摘要:
A plant activator which is strip-shaped, and includes a silicon layer provided on one or both surfaces of the base sheet or within a base sheet and containing Si or SiO.sub.X (0
摘要:
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
摘要:
The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75
摘要:
In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.
摘要:
The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75
摘要:
During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103Ω·cm or more.
摘要:
A D-E hysteresis loop of ferroelectrics known in the art has a square shape when the ferroelectrics are a BaTiO.sub.3 single crystal. Such ferroelectrics are used as a non-linear dielectric element of, for example a pulse generating device. The non-linear dielectric element according to the present invention consists of a polycrystal, which is mainly composed of BaTiO.sub.3 and has the chemical composition expressed by the formula A.sub.y B.sub.z O.sub.3, wherein the molar ratio of y/z ranges from 0.92 to 0.99. The non-linearity is excellent and the temperature dependence of the A.sub.y B.sub.z O.sub.3 composition is considerably low.
摘要:
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75
摘要:
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.