公开(公告)号：US08478180B2

公开(公告)日：2013-07-02

申请号：US12956522

申请日：2010-11-30

申请人： Kota Arimoto ,  Ryo Suzuki

发明人： Kota Arimoto ,  Ryo Suzuki

IPC分类号： G03G15/20 ,  H05B11/00

CPC分类号： G03G15/2053 ,  G03G15/2039 ,  G03G2215/2035

摘要： An image heating apparatus includes a belt including a heat generating layer for generating heat by energization and including a power receiving portion which has electroconductivity and is electrically connected to the heat generating layer; a stationary back-up member, provided inside the belt, for sliding on an inner peripheral surface of the belt; a pressing member for pressing the belt against the back-up member to form a nip in which a recording material is to be nip-conveyed between the belt and itself; and an electroconductive portion, provided on the back-up member, for supplying electric power to the power receiving portion by being electrically connected to the power receiving portion.

摘要翻译： 图像加热装置包括：带，其包括通过通电而产生热的发热层，并且包括具有导电性并与发热层电连接的受电部; 固定的支撑构件，设置在所述带内部，用于在所述带的内周面上滑动; 压紧构件，用于将带压靠在支撑构件上，以形成记录材料在带和本身之间被夹持传送的辊隙; 以及设置在所述支撑构件上的导电部分，用于通过电连接到所述受电部分来向所述受电部分提供电力。

公开(公告)号：US20110129267A1

公开(公告)日：2011-06-02

申请号：US12956522

申请日：2010-11-30

申请人： Kota Arimoto ,  Ryo Suzuki

发明人： Kota Arimoto ,  Ryo Suzuki

IPC分类号： G03G15/20

CPC分类号： G03G15/2053 ,  G03G15/2039 ,  G03G2215/2035

摘要： An image heating apparatus includes a belt including a heat generating layer for generating heat by energization and including a power receiving portion which has electroconductivity and is electrically connected to the heat generating layer; a stationary back-up member, provided inside the belt, for sliding on an inner peripheral surface of the belt; a pressing member for pressing the belt against the back-up member to form a nip in which a recording material is to be nip-conveyed between the belt and itself; and an electroconductive portion, provided on the back-up member, for supplying electric power to the power receiving portion by being electrically connected to the power receiving portion.

摘要翻译： 图像加热装置包括：带，其包括通过通电而产生热的发热层，并且包括具有导电性并与发热层电连接的受电部; 固定的支撑构件，设置在所述带内部，用于在所述带的内周面上滑动; 压紧构件，用于将带压靠在支撑构件上，以形成记录材料在带和本身之间被夹持传送的辊隙; 以及设置在所述支撑构件上的导电部分，用于通过电连接到所述受电部分来向所述受电部分提供电力。

公开(公告)号：US08987737B2

公开(公告)日：2015-03-24

申请号：US14003388

申请日：2012-03-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： H01L29/04 ,  C01B33/037 ,  C30B28/06 ,  C30B29/06 ,  H01L31/18 ,  C30B11/00 ,  H01L21/02

CPC分类号： H01L29/04 ,  C01B33/037 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

摘要翻译： 提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm， 由一件组成。 本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

公开(公告)号：US20140194353A1

公开(公告)日：2014-07-10

申请号：US13990523

申请日：2011-11-29

申请人： C. Ronald Kahn ,  Ryo Suzuki

发明人： C. Ronald Kahn ,  Ryo Suzuki

IPC分类号： A61K38/28 ,  G01N33/53

CPC分类号： A61K38/28 ,  G01N33/53

摘要： Compositions and methods for treating neural dysfunction. A exemplary method comprises administering to a subject having a neuropathy, e.g., a cognitive dysfunction or Alzheimer's, a therapeutically effective amount of an insulin or insulin analog, wherein the insulin or insulin analog crosses the BBB and/or a compound that increases SREBP-2 expression or activity in the CNS of the subject.

