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    Post-CMP treating liquid and manufacturing method of semiconductor device using the same
    3.
    发明授权
    Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效
    后CMP处理液和使用其的半导体器件的制造方法

    公开(公告)号：US07951717B2

    公开(公告)日：2011-05-31

    申请号：US11967584

    申请日：2007-12-31

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  C09G1/02

    CPC分类号： H01L21/02074

    摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
    4.
    发明申请
    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
    有机薄膜的化学机械抛光方法及制造半导体器件的方法

    公开(公告)号：US20090068841A1

    公开(公告)日：2009-03-12

    申请号：US12289326

    申请日：2008-10-24

    申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

    发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

    IPC分类号： H01L21/304

    CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

    摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

    摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

    Manufacturing method of a semiconductor device
    5.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08174125B2

    公开(公告)日：2012-05-08

    申请号：US12412811

    申请日：2009-03-27

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

    摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    6.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号：US20110195888A1

    公开(公告)日：2011-08-11

    申请号：US13091732

    申请日：2011-04-21

    申请人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： C11D3/60

    CPC分类号： H01L21/02074

    摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

    Method of manufacturing semiconductor device
    7.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07985685B2

    公开(公告)日：2011-07-26

    申请号：US12262439

    申请日：2008-10-31

    申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

    摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

    摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

    Substrate holding mechanism, substrate polishing apparatus and substrate polishing method
    9.
    发明申请
    Substrate holding mechanism, substrate polishing apparatus and substrate polishing method 有权
    基板保持机构，基板研磨装置和基板研磨方法

    公开(公告)号：US20060205323A1

    公开(公告)日：2006-09-14

    申请号：US10539245

    申请日：2003-12-26

    申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

    IPC分类号： B24B51/00 ,  B24B29/00 ,  B24B47/02

    CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

    摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.

    摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够有效地 防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。 基板保持机构（顶环1）具有安装凸缘2，支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧， 将基板W压在研磨面上。 安装凸缘2设置有与至少保持环3相邻的流动通道26。 通过流路26提供的温度控制气体，以冷却安装凸缘2，支撑构件6和保持环3。 保持环3设置有与流路26连通的多个通孔3a，以将流过流路26的气体喷射到研磨台的研磨面上。

    Semiconductor device containing a dummy wire
    10.
    发明授权
    Semiconductor device containing a dummy wire 有权
    包含虚拟线的半导体装置

    公开(公告)号：US07042099B2

    公开(公告)日：2006-05-09

    申请号：US10640004

    申请日：2003-08-14

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L21/00 ,  H01L27/04 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

    摘要翻译： 公开了一种半导体器件，包括：衬底;第一绝缘膜，设置在衬底上方，并且具有至多预定值的相对介电常数;第二绝缘膜，设置在第一绝缘膜的表面上;以及 具有大于预定值的相对介电常数，设置在通过第二绝缘膜并延伸到第一绝缘膜中的用于导线的凹槽中的导线，以及设置在凹部中的虚拟线，用于 虚线穿过第二绝缘膜并延伸到第一绝缘膜中，并且位于与设置导线的区域间隔开的预定区域中。