Polishing body
    1.
    发明申请
    Polishing body 失效
    抛光体

    公开(公告)号:US20060075686A1

    公开(公告)日:2006-04-13

    申请号:US11288094

    申请日:2005-11-29

    IPC分类号: B24B7/30 B24D18/00

    摘要: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

    摘要翻译: 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散液,通过涂布干燥该水性分散体 薄膜穿过薄膜,并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。

    Polishing body
    3.
    发明授权
    Polishing body 失效
    抛光体

    公开(公告)号:US07201641B2

    公开(公告)日:2007-04-10

    申请号:US11288086

    申请日:2005-11-29

    IPC分类号: B24B1/00

    摘要: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

    摘要翻译: 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散液,通过涂布干燥该水性分散体 薄膜穿过薄膜,并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。

    Polishing body
    4.
    发明申请

    公开(公告)号:US20060116054A1

    公开(公告)日:2006-06-01

    申请号:US11288086

    申请日:2005-11-29

    IPC分类号: B24B7/30

    摘要: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

    Abrasive material
    5.
    发明授权
    Abrasive material 失效
    磨料

    公开(公告)号:US07001252B2

    公开(公告)日:2006-02-21

    申请号:US10030141

    申请日:2001-05-29

    IPC分类号: B24B7/22

    摘要: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

    摘要翻译: 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下,得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散体,通过涂布干燥该水性分散体 薄膜穿过薄膜,模压所得干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。

    Polishing method
    7.
    发明授权
    Polishing method 失效
    抛光方法

    公开(公告)号:US06777335B2

    公开(公告)日:2004-08-17

    申请号:US09995613

    申请日:2001-11-29

    申请人: Kou Hasegawa

    发明人: Kou Hasegawa

    IPC分类号: H01K21302

    CPC分类号: B24D3/34 B24B37/24

    摘要: It is an object of the present invention to provide a polishing method, with which a surface of high flatness can be obtained without fail at a high removal rate and in a stable manner. The polishing method is to polish a surface to be polished of an object to be polished by using a polishing pad while existing an aqueous chemical mechanical polishing solution containing an oxidizing agent such as hydrogen peroxide between polishing surface of the polishing pad equipped with a polishing part that contains abrasive, and the surface to be polished to be polished of the object to be polished. The aqueous chemical mechanical polishing solution may be contained a heterocyclic compound, a multivalent metal ion, an organic acid and the like. Also, the aqueous chemical mechanical solution may be contained no abrasive.

    摘要翻译: 本发明的目的是提供一种抛光方法,其以高的去除率和稳定的方式可以获得高平坦度的表面。 抛光方法是通过使用抛光垫来抛光待抛光物体的待抛光表面,同时在抛光垫的抛光表面上装有含有氧化剂如过氧化氢的水性化学机械抛光溶液, 其中含有研磨剂,待抛光的表面被抛光的被抛物体。 水性化学机械研磨液可以含有杂环化合物,多价金属离子,有机酸等。 此外,水性化学机械溶液可以不含磨料。

    POLISHING PAD AND PRODUCTION METHOD THEREOF
    8.
    发明申请
    POLISHING PAD AND PRODUCTION METHOD THEREOF 有权
    抛光垫及其生产方法

    公开(公告)号:US20080313967A1

    公开(公告)日:2008-12-25

    申请号:US12197643

    申请日:2008-08-25

    IPC分类号: C08J5/14

    CPC分类号: B24D18/00 B24B37/24 B24D3/342

    摘要: There are provided a polishing pad which exhibits excellent polishing stability and excellent slurry retainability during polishing and even after dressing, can prevent a reduction in polishing rate effectively and is also excellent in an ability to flatten an substrate to be polished, and a method for producing the polishing pad. The method comprises dispersing water-soluble particles such as β-cyclodextrin into a crosslinking agent such as a polypropylene glycol so as to obtain a dispersion, mixing the dispersion with a polyisocyanate such as 4,4′-diphenylmethane diisocyanate and/or an isocyanate terminated urethane prepolymer, and reacting the mixed solution so as to obtain a polishing pad having the water-soluble particles dispersed in the matrix.

    摘要翻译: 本发明提供一种抛光垫,其研磨稳定性优异,研磨时的浆料保持性,即使在修整后也能够有效地抑制研磨速度的降低,并且能够使待研磨的基材平坦化的能力优异, 抛光垫。 该方法包括将水溶性颗粒如β-环糊精分散到诸如聚丙二醇的交联剂中以得到分散体,将分散体与多异氰酸酯如4,4'-二苯基甲烷二异氰酸酯和/或异氰酸酯封端 氨基甲酸酯预聚物,并使混合溶液反应,以获得具有分散在基质中的水溶性颗粒的抛光垫。

    Chemical mechanical polishing pad and chemical mechanical polishing method
    9.
    发明授权
    Chemical mechanical polishing pad and chemical mechanical polishing method 有权
    化学机械抛光垫和化学机械抛光方法

    公开(公告)号:US07183213B2

    公开(公告)日:2007-02-27

    申请号:US10892096

    申请日:2004-07-16

    IPC分类号: H01L21/302

    CPC分类号: B24B37/205 B24B37/013

    摘要: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.

    摘要翻译: 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒,并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光面的表面粗糙度(Ra)为10μm以下。

    Chemical mechanical polishing pad, production method thereof, and chemical mechanical polishing process
    10.
    发明申请
    Chemical mechanical polishing pad, production method thereof, and chemical mechanical polishing process 审中-公开
    化学机械抛光垫,其生产方法和化学机械抛光工艺

    公开(公告)号:US20050222336A1

    公开(公告)日:2005-10-06

    申请号:US11050730

    申请日:2005-02-07

    CPC分类号: B24B37/24 B24D18/00

    摘要: A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (A) a styrene polymer and (B) a diene polymer. A method for producing the above chemical mechanical polishing pad, the method comprising the steps of preparing a composition comprising (A) a styrene polymer, (B) a diene polymer and (C) a crosslinking agent, shaping the above composition into a predetermined shape, and heating the composition during or after shaping to cure it. A chemical mechanical polishing process which comprises polishing a surface to be polished of an object to be polished by use of the chemical mechanical polishing pad. According to the present invention, it is possible to provide a chemical mechanical polishing pad which can be suitably applied to polishing of metal film and insulation film, particularly to an STI technique, provides a flat polished surface, can provide a high polishing rate and has a satisfactory useful life.

    摘要翻译: 一种包含水不溶性基质的化学机械抛光垫,其包含(A)苯乙烯聚合物和(B)二烯聚合物。 一种制备上述化学机械抛光垫的方法,所述方法包括以下步骤:制备包含(A)苯乙烯聚合物,(B)二烯聚合物和(C)交联剂的组合物,将上述组合物成形为预定形状 并且在成形期间或之后加热组合物以使其固化。 一种化学机械抛光工艺,其包括通过使用化学机械抛光垫抛光待抛光物体的待抛光表面。 根据本发明,可以提供一种适用于金属膜和绝缘膜的抛光的化学机械抛光垫,特别是对于STI技术,提供平坦的抛光表面,可以提供高抛光速率并具有 令人满意的使用寿命。