摘要翻译： 治疗神经功能障碍的组合物和方法。 一种示例性方法包括对具有神经病，例如认知功能障碍或阿尔茨海默病的受试者施用治疗有效量的胰岛素或胰岛素类似物，其中胰岛素或胰岛素类似物穿过BBB和/或增加SREBP-2的化合物 表达或活动在CNS的主题。

公开(公告)号：US08512868B2

公开(公告)日：2013-08-20

申请号：US13499304

申请日：2010-10-28

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： B32B9/04 ,  B32B13/04 ,  C01B33/02

CPC分类号： C30B29/06 ,  C30B11/00 ,  C30B28/06 ,  C30B33/06

摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.

摘要翻译： 具有以下结构的硅晶片的混合硅晶片，其中通过单向凝固/熔融法制备的多晶硅的主平面取向为（311），单晶硅嵌入多晶硅中。 7.根据权利要求1〜6中任一项所述的复合硅晶片，其特征在于，除了气体成分以外的多晶硅部分的纯度为6N以上，金属杂质的总量为1重量ppm以下，在金属杂质中，Cu ，Fe，Ni，Al分别为0.1重量ppm以下。 因此，提供了具有多晶硅晶片和单晶硅晶片的功能的混合硅晶片，并且防止了多晶硅和单晶硅之间的抛光凸起和宏观尺寸的不均匀性的出现。

公开(公告)号：US20130196820A1

公开(公告)日：2013-08-01

申请号：US13818004

申请日：2010-08-20

申请人： Ryo Suzuki ,  Akiyoshi Negishi ,  Shinichi Takeuchi ,  Takeshi Kaino ,  Katsuya Kobayashi

发明人： Ryo Suzuki ,  Akiyoshi Negishi ,  Shinichi Takeuchi ,  Takeshi Kaino ,  Katsuya Kobayashi

IPC分类号： B60W10/02 ,  B60W10/06

CPC分类号： B60W10/02 ,  B60W10/06 ,  F02D29/02 ,  F02D41/022 ,  F02D41/123 ,  F02D2200/101 ,  F02D2200/602 ,  Y10T477/79

摘要： A vehicle engine control device stopping fuel injection if a predetermined fuel cut condition is satisfied, is provided, during running with the fuel injection stopped, when inertia of a power transmission system rotating with the engine has a smaller rate of inertia of the power transmission system acting on rotation of an output shaft of the engine, the fuel injection being started at a lower engine rotation speed as compared to the case of a larger rate of inertia of the power transmission system acting on rotation of the output shaft of the engine, a clutch capable of connecting and interrupting power transmission between the engine and the power transmission system being interposed between the engine and the power transmission system, a rate of inertia of the power transmission system acting on rotation of the output shaft of the engine being configured to decrease as a clutch stroke of the clutch that is an operation amount of a clutch pedal increases, and an engine rotation speed for starting the fuel injection being set to a lower value as the clutch stroke increases.

摘要翻译： 在满足规定的燃料切断条件的情况下，设置停止燃料喷射的车辆发动机控制装置，在停止燃料的行驶中，当与发动机一起旋转的动力传递系统的惯性具有较小的动力传递系统的惯量 作用于发动机的输出轴的旋转，与作为发动机的输出轴的旋转的动力传递系统的较大惯量的情况相比，燃料喷射以较低的发动机转速开始， 能够连接和中断发动机和动力传递系统之间的动力传递的离合器插入在发动机和动力传动系统之间，作用在发动机的输出轴的旋转上的动力传动系统的惯性率被配置为减小 作为离合器的作为离合器踏板的操作量的离合器行程增加，并且发动机旋转 d随着离合器行程的增加而将燃油喷射设定为较低的值。

公开(公告)号：US08118984B2

公开(公告)日：2012-02-21

申请号：US12279067

申请日：2007-02-22

申请人： Ryo Suzuki

发明人： Ryo Suzuki

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/3414 ,  C22C1/0466 ,  C22C5/04 ,  C22C27/00 ,  C22C27/02 ,  C22C27/04 ,  C22C30/00

摘要： Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than the matrix-forming major component, improve the deposition quality as well as the workability of the target by reducing impurities such as gas components, enhancing the density and eliminating the generation of arcing and particles in sputtering. This sintered sputtering target of refractory metals is composed of one or more types of minor components selected from W, Ta and Hf at less than 50 at % as well as at least one or more major components selected from Ru, Rh and Ir and inevitable impurities as the remainder. The metal structure of the major component comprises a granular minor component metal phase, or an alloy phase or a compound phase of the major and the minor component having an average grain size of 100 μm to 500 μm.

