Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units
    1.
    发明申请
    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
    含有低聚噻吩和n型杂芳族单元的有机半导体共聚物

    公开(公告)号:US20060006379A1

    公开(公告)日:2006-01-12

    申请号:US11073691

    申请日:2005-03-08

    IPC分类号: H01L29/08 C08G75/00

    摘要: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    摘要翻译: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件,例如作为沟道层。

    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same
    2.
    发明申请
    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
    有机绝缘体组合物,具有该有机绝缘体组合物的有机绝缘膜,具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法

    公开(公告)号:US20070129473A1

    公开(公告)日:2007-06-07

    申请号:US11481843

    申请日:2006-07-07

    IPC分类号: C04B41/50 B60C1/00

    摘要: Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.

    摘要翻译: 本发明的实施例涉及有机绝缘体组合物,具有有机绝缘体组合物的有机绝缘膜,具有有机绝缘膜的有机薄膜晶体管,具有有机薄膜晶体管的电子器件及其形成方法。 本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。 提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。 可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质,例如阈值电压和/或电荷载流子迁移率。 有机薄膜晶体管可以有效地用于制造包括液晶显示器(LCD)和/或光伏器件的各种电子器件。

    Method for fabricating organic thin film transistor
    3.
    发明申请
    Method for fabricating organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号:US20060128083A1

    公开(公告)日:2006-06-15

    申请号:US11123120

    申请日:2005-05-06

    IPC分类号: H01L21/8234

    摘要: Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

    摘要翻译: 本文公开了一种制造有机薄膜晶体管的方法,其包括在基板上依次形成的栅电极,栅极绝缘膜,源极/漏极和有机半导体层,其中栅极绝缘膜的表面上的源极/ 形成漏电极用无机酸或有机酸浸渍,然后进行退火。 根据该方法,可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。 此外,可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

    Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same
    4.
    发明申请
    Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same 失效
    用于形成有机绝缘膜的组合物和使用其形成有机绝缘膜的图案的方法

    公开(公告)号:US20060006380A1

    公开(公告)日:2006-01-12

    申请号:US11156489

    申请日:2005-06-21

    IPC分类号: H01L29/08

    摘要: A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

    摘要翻译: 一种用于形成有机绝缘膜的光可图案组合物,其包含(i)含官能团的单体,(ii)在光照射时产生酸或自由基的引发剂,和(iii)有机或无机聚合物。 还公开了使用该组合物形成有机绝缘膜的图案的方法。 由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺,所以整个工艺被简化,并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

    Composition for preparing organic insulating film and organic insulating film prepared from the same
    6.
    发明申请
    Composition for preparing organic insulating film and organic insulating film prepared from the same 审中-公开
    用于制备有机绝缘膜和由其制备的有机绝缘膜的组合物

    公开(公告)号:US20050279995A1

    公开(公告)日:2005-12-22

    申请号:US11007352

    申请日:2004-12-09

    IPC分类号: H01L29/08 H01L51/05

    摘要: A composition for preparing an organic insulating film. The composition includes a functional group-containing monomer, an initiator generating an acid or a radical upon light irradiation or heating, and a linear polymer. Further, an organic insulating film prepared from the composition. Since the organic insulating film has a crosslinked structure, it exhibits solvent resistance in subsequent processes. Further, when the organic insulating film is used to fabricate a transistor, it can improve the electrical properties of the transistor.

    摘要翻译: 一种制备有机绝缘膜的组合物。 该组合物包含含官能团的单体,在光照射或加热时产生酸或自由基的引发剂和线性聚合物。 此外,由组合物制备的有机绝缘膜。 由于有机绝缘膜具有交联结构,因此在随后的工艺中具有耐溶剂性。 此外,当有机绝缘膜用于制造晶体管时,其可以改善晶体管的电性能。

    Method for forming pattern of organic insulating film
    8.
    发明申请
    Method for forming pattern of organic insulating film 有权
    形成有机绝缘膜图案的方法

    公开(公告)号:US20060115998A1

    公开(公告)日:2006-06-01

    申请号:US11195694

    申请日:2005-08-03

    IPC分类号: H01L21/31

    摘要: A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic insulating film, and etching a portion of the organic insulating film remaining on the electrode. Since a pattern of an organic insulating film can be formed by simple molding without the use of a photoresist, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

    摘要翻译: 一种通过在基板上形成电极形成有机绝缘膜的图案的方法,在其上涂覆可压印组合物以形成有机绝缘膜,使用图案化模具加压和固化有机绝缘膜,以将模具的图案转移到 有机绝缘膜,并蚀刻残留在电极上的有机绝缘膜的一部分。 由于可以通过简单的模制而不使用光致抗蚀剂来形成有机绝缘膜的图案,因此简化了整个过程,并且最终可以通过所有湿法制造具有高载流子迁移率的有机薄膜晶体管。

    Gamma correction device, gamma correction method thereof, and liquid crystal display device using the same
    9.
    发明申请
    Gamma correction device, gamma correction method thereof, and liquid crystal display device using the same 有权
    伽马校正装置,伽马校正方法和使用其的液晶显示装置

    公开(公告)号:US20070001977A1

    公开(公告)日:2007-01-04

    申请号:US11318644

    申请日:2005-12-28

    申请人: Jung Shin

    发明人: Jung Shin

    IPC分类号: G09G3/36

    CPC分类号: G09G3/3688 G09G2320/0276

    摘要: A gamma correction device for use in a display device includes a gamma voltage controller to generate a digital gamma signal in a unit of a predetermined interval, and a gamma voltage generator to generate an analog gamma voltage corresponding to the digital gamma signal.

    摘要翻译: 用于显示装置的伽马校正装置包括以预定间隔单位产生数字伽马信号的伽马电压控制器,以及用于产生对应于数字伽马信号的模拟伽马电压的伽玛电压发生器。

    PLASMA DISPLAY PANEL, METHOD OF MANUFACTURING THE SAME, AND COMPOSITION OF PARTITIONS THEREOF
    10.
    发明申请
    PLASMA DISPLAY PANEL, METHOD OF MANUFACTURING THE SAME, AND COMPOSITION OF PARTITIONS THEREOF 审中-公开
    等离子体显示面板,其制造方法及其组成

    公开(公告)号:US20060244379A1

    公开(公告)日:2006-11-02

    申请号:US11380588

    申请日:2006-04-27

    申请人: Jung Shin

    发明人: Jung Shin

    IPC分类号: H01J17/49

    摘要: A plasma display panel includes an upper plate having a sustain electrode, a lower plate having an address electrode, and a partition formed between the upper plate and the lower plate and having an inorganic ion exchanger. The yellow discoloration of the partition is prevented to improve color brightness and light permeability.

    摘要翻译: 等离子体显示面板包括具有维持电极的上板,具有寻址电极的下板和形成在上板和下板之间并具有无机离子交换器的隔板。 防止了隔板的黄色变色,提高了颜色亮度和透光性。