insulating film, and etching a portion of the organic insulating film remaining on the electrode. Since a pattern of an organic insulating film can be formed by simple molding without the use of a photoresist, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
摘要:
A gamma correction device for use in a display device includes a gamma voltage controller to generate a digital gamma signal in a unit of a predetermined interval, and a gamma voltage generator to generate an analog gamma voltage corresponding to the digital gamma signal.
摘要:
A plasma display panel includes an upper plate having a sustain electrode, a lower plate having an address electrode, and a partition formed between the upper plate and the lower plate and having an inorganic ion exchanger. The yellow discoloration of the partition is prevented to improve color brightness and light permeability.