摘要:
A pattern forming method, comprising the steps of providing a resist film on a substrate; providing a photosensitive film containing a photosensitive diazonium salt on the resist film; and then subjecting the resultant composite to pattern exposure by use of a light to which both of the resist film and the photosensitive diazonium salt are sensitive, can employ a composition for pattern formation which comprises a photosensitive diazonium salt, a resin binder and a solvent. By this method, a minute pattern of 1 .mu.m or less can be formed, utilizing effectively the UV-ray exposure technique of the prior art, with good dimensional precision and stability.
摘要:
Disclosed are a safe slurry photosensitive composition superior in image formation capabilities such as resolution and sensitivity and containing no harmful compound, and a safe water-soluble photosensitive composition capable of being dissolved in water without using any organic solvent while maintaining a sufficient sensitivity as a resist and containing no harmful substance. The slurry photosensitive composition contains a compound which generates an acid when irradiated with light or ionizing radiation, at least one type of a resin with acid-crosslinkability or acid-decomposability, and a powder. Various devices can be manufactured by forming a layer of this photosensitive composition on a substrate, exposing the layer to light in accordance with a desired pattern, and heating the layer. The water-soluble photosensitive composition contains a compound which generates an acid when irradiated with light or ionizing radiation, and an acetal resin. This water-soluble photosensitive composition is coated on a substrate and irradiated with light or ionizing radiation in accordance with a desired pattern. The resultant substrate is chemically amplified by heating and developed with water. This makes it possible to safely form a pattern without using any ventilator.
摘要:
Disclosed are a safe slurry photosensitive composition superior in image formation capabilities such as resolution and sensitivity and containing no harmful compound, and a safe water-soluble photosensitive composition capable of being dissolved in water without using any organic solvent while maintaining a sufficient sensitivity as a resist and containing no harmful substance. The slurry photosensitive composition contains a compound which generates an acid when irradiated with light or ionizing radiation, at least one type of a resin with acid-crosslinkability or acid-decomposability, and a powder. Various devices can be manufactured by forming a layer of this photosensitive composition on a substrate, exposing the layer to light in accordance with a desired pattern, and heating the layer. The water-soluble photosensitive composition contains a compound which generates an acid when irradiated with light or ionizing radiation, and an acetal resin. This water-soluble photosensitive composition is coated on a substrate and irradiated with light or ionizing radiation in accordance with a desired pattern. The resultant substrate is chemically amplified by heating and developed with water. This makes it possible to safely form a pattern without using any ventilator.
摘要:
A photosensitive material, which comprises, an alkali-soluble resin moiety having an alicyclic skeleton, a polycyclic condensation skