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1.发明申请公开(公告)号：US20190072516A1
公开(公告)日：2019-03-07
申请号：US15939721
申请日：2018-03-29
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Young In JHON , Young Tae BYUN , Yong Tae Kim , Young Min JHON
IPC: G01N27/414 , H01L29/66 , H01L29/78 , H01L27/088 , H01L21/8234
CPC classification number: G01N27/4146 , G01N27/414 , G01N27/4145 , H01L21/823462 , H01L27/0886 , H01L27/1203 , H01L29/66795 , H01L29/785
Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.
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公开(公告)号：US20230194953A1
公开(公告)日：2023-06-22
申请号：US17956337
申请日：2022-09-29
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kayoung KIM , Chulki KIM , Jae Hun KIM , Taikjin LEE , Sang Wook HAN , Seungwoo JEON , Yu Kyeong KIM , Young Tae BYUN
CPC classification number: G02F1/3551 , G02F1/3501 , G02F1/3615
Abstract: One aspect of the present disclosure is a method for selective surface functionalization using a single-photon source. The method for selective functionalization using a single-photon source includes: (a) adding a single-photon source to a solution containing a photosensitizer and a monomer; and (b) emitting a single photon from the single-photon source. One aspect of the present disclosure is a selectively functionalized single-photon source prepared by the method.
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公开(公告)号：US20170082574A1
公开(公告)日：2017-03-23
申请号：US15254322
申请日：2016-09-01
Applicant: Korea Institute of Science and Technology
Inventor： Young Tae BYUN , Jae Seong KIM , Je Haeng LEE , Sun Ho KIM , Young Min JHON , Sun Woo CHOI
CPC classification number: H01L51/0026 , B22F1/025 , B22F7/04 , B22F2007/042 , B22F2301/25 , B22F2302/403 , B22F2304/054 , B22F2998/10 , B22F2999/00 , B82Y30/00 , B82Y40/00 , C23C14/185 , C23C14/5806 , G01N27/12 , H01L51/0003 , H01L51/0048 , H01L51/0096 , B22F3/10 , B22F9/026 , B22F2003/248 , B22F1/0018 , C22C2026/002 , B22F2201/11
Abstract: A gas sensor and a method of fabricating the same are provided. The gas sensor includes a substrate, carbon nanotubes (CNTs) adsorbed onto the substrate, platinum nanoparticles (NPs) decorated to surfaces of the CNTs, and an electrode formed on the substrate onto which the CNTs with the platinum NPs decorated thereto are adsorbed. When the platinum NPs and CNTs are used as a sensing material, the gas sensor can be useful in sensing gases with high sensitivity even when present at a low concentration of at least 2 ppm and stably sensing noxious gases such as C6H6, C7H8, C3H6O, CO, NO, and NH3 as well as NO2, and can have particularly excellent selectivity and response characteristics with respect to NO2 gas.
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4.发明申请APPARATUS FOR GENERATING EXTREME ULTRA-VIOLET BEAM USING MULTI-GAS CELL MODULES 有权用于生成使用多气体细胞模块的极端超紫外线束的装置公开(公告)号：US20160192467A1
公开(公告)日：2016-06-30
申请号：US14979729
申请日：2015-12-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Young Min JHON , Yong Soo KIM , Joon Mo AHN , Min Ah SEO , Jae Hun KIM , Min Chul PARK , Young Tae BYUN , Chul Ki KIM , Seok LEE , Deok Ha Woo
IPC: H05G2/00
Abstract: Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.
Abstract translation: 提供了一种使用多气体单元模块的极紫外（EUV）光束产生装置，其中通过将用作缓冲室的辅助气室添加到主气体池中，防止气体直接流入真空室， 气体的扩散速率降低，维持高真空状态，连续生成高功率EUV光束。
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Patent Agency Ranking
公开(公告)号：US20180259472A1
公开(公告)日：2018-09-13
申请号：US15704183
申请日：2017-09-14
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Young Tae BYUN , Sun-woo CHOI , Dong Jin LEE
CPC classification number: C08K3/041 , C08K3/16 , G01N27/127
Abstract: A sensing material for gas sensors including carbon nanotubes in which lanthanum fluoride (LaF3) nanoparticles are fixed, a method of fabricating the sensing material, a gas sensor including the sensing material, and a method of fabricating the gas sensor are provided. The gas sensor having an excellent response and excellent selectivity to F2 gas without any electrolytes may be provided using the sensing material. Also, the gas sensor can be useful in measuring a concentration of the F2 gas and minimizing power consumption because the gas sensor may be operated at room temperature without using a heater, and can be used for portable purposes because it is possible to miniaturize the gas sensor.
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公开(公告)号：US20150346029A1
公开(公告)日：2015-12-03
申请号：US14490948
申请日：2014-09-19
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Sun Ho KIM , Yong Soo KIM , Jae Hun KIM , Min-Chul PARK , Young Tae BYUN , Min Ah SEO , Joon Mo AHN , Deok Ha WOO , Seok LEE , Taik Jin LEE , Young Min JHON
CPC classification number: G01J3/0297 , G01J3/10 , G01J3/28 , G01J3/2803 , G01J2003/282
Abstract: Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.
