公开(公告)号：US20190276736A1

公开(公告)日：2019-09-12

申请号：US16293641

申请日：2019-03-06

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won-Kook CHOI ,  Hong Hee KIM ,  Yeonju LEE

IPC: C09K11/65 ,  C09K11/54

Abstract: Disclosed is a zinc oxide-based quantum dot aggregate capable of emitting white light is a mixture of a zinc oxide quantum dot and a zinc oxide-graphene quantum dot, in which the zinc oxide quantum dot emits yellow light when being irradiated with an excitation wavelength shorter than a wavelength corresponding to an energy band gap of the zinc oxide quantum dot, the zinc oxide-graphene quantum dot is in a form in which a zinc oxide quantum dot is bound with graphene via a Zn—O—C bond and emits blue-based light, and white light emission is possible through color rendering of yellow light emission by the zinc oxide quantum dot and blue-based light emission by the zinc oxide-graphene quantum dot.

公开(公告)号：US20150368110A1

公开(公告)日：2015-12-24

申请号：US14744230

申请日：2015-06-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-Kap LEE ,  Yeseul PARK ,  Won-Kook CHOI

IPC: C01B31/04

CPC classification number: C01B32/186

Abstract: The present disclosure relates to a method of growing a graphene nanopowder having a size of 10 nm or less into a graphene sheet having a seed size or more by using a graphene nanopowder as a seed. Further, in the present disclosure, a graphite sheet in which 2 to 20 layers of the graphene sheet are laminated may be prepared. The carbon sheet (that is, graphene and graphite sheets) may be prepared by preparing a graphene nanopowder (randomly distributed) on a substrate, and then subjecting the substrate to CVD treatment using a gas including a hydrocarbon gas in a chemical deposition apparatus.

Abstract translation: 本公开涉及通过使用石墨烯纳米粉末作为种子将具有10nm或更小尺寸的石墨烯纳米粉末生长成具有种子大小或更大的石墨烯片的方法。 此外，在本公开中，可以制备层压有2〜20层的石墨烯片的石墨片。 碳片（即，石墨烯和石墨片）可以通过在基板上制备石墨烯纳米粉末（随机分布），然后在化学沉积装置中使用包含烃气体的气体进行CVD处理来制备。

公开(公告)号：US20160225479A1

公开(公告)日：2016-08-04

申请号：US15014937

申请日：2016-02-03

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won CHOI ,  Won-Kook CHOI ,  Jin Sang KIM ,  Haena YIM

IPC: H01B1/02 ,  C01G45/00 ,  H01L33/42 ,  H01L29/43 ,  H01L31/0224

CPC classification number: H01B1/02 ,  C01G19/02 ,  C01P2002/50 ,  C01P2002/54 ,  H01L29/43 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  Y02E10/50

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0

Abstract translation: 公开了一种具有优化组成的锰锡氧化物基透明导电氧化物（TCO），其即使在室温下沉积时也具有低的表面粗糙度，低的薄层电阻和高透射率，使用其的多层透明导电膜和 制作相同。 锰氧化锡系透明导电氧化物具有Mn x Sn 1-x O（0

公开(公告)号：US20160013411A1

公开(公告)日：2016-01-14

申请号：US14512154

申请日：2014-10-10

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jung Ah LIM ,  Yong-Won SONG ,  Su Jin LEE ,  Won-Kook CHOI

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0004 ,  H01L51/0005 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0566

Abstract: Provided are a method of manufacturing multi-layered thin films, multi-layered thin films formed by the same, a method of manufacturing an organic thin film transistor including the same, and an organic thin film transistor manufactured by the same. The method of manufacturing multi-layered thin films includes: preparing a substrate; printing a blend solution including an organic semiconductor, an insulating polymer, and a solvent on the substrate; and simultaneously forming an insulating polymer thin film and an organic semiconductor thin film on the insulating polymer thin film by using a vertical phase separation phenomenon of the organic semiconductor and the insulating polymer, in which according to contents of the organic semiconductor and the insulating polymer in the blend solution and a printing speed of the blend solution, a width of the organic semiconductor thin film, and a thickness of the insulating polymer thin film are controlled.

