System performance profiling device integrated inside a system-on-chip
    1.
    发明授权
    System performance profiling device integrated inside a system-on-chip 失效
    系统性能分析设备集成在片内系统中

    公开(公告)号:US07765087B2

    公开(公告)日:2010-07-27

    申请号:US11887485

    申请日:2006-04-07

    IPC分类号: G06F11/30 G06F11/00

    摘要: A system performance profiling device is provided inside a system-on-chip (SoC). Selectors respectively select values of predetermined bit positions of counters and output the selected values to the outside of the system-on-chip, during a period of acquisition of profiling data. When the acquisition of the profiling data ends, the selectors respectively select values of all lower bit positions of the counters than the predetermined bit positions, and output the selected values to the outside of the system-on-chip.

    摘要翻译: 在片内系统(SoC)内部提供系统性能分析设备。 在采集数据的时间段期间,选择器分别选择计数器的预定位位置的值并将所选择的值输出到片上系统的外部。 当获取分析数据结束时,选择器分别选择计数器的所有较低位位置的值比预定位位置,并将选择的值输出到片上系统的外部。

    Electric actuator
    2.
    发明授权
    Electric actuator 有权
    电动执行器

    公开(公告)号:US07679236B2

    公开(公告)日:2010-03-16

    申请号:US11186439

    申请日:2005-07-21

    IPC分类号: H02K5/22

    摘要: An electric actuator, which includes an exposed actuator terminal, for eliminating the need for insert molding and facilitating the manufacturing of a housing while preventing liquid from entering the housing. The actuator includes a motor. The housing is attached to the motor and includes an opening. A control circuit board accommodated in the housing controls the motor. An actuator terminal is arranged on the control circuit board and connected to an external terminal of an external connector through the opening. A terminal support arranged on the control circuit board supports the actuator terminal. A hollow fitting is attached to the terminal support and fitted into the opening so as to extend into the housing. A seal, arranged between the terminal support and the fitting, seals the housing.

    摘要翻译: 一种电致动器,其包括暴露的致动器端子,用于消除对嵌入成型的需要,并且有助于制造壳体同时防止液体进入壳体。 致动器包括电动机。 壳体附接到电动机并且包括开口。 容纳在壳体中的控制电路板控制电动机。 致动器端子布置在控制电路板上,并通过开口连接到外部连接器的外部端子。 布置在控制电路板上的端子支架支撑致动器端子。 中空配件连接到端子支撑件并装配到开口中以延伸到壳体中。 布置在端子支架和配件之间的密封件密封壳体。

    Methods for manufacturing substrates to form monocrystalline diamond
films by chemical vapor deposition
    3.
    发明授权
    Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition 失效
    通过化学气相沉积制造衬底以形成单晶金刚石膜的方法

    公开(公告)号:US5755879A

    公开(公告)日:1998-05-26

    申请号:US560078

    申请日:1995-11-17

    摘要: A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

    摘要翻译: 提出了一种制造用于通过化学气相沉积(CVD)在大面积上以低成本生长单晶金刚石膜的衬底的方法。 衬底材料是Pt或其合金,其已经经历单次或多次清洁循环,辊压机和高温退火工艺,以使衬底材料的厚度为0.5mm或更小,或最优选为0.2 (111)或两者的角度偏差的(111)晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。 退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性,从而将其投入实际应用中。

    Diamond Schottky diode with oxygen
    4.
    发明授权
    Diamond Schottky diode with oxygen 失效
    金刚石肖特基二极管与氧气

    公开(公告)号:US5352908A

    公开(公告)日:1994-10-04

    申请号:US145307

    申请日:1993-11-03

    CPC分类号: H01L29/1602 H01L29/872

    摘要: A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.

