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    NOVEL ALCOHOLIC BEVERAGE
    2.
    发明申请
    NOVEL ALCOHOLIC BEVERAGE 审中-公开
    新型酒精饮料

    公开(公告)号：US20120237645A1

    公开(公告)日：2012-09-20

    申请号：US13485986

    申请日：2012-06-01

    申请人： Yutaka Masuda ,  Yoshihiro Yokota ,  Masakatsu Usui ,  Keiko Seki

    发明人： Yutaka Masuda ,  Yoshihiro Yokota ,  Masakatsu Usui ,  Keiko Seki

    IPC分类号： C12H1/00 ,  A23L3/36 ,  G01N33/14 ,  A23P1/16

    CPC分类号： A23G9/46 ,  A23G9/045 ,  A23G9/32 ,  C12G3/04

    摘要： A process for preparation of an alcoholic beverage produced by mixing an alcoholic beverage base mix containing alcohol and at least one type of water-soluble substance with ice pieces in a proportion of 20:80 to 80:20, and conducting aeration, agitation and cooling so that the volume fraction of contained gas is in the range of 1 to 150% and the mixing temperature is lower than −1° C., thereby obtaining a gas-containing matter having an alcohol concentration of ≧1.0 vol. % and being fluid at −15° to −2° C., wherein fine ice pieces of 0.06 to 0.8 mm major axis length are present in an amount of at least 80 wt. % based on the total weight so that at least part of the fine ice pieces are sensed.

    摘要翻译： 一种制备通过将包含醇和至少一种类型的水溶性物质的酒精饮料基料混合物与冰块以20:80至80:20的比例混合而制备的酒精饮料的方法，并进行曝气，搅拌和冷却 使得所含气体的体积分数在1〜150％的范围内，混合温度低于-1℃，得到醇浓度为1.0体积％的含气体物质。 ％且在-15℃至-2℃下是流体，其中0.06至0.8mm长轴长度的细冰块以至少80重量％的量存在。 基于总重量的％，使得至少部分细冰块被感测。

    Beam Detector and Beam Monitor Using The Same
    3.
    发明申请
    Beam Detector and Beam Monitor Using The Same 审中-公开
    光束检测器和使用它的光束监视器

    公开(公告)号：US20100219350A1

    公开(公告)日：2010-09-02

    申请号：US12223074

    申请日：2007-02-27

    申请人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

    发明人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

    IPC分类号： G01T1/202 ,  C09K11/65

    CPC分类号： G01T1/29 ,  C23C16/0254 ,  C23C16/274 ,  C23C16/277

    摘要： A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device.In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.

    摘要翻译： 提供了一种使用其的光束检测器和光束监视器，该光束检测器能够长时间精确而稳定地检测位置，强度分布以及辐射束随时间的变化， 射线束等，并且与传统的检测装置相比以低成本制造。 在用于检测光束的位置和强度的光束检测器2中，用光束7照射的光束照射部分6由多晶金刚石（C）膜4形成，该多晶金刚石（C）膜4包含至少一种选自以下的元素（X）： 在X / C下，硅（Si），氮（N），锂（Li），铍（Be），硼（B），磷（P），硫（S），镍（Ni）和钒 为0.1〜1000ppm，并且该多晶金刚石膜4具有在用光束7照射时进行发光8和8a的发光功能。通过如上所述的光束检测器2和发光观察装置3和3a， 观察上述发光现象，形成光束监视器1。

    Semiconductor device and method for manufacturing multilayered substrate for semiconductor device
    4.
    发明授权
    Semiconductor device and method for manufacturing multilayered substrate for semiconductor device 有权
    半导体装置用多晶半导体装置及其制造方法

    公开(公告)号：US07285479B2

    公开(公告)日：2007-10-23

    申请号：US11328162

    申请日：2006-01-10

    申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

    发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

    IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

    CPC分类号： H01L21/022 ,  C23C16/01 ,  C23C16/274 ,  C23C16/278 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/0405 ,  H01L21/3146 ,  H01L21/76256 ,  H01L2221/68363

    摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

    摘要翻译： 提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。 通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。 在该金刚石层上形成SiO 2层。 通过热氧化法在第二硅衬底的表面上形成SiO 2层。 金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。 通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。 通过CVD法在金刚石层上形成用作半导体层的硅层。

    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
    5.
    发明申请
    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film 有权
    高取向金刚石膜，其制造方法以及具有高取向金刚石膜的电子器件

    公开(公告)号：US20060112874A1

    公开(公告)日：2006-06-01

    申请号：US11281607

    申请日：2005-11-18

    申请人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

    发明人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

    IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B29/04 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B25/105 ,  H01L29/045 ,  H01L29/1602 ,  Y10T428/30

    摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

    摘要翻译： 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。

    Diamond semiconductor device and method for manufacturing the same
    6.
    发明申请
    Diamond semiconductor device and method for manufacturing the same 失效
    金刚石半导体器件及其制造方法

    公开(公告)号：US20050127373A1

    公开(公告)日：2005-06-16

    申请号：US11003510

    申请日：2004-12-06

    申请人： Yoshihiro Yokota ,  Nobuyuki Kawakami ,  Takeshi Tachibana ,  Kazushi Hayashi

    发明人： Yoshihiro Yokota ,  Nobuyuki Kawakami ,  Takeshi Tachibana ,  Kazushi Hayashi

    IPC分类号： H01L27/12 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L29/15

    CPC分类号： H01L29/1602 ,  H01L29/78

    摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.

    摘要翻译： 金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。 第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。 第一和第二端部具有取决于衬底的取向外延形成的斜面。 第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。