摘要翻译： 提出的是含有两种以上难熔金属的烧结溅射靶。 特别地，提出了一种难熔金属的烧结溅射靶，其能够改善目标结构以防止除基体形成主要成分之外的金属颗粒的脱落，通过减少来提高沉积质量以及靶的可加工性 诸如气体组分的杂质，增强了密度并消除了溅射中电弧和颗粒的产生。 难熔金属的烧结溅射靶由小于50at％的选自W，Ta和Hf的一种或多种次要组分以及选自Ru，Rh和Ir中的至少一种或多种主要成分和不可避免的杂质构成 作为剩余部分。 主要成分的金属组织包括平均粒径为100μm〜500μm的粒状次成分金属相或主成分和次要成分的合金相或化合物相。

公开(公告)号：US20120009374A1

公开(公告)日：2012-01-12

申请号：US12832150

申请日：2010-07-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： B32B3/02 ,  B29D7/00 ,  C01B33/02

CPC分类号： C30B33/06 ,  C01B32/05 ,  C30B11/00 ,  C30B29/06 ,  Y10T428/21

摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

摘要翻译： 提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体 晶体部分。 另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭 硅和多晶硅，并从其中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

公开(公告)号：US20110315016A1

公开(公告)日：2011-12-29

申请号：US13255078

申请日：2009-03-16

申请人： Kuninori Furuyama ,  Masahiro Miya ,  Ryo Suzuki

发明人： Kuninori Furuyama ,  Masahiro Miya ,  Ryo Suzuki

IPC分类号： B01D53/02

CPC分类号： B01D53/08 ,  B01D53/508 ,  B01D53/565 ,  B01D53/83 ,  B01D2251/2062 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2257/302 ,  B01D2257/404 ,  B01D2259/4009 ,  B01D2259/401 ,  B01D2259/402

摘要： An exhaust-gas treating apparatus, which includes an adsorption tower for removing various harmful substances in an exhaust gas using an adsorbent, a regeneration tower for releasing adsorbed substances from the adsorbent, a first transfer passage for transferring the adsorbent from the adsorption tower to the regeneration tower, a second transfer passage for transferring the adsorbent from the regeneration tower to the adsorption tower, a lock hopper connected to one end of the regeneration tower on a higher differential pressure side of a first differential pressure between an inside of the regeneration tower and an inside of the first transfer passage and a second differential pressure between the inside of the regeneration tower and an inside of the second transfer passage to thereby secure gas-tightness, a sealing unit connected to the other end of the regeneration tower on a lower differential pressure side to thereby secure gas-tightness, and an adjusting unit for maintaining the differential pressure in the sealing unit within a fixed range.

摘要翻译： 一种废气处理装置，其包括使用吸附剂除去废气中的各种有害物质的吸附塔，用于从吸附剂中排出吸附物质的再生塔，将吸附剂从吸附塔转移到第一输送通道 再生塔，用于将吸附剂从再生塔转移到吸附塔的第二输送通道，在再生塔的内部与再生塔的内部之间的第一差压的较高压差侧连接到再生塔的一端的闭锁料斗 第一输送通道的内部和再生塔的内部与第二输送通道的内部之间的第二差压，从而确保气密性;密封单元，连接到再生塔的另一端，位于下部差速器 从而确保气密性，以及用于保持气密性的调节单元 密封单元中的压差在一定范围内。

公开(公告)号：US08062440B2

公开(公告)日：2011-11-22

申请号：US12204069

申请日：2008-09-04

申请人： Takeo Okabe ,  Shuichi Irumata ,  Yasuhiro Yamakoshi ,  Hirohito Miyashita ,  Ryo Suzuki

发明人： Takeo Okabe ,  Shuichi Irumata ,  Yasuhiro Yamakoshi ,  Hirohito Miyashita ,  Ryo Suzuki

IPC分类号： C23C1/18 ,  C23C14/00

CPC分类号： C22C27/00 ,  C23C14/3414 ,  H01L21/31645 ,  Y10S148/158

摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

摘要翻译： 在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。