High-frequency power amplifier, wireless communication apparatus and wireless communication system

    公开(公告)号:US06605999B2

    公开(公告)日:2003-08-12

    申请号:US09984800

    申请日:2001-10-31

    IPC分类号: H03F330

    摘要: A wireless communication apparatus, which is designed to control the output power without using the power control signal sent from the base station, comprises a high-frequency power amplifier for transmission, a detection means which measures the output power of the power amplifier, and an automatic power control circuit which controls the output power of the power amplifier based on information provided by the detection means. The power amplifier includes an amplifying system which has multiple amplifying stages and is connected between the input and output terminals, and bias circuits which supply bias voltages to transistors of the respective amplifying stages. The bias circuits, which supply the bias voltages to the multiple amplifying stages excluding the last amplifying stage, are each made up of multiple resistors. Each of these bias circuits divides with the resistors the voltage of the entered power control signal to produce a bias voltage, which has a linear response to the control signal for low-power mode, to be fed to the control terminal of the amplifying stage. The bias circuit which supplies a bias voltage to the last amplifying stage includes a circuit which produces a bias voltage which has a nonlinear response to the control signal for high-power mode.

    High frequency power amplifier circuit
    2.
    发明授权
    High frequency power amplifier circuit 有权
    高频功放电路

    公开(公告)号:US06967535B2

    公开(公告)日:2005-11-22

    申请号:US11079113

    申请日:2005-03-15

    CPC分类号: H03G3/3042 H03F1/301

    摘要: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.

    摘要翻译: 包括通过电阻分配器产生栅极偏置电压的偏置电路的模块产生一个问题,即构成偏置电路的电阻的值必须被微调,因此需要额外的修整任务。 本发明提供电流发生器,其响应于控制电压而产生电流变化,而不管晶体管阈值电压的变化,将输出电阻连接到各级的并联晶体管,以形成电流镜电路,并将电流从电流发生器提供给 驱动它们,而不是提供分压。

    High frequency amplifier
    7.
    发明授权
    High frequency amplifier 失效
    高频放大器

    公开(公告)号:US06885246B2

    公开(公告)日:2005-04-26

    申请号:US10369650

    申请日:2003-02-21

    CPC分类号: H03F1/30 H03G3/007

    摘要: The present invention provides a high frequency amplifier using a power supply voltage regulate circuit for the purpose of compensating for variations in power supply voltage. The high frequency amplifier comprises three-stage power amplifiers which amplify an input signal and output the amplified signal, a bias circuit which supplies bias voltages for controlling these power amplifiers, a regulate circuit which compensates for variations in noise or gain with respect to the variations in the power supply voltage for driving the power amplifiers, etc. The regulate circuit holds constant an output voltage Vddc with respect to variations in power supply voltage Vdd and outputs the constant-held output voltage Vddc as a power supply voltage for the power amplifiers.

    摘要翻译: 本发明提供一种使用电源电压调节电路的高频放大器,用于补偿电源电压的变化。 高频放大器包括放大输入信号并输出​​放大信号的三级功率放大器,提供用于控制这些功率放大器的偏置电压的偏置电路,补偿相对于变化的噪声或增益的变化的调节电路 用于驱动功率放大器的电源电压等。调节电路相对于电源电压Vdd的变化保持恒定的输出电压Vddc,并将恒定输出电压Vddc作为功率放大器的电源电压输出。

    High-frequency power amplification electronic part and wireless communication system
    8.
    发明授权
    High-frequency power amplification electronic part and wireless communication system 有权
    高频功率放大电子部件和无线通信系统

    公开(公告)号:US06958649B2

    公开(公告)日:2005-10-25

    申请号:US11097271

    申请日:2005-04-04

    摘要: A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit. The bias control circuit supplies at least two diode characteristic elements with a predetermined current each in order to generate at least two voltages demonstrating different temperature characteristics, the bias control circuit further using the generated voltages as a basis for generating either a plurality of bias currents or a plurality of bias voltages having a desired temperature-dependent rate of change each, the generated bias currents or bias voltages being fed to each of the plural amplifier stages constituting the power amplifier circuit.

    摘要翻译: 公开了一种高频功率放大电子部件,其包括功率放大器电路和偏置控制电路,所述功率放大器电路具有用于放大输入高频信号的多个放大器级,所述偏置控制电路用于偏置功率 放大电路。 功率放大器电路根据输入功率来控制输出功率,该功率随着功率放大器电路的增益被偏置电流或从偏置控制电路提供的偏置电压固定而变化。 偏置控制电路提供至少两个具有预定电流的二极管特征元件,以便产生表现出不同温度特性的至少两个电压,偏置控制电路进一步使用产生的电压作为产生多个偏置电流或 多个具有期望的温度相关变化率的偏置电压,所产生的偏置电流或偏置电压被馈送到构成功率放大器电路的多个放大器级中的每一个。

    Electric component for high frequency power amplifier
    9.
    发明授权
    Electric component for high frequency power amplifier 有权
    高频功率放大器的电气元件

    公开(公告)号:US07271658B2

    公开(公告)日:2007-09-18

    申请号:US11149265

    申请日:2005-06-10

    IPC分类号: H03F3/04

    摘要: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

    摘要翻译: 其中工作电压由基于振幅信息的控制信号控制的RF功率模块包括温度检测装置,其设置在形成有放大晶体管的半导体芯片或形成有电源电路的半导体芯片上; 以及设置在形成有该器件或不同半导体芯片的半导体芯片上的具有滞后特性的检测器,对温度检测装置施加偏压以比较两个基准电平的器件的状态,输出指示异常的信号 判断由温度检测装置形成的半导体芯片的温度高于预定温度,并且当判断半导体芯片的温度低于低于预定温度的第二预定温度时,输出表示正常的信号。

    Electric component for high frequency power amplifier
    10.
    发明申请
    Electric component for high frequency power amplifier 有权
    高频功率放大器的电气元件

    公开(公告)号:US20050280471A1

    公开(公告)日:2005-12-22

    申请号:US11149265

    申请日:2005-06-10

    摘要: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

    摘要翻译: 其中工作电压由基于振幅信息的控制信号控制的RF功率模块包括温度检测装置,其设置在形成有放大晶体管的半导体芯片或形成有电源电路的半导体芯片上; 以及设置在形成有该器件或不同半导体芯片的半导体芯片上的具有滞后特性的检测器,对温度检测装置施加偏压以比较两个基准电平的器件的状态,输出指示异常的信号 判断由温度检测装置形成的半导体芯片的温度高于预定温度,并且当判断半导体芯片的温度低于低于预定温度的第二预定温度时,输出表示正常的信号。