Abstract translation: 提供一种制造多层薄膜的方法，由其形成的多层薄膜，包括该多层薄膜的有机薄膜晶体管的制造方法和由其制造的有机薄膜晶体管。 制造多层薄膜的方法包括：制备基材; 在基板上印刷包括有机半导体，绝缘聚合物和溶剂的共混溶液; 并且通过使用有机半导体和绝缘聚合物的垂直相分离现象，在绝缘聚合物薄膜上同时形成绝缘聚合物薄膜和有机半导体薄膜，其中根据有机半导体和绝缘聚合物的含量 控制混合溶液和共混溶液的印刷速度，有机半导体薄膜的宽度和绝缘聚合物薄膜的厚度。

公开(公告)号：US20230363194A1

公开(公告)日：2023-11-09

申请号：US18311454

申请日：2023-05-03

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won-Kook CHOI ,  Hong Hee KIM ,  Yong-Won SONG ,  Soohyung PARK

IPC: H10K50/115 ,  H10K85/30

CPC classification number: H10K50/115 ,  H10K85/381 ,  B82Y20/00

Abstract: Disclosed is a light emitting diode using zinc oxide-aminopyrene core-shell quantum dots capable of improving the purity of blue light emission and securing long lifetime through the characteristic that emission transition of electrons proceeds in aminopyrene by applying the zinc oxide-aminopyrene quantum dots forming a core-shell structure with zinc oxide(ZnO) and 1-aminopyrene to the light emitting diode. The light emitting diode using the zinc oxide-aminopyrene core-shell quantum dots comprises a bule light-emitting layer of the ZnO@1-aminopyrene quantum dots having a core-shell structure in which ZnO quantum dots form a core, and 1-aminopyrene forms a shell.

公开(公告)号：US20230099482A1

公开(公告)日：2023-03-30

申请号：US17951178

申请日：2022-09-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won-Kook CHOI ,  Keun Yong LIM

IPC: H01L51/44

Abstract: Disclosed are a flexible transparent electrode structure, a method for preparing the same, and an organic optoelectronic device using the same. The flexible transparent electrode structure includes: a flexible substrate; a thin film laminate of a triple-layer structure formed on both sides of the flexible substrate; and a transparent electrode formed on the thin film laminate of a triple-layer structure provided on one side of the flexible substrate, wherein the thin film laminate of a triple-layer structure includes a SiNx thin film, a SiOxNy thin film and a SiOx thin film formed sequentially on the flexible substrate. The flexible transparent electrode structure has superior light transmittance, water permeation resistance and oxygen permeation resistance, which can improve the electrical properties of an organic optoelectronic device.

公开(公告)号：US20150380499A9

公开(公告)日：2015-12-31

申请号：US13659226

申请日：2012-10-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei OH ,  Chil-Hyoung LEE ,  Won-Kook CHOI ,  Jeon-Kook LEE ,  Young-Soo NO

IPC: H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/20

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2  [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.

Abstract translation: p型透明氧化物半导体包括以下化学式1所示的氧化锡化合物：Sn1-xMxO2 [化学式1]其中，在化学式1中，M为三价金属，X为0.01的实数 ~0.05。 由于优异的电气和光学性质，p型透明氧化物半导体可应用于诸如TFT-LCD和透明太阳能电池的有源半导体器件，并且在可见光透射率（T），载流子迁移率（μ）和 整改率以及透明度。

公开(公告)号：US20150072482A1

公开(公告)日：2015-03-12

申请号：US14259674

申请日：2014-04-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jung Ah LIM ,  Yong-Won SONG ,  Jae-Min HONG ,  Won-Kook CHOI ,  Dae Seong EOM

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/1606 ,  C01B32/184 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/0692 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684

Abstract: A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.

Abstract translation: 提供一种制造薄膜晶体管的方法，包括制备包括其中分散有氧化石墨烯，氧化还原石墨烯或其组合的溶液的油墨，以图案的形式在基材上形成油墨，以及 通过使用氧化石墨烯，还原型氧化石墨烯或它们的组合，在油墨中形成定位在图案边缘处的源电极和漏电极以及通过咖啡环效应位于电极之间的半导体通道 形成图案。