    摘要翻译: 包括导电衬底,半导体金刚石层和绝缘金刚石层的多层结构的金刚石肖特基二极管和金属电极。 该二极管在反向偏置下具有更大的势垒,因此具有较小的反向电流的整流特性。

    Electromagnetically controlled spring clutch mechanism
    5.
    发明授权
    Electromagnetically controlled spring clutch mechanism 失效
    电磁控制弹簧离合器机构

    公开(公告)号:US5031744A

    公开(公告)日:1991-07-16

    申请号:US593642

    申请日:1990-10-05

    申请人: Kozo Nishimura

    发明人: Kozo Nishimura

    IPC分类号: F16D27/10 F16D27/105

    CPC分类号: F16D27/105 F16D2027/008

    摘要: An electromagnetically controlled spring clutch mechanism includes a rotating output member, a rotating input member, a coil spring fitted astride the outer peripheral portions of these two members, an armature assembly disposed on the outer peripheral portion of the coil spring, and an electromagnetic coil assembly. When the electromagnetic coil is deenergized, the coil spring contracts in a tightening direction so that the output and input members are drivingly coupled together. When the electromagnetic coil is energized, rotation of the armature assembly is hampered, and the coil spring expands so that the output and input members are decoupled.

    Electromagnetically controlled spring clutch mechanism
    6.
    发明授权
    Electromagnetically controlled spring clutch mechanism 失效
    电磁控制弹簧离合器机构

    公开(公告)号:US4913274A

    公开(公告)日:1990-04-03

    申请号:US268954

    申请日:1988-11-09

    申请人: Kozo Nishimura

    发明人: Kozo Nishimura

    CPC分类号: F16D67/06 F16D27/105

    摘要: An electromagnetically controlled spring clutch mechanism for transmitting the rotating forces of an input rotating element adapted to rotate in a predetermined direction and in a direction opposite thereto to an output rotating element. According to one aspect, a first spring clutch mechanism and a second spring clutch mechanism are interposed between the input rotating element and the output rotating element, and the rotating force of the input rotating element in the predetermined direction is transmitted to the output rotating element by the contraction of a coil spring in the first spring clutch mechanism and the rotating force of the input rotating element in the opposite direction is transmitted to the output rotating element by the contraction of a coil spring in the second spring clutch mechanism. According to a second aspect, an inside transmission and an outside transmission are disposed between the input rotating element and the outside rotating element; and the rotating force of the input rotating element in the predetermined direction is transmitted to the output rotating element via the inside transmission by the contraction of the coil spring, and the rotating force of the input rotating element in the opposite direction is transmitted to the output rotating element via the outside transmission by the expansion of the coil spring. According to a third aspect, a brake is disposed in relation to the output rotating element.

    Directional indicator for a vehicle
    7.
    发明授权
    Directional indicator for a vehicle 有权
    车辆定向指示器

    公开(公告)号:US09041526B2

    公开(公告)日:2015-05-26

    申请号:US12639974

    申请日:2009-12-16

    申请人: Kozo Nishimura

    发明人: Kozo Nishimura

    IPC分类号: B60Q1/40 B60Q1/42

    CPC分类号: B60Q1/42

    摘要: A directional indicator includes a momentary type turn signal lever supported to undergo a swing operation and automatically returning to a neutral position after the swing operation, a turn switch operated by the swing operation of the turn signal lever in a first zone for generating a turn signal for informing a driving direction of a vehicle and for setting an auto turn cancel mode for automatically canceling the turn signal, a manual switch operated by the swing operation of the turn signal lever in a second zone for setting a manual mode for manually canceling the turn signal, and a turn signal control section for controlling cancellation of the turn signal based on an operating state of the turn switch and the manual switch.

    摘要翻译: 方向指示器包括被支撑以经历回转操作并且在回转操作之后自动返回到中立位置的瞬时型转向信号杆,通过转向信号杆在第一区域中的回转操作而操作的转动开关,用于产生转向信号 为了通知车辆的行驶方向,并且设定用于自动取消转向信号的自动转向取消模式,通过转向信号杆的摆动操作操作的手动开关在用于设定手动取消转弯的手动模式的第二区域中 信号和转向信号控制部分,用于基于转向开关和手动开关的操作状态来控制转向信号的取消。

    STATION, TARGET APPARATUS, INITIATOR APPARATUS, COMMUNICATION SYSTEM, AND COMMUNICATION METHOD
    8.
    发明申请
    STATION, TARGET APPARATUS, INITIATOR APPARATUS, COMMUNICATION SYSTEM, AND COMMUNICATION METHOD 有权
    台站,目标装置,发射机装置,通信系统和通信方法

    公开(公告)号:US20130332504A1

    公开(公告)日:2013-12-12

    申请号:US13985999

    申请日:2012-03-09

    IPC分类号: H04L29/08

    摘要: A plurality of networks each having a host are connected to achieve a transparent transaction between devices belonging to the different networks. A target apparatus includes a station and a host. In response to a get device handle request from an initiator apparatus, the station acquires, from the host, configuration information of a target device and relays transactions between the initiator apparatus and the target device, without requiring involvement of the host.

    摘要翻译: 每个具有主机的多个网络被连接以实现属于不同网络的设备之间的透明事务。 目标设备包括站和主机。 响应于来自发起者设备的获取设备处理请求,站从主机获取目标设备的配置信息,并且中继启动器设备和目标设备之间的事务,而不需要主机的参与。

    Semiconductor Memory Device, Rewrite Processing Method Therefor, and Program Thereof
    9.
    发明申请
    Semiconductor Memory Device, Rewrite Processing Method Therefor, and Program Thereof 失效
    半导体存储器件,其重写处理方法及其程序

    公开(公告)号:US20080049535A1

    公开(公告)日:2008-02-28

    申请号:US11631482

    申请日:2005-07-14

    申请人: Kozo Nishimura

    发明人: Kozo Nishimura

    IPC分类号: G11C8/00

    CPC分类号: G11C16/3404 G11C2029/0409

    摘要: A comparing unit (12) in a readout control unit (11) compares one bit data stored in a memory body (20) with a value stored in a data storage unit B[m] which is prepared to store the one bit data. The data storage unit B[m] includes three memory cells MC[k] and the stored value of the data storage unit B[m] is obtained by a logical operation unit (16) operable to calculate an exclusive OR with respect to the three memory cells MC[k]. When mismatching is detected in the comparing unit (12), a rewrite cell determination unit (13) determines one of the three memory cells MC[k], to which rewriting of the stored value is performed. In the case where the stored value in the data storage unit B[m], if the data storage unit B[m] has a memory cell MC[k] to which writing can be performed, the writing is performed in priority to erasing.

    摘要翻译: 读出控制单元(11)中的比较单元(12)将存储在存储器主体(20)中的一个位数据与存储在存储一位数据的数据存储单元B [m]中的值进行比较。 数据存储单元B [m]包括三个存储单元MC [k],并且数据存储单元B [m]的存储值通过逻辑运算单元(16)获得,逻辑运算单元(16)可运算来计算相对于三 记忆单元MC [k]。 当在比较单元(12)中检测到不匹配时,重写单元确定单元(13)确定执行存储值重写的三个存储单元MC [k]中的一个。 在数据存储单元B [m]中的存储值的情况下,如果数据存储单元B [m]具有可以执行写入的存储单元MC [k],则优先执行写入以进行擦除。

    Methods for manufacturing monocrystalline diamond films
    10.
    发明授权
    Methods for manufacturing monocrystalline diamond films 失效
    制造单晶金刚石薄膜的方法

    公开(公告)号:US5814149A

    公开(公告)日:1998-09-29

    申请号:US560077

    申请日:1995-11-17

    摘要: A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.

    摘要翻译: 一种方法涉及通过化学气相沉积在大面积上以低成本生长单晶金刚石膜。 衬底材料是Pt或其合金的块状单晶,或者是沉积在合适的支撑材料上的那些材料的薄膜。 这些基材的表面必须是(111)或(001),或者必须具有由(111)或(001)晶体表面组成的畴结构。 那些表面可以从(111)或(001)的+/- 10度角倾斜。 为了增加金刚石的成核密度,可以通过抛光和/或超声波抛光或植入碳来划伤基底表面。 即使衬底表面被粗糙化,也可以生长单晶金刚石膜。 衬底表面的等离子体清洗和Pt或其合金膜的退火在生长高品质单晶金刚石膜方面是有效的。