SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, SENSOR AND ELECTRO-OPTICAL DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, SENSOR AND ELECTRO-OPTICAL DEVICE 有权
    半导体器件,其制造方法,传感器和电光器件

    公开(公告)号:US20090294765A1

    公开(公告)日:2009-12-03

    申请号:US12474931

    申请日:2009-05-29

    IPC分类号: H01L29/786 H01L21/336

    CPC分类号: H01L21/28194 H01L29/7869

    摘要: A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

    摘要翻译: 在基板上依次形成栅电极,栅极绝缘膜和无机氧化物膜,并且形成源电极和漏电极以部分地覆盖无机氧化物膜。 然后,进行氧化处理以降低未被电极覆盖的无机氧化物膜的区域的载流子密度,并用作半导体器件的沟道区域。

    PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS
    5.
    发明申请
    PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS 审中-公开
    用于制造薄膜装置的方法以及由该方法生产的装置

    公开(公告)号:US20090035536A1

    公开(公告)日:2009-02-05

    申请号:US12181897

    申请日:2008-07-29

    IPC分类号: G03G7/00 B05D3/00

    摘要: In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.

    摘要翻译: 在制造薄膜器件的方法中,在包含树脂材料作为主要成分的衬底上形成热缓冲层,并且在衬底的至少一个区域上形成光切割层, 不要形成要退火的非单晶膜,其中通过减少到达基板的短波长光的比例,光切割层防止从短波长光到基板的损坏。 此后,将要退火的非单晶膜以具有热缓冲层的衬底上的图案形成,并且通过用短波长的光照射非单晶膜以形成无机膜,从而退火 非单晶膜。