Abstract translation: 本文公开了用于极紫外（EUV）分光仪校准的装置和方法。 用于EUV分光仪校准的装置包括EUV生成模块，Al滤光片，衍射光栅，CCD照相机，光谱转换模块和控制模块，该模块将与频谱峰值中的最大峰值对应的波长值与 根据高次谐波的顺序，从频谱转换模块转换成具有预定参考波长值的EUV光的顺序，以计算具有最接近参考波长值的差值，并根据EUV的顺序来控制光谱 从光谱转换模块转换为沿波长轴方向移动计算出的差值的光。 因此，可以精确地测量在EUV曝光技术和掩模检查技术中使用的EUV光的光谱的波长。
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7.发明申请METHOD FOR FORMING PN JUNCTION IN GRAPHENE WITH APPLICATION OF DNA AND PN JUNCTION STRUCTURE FORMED USING THE SAME 有权使用DNA形成PN结的方法和使用其形成的PN结结构公开(公告)号：US20150243917A1
公开(公告)日：2015-08-27
申请号：US14282026
申请日：2014-05-20
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Chulki KIM , Yeong Jun KIM , Young Mo JUNG , Seong Chan JUN , Taikjin LEE , Seok LEE , Young Tae BYUN , Deok Ha WOO , Sun Ho KIM , Min Ah SEO , Jae Hun KIM , Jong Chang YI
CPC classification number: H01L51/0558 , C01B32/194 , H01L51/0012 , H01L51/002 , H01L51/0045 , H01L51/0093 , H01L51/0562 , H01L51/0583 , H01L51/107
Abstract: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
Abstract translation: 用于在石墨烯中形成PN结的方法包括：形成石墨烯层，并在石墨烯层的部分区域上形成DNA分子层，所述DNA分子层具有设计成为石墨烯层提供预定掺杂物的核苷酸序列结构 在石墨烯层上吸附时的性质。 DNA分子具有设计用于掺杂石墨烯的核苷酸序列结构，使得掺杂的石墨烯具有特定的半导体性质。 通过微图案化将DNA分子涂覆在其部分区域被暴露的石墨烯层的表面上，由此可以通过涂覆有DNA分子的区域和在其中的非涂覆区域形成各种结构的PN结 石墨烯层。
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公开(公告)号：US20150049775A1
公开(公告)日：2015-02-19
申请号：US14448227
申请日：2014-07-31
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Young Min JHON , Joon Mo AHN , Jae Hun KIM , Seok LEE , Min Chul PARK , Deok Ha WOO , Young Tae BYUN , Taik Jin LEE , Sun Ho KIM
IPC: H01S3/117
CPC classification number: H01S3/117 , H01S3/08027 , H01S3/1062 , H01S3/1068 , H01S3/11 , H01S3/1103 , H01S3/1106 , H01S3/1109 , H01S3/1112 , H01S3/1623
Abstract: Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.
Abstract translation: 提供了一种用于产生激光的脉冲激光装置。 该装置包括：第一反射镜和第二反射镜，其设置在谐振器的两端并被配置为反射激光;增益介质，设置在第一和第二反射镜之间并且被配置为放大并输出从外部入射的光， 标准准则被配置为调整激光的脉冲宽度，以及声光调制器，其布置在第一和第二反射镜之间并被配置为从激光形成锁模和Q开关信号，其中一些激光 通过第一或第二反射镜输出到谐振器外部。
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9.发明申请FABRICATING METHOD OF CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR AND CARBON NANOTUBE-BASED FIELD EFFECT TRANSISTOR FABRICATED THEREBY 有权基于碳纳米管的场效应晶体管的制备方法和基于碳纳米管的场效应晶体管的制备方法公开(公告)号：US20140367632A1
公开(公告)日：2014-12-18
申请号：US14048197
申请日：2013-10-08
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Young Tae BYUN , Sun Ho KIM , Young Min JHON , Eun Gyeong KIM , Jae Seong KIM , Deok Ha WOO
CPC classification number: H01L51/0003 , H01L51/0026 , H01L51/0048 , H01L51/0508 , H01L51/0545 , Y10S977/742
Abstract: There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.
Abstract translation: 提供了一种通过制造方法制造的具有与衬底和基于碳纳米管的场效应晶体管的结合力提高的基于碳纳米管的场效应晶体管的制造方法。 该方法包括在基板上形成氧化膜，在氧化膜上形成光致抗蚀剂图案，在具有光致抗蚀剂图案的氧化膜的整个表面上形成金属膜，通过剥离除去光致抗蚀剂，在基板上吸附碳纳米管 从中除去光致抗蚀剂，对吸附有碳纳米管的基板进行退火处理，并除去金属膜。 由于衬底和碳纳米管之间的粘合强度增加，所以可以提高场效应晶体管的稳定性和可靠性。 如果将场效应晶体管施加到液体传感器等，则可以延长传感器的寿命，并且可以提高由传感器获得的测量结果的可靠性。
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