摘要:
A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “α”, “β” and “γ”, respectively, they satisfy relations of 1.2≦(α/β)≦5.0 and 0.5≦(β/γ)≦10.0.
摘要:
A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “α”, “β” and “γ”, respectively, the “α”, “β” and “γ” satisfy relations of 2.5≦(α/β)≦5.0 and 1.0≦(β/γ)≦10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.
摘要:
A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “α”, “β” and “γ”, respectively, the “α”, “β” and “γ” satisfy relations of 2.5≦(α/β)≦5.0 and 1.0≦(β/γ)≦10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.
摘要:
A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “α”, “β” and “γ”, respectively, they satisfy relations of 1.2≦(α/β)≦5.0 and 0.5≦(β/γ)≦10.0.
摘要:
A dielectric ceramic composition comprises, a main component including barium titanate, a first subcomponent including MgO, a second subcomponent including sintering aids of SiO2 compound, a third subcomponent including at least one of V2O5, Nb2O5 and WO3, a fourth A subcomponent including RA oxide (note that, RA is at least one selected from Tb, Gd and Dy), a fourth B subcomponent including R oxide (note that, R is at least one selected from Ho, Y and Yb), and a fifth subcomponent including MnO or Cr2O3.
摘要:
A dielectric ceramic composition comprises, a main component including barium titanate, a first subcomponent including MgO, a second subcomponent including sintering aids of SiO2 compound, a third subcomponent including at least one of V2O5, Nb2O5 and WO3, a fourth A subcomponent including RA oxide (note that, RA is at least one selected from Tb, Gd and Dy), a fourth B subcomponent including RB oxide (note that, RB is at least one selected from Ho, Y and Yb), and a fifth subcomponent including MnO or Cr2O3.
摘要:
A zinc-oxide-based conductive stacked structure 1 includes a substrate 11 and, formed on at least one surface of the substrate, an undercoat layer 12 and a transparent conductive film 13. The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×1020 to 9.8×1020 cm−3. The zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward.
摘要:
A method for manufacturing a liquid discharging head, the method including forming a plurality of nozzles that discharge liquid droplets, forming a plurality of piezoelectric elements that generate pressure for discharging liquid droplets from the respective nozzles; and performing a repolarization process on the piezoelectric elements to set non-uniformity of the droplet discharging characteristics of the nozzles to be in a predetermined range by combining adjustment of a polarization sensitivity and adjustment of a polarization voltage for each of the piezoelectric elements.
摘要:
A semiconductor device that can suppress variation of GND potential of a control board and prevent malfunction of IC without restricting a mounting direction of the IC of the control board is provided. In a power module 10 as a semiconductor device in which an insulating board 31 having a power switching element 24 and a control board 22 having IC 50 for controlling the power switching element 24 are vertically provided in a case body 19, GND pins 61 are provided at both the sides of the IC 50, a GND pattern 51 to which the GND pins 61 of the IC 50 are connected is provided in the control board 22, and a GND loop breaking slit 70 as a breaking portion for breaking a GND loop formed by electrical connection of the IC 50, the GND pins 61 at both the sides of the IC 50 and the GND pattern 51 is provided to the GND pattern 51.
摘要:
To provide a magnetic field control apparatus capable of reducing a width of a correcting plate. The magnetic field control apparatus includes a conductive vacuum duct 1 disposed between dipole magnet magnetic poles 3 and a conductive correcting plate 2. The correcting plate 2 is formed of a material having an electric conductivity higher than that of the vacuum duct 1. A plurality of conductive correcting plates 2 are disposed in each of four areas, the four areas being formed by dividing a cross section of a vacuum duct 1 extending perpendicularly to a direction in which a charged particle beam travels by a symmetrical surface having each of both magnetic poles of the dipole magnet defined as a mirror image and a plane which extends perpendicularly to the symmetrical surface and through which a center of gravity of the charged particle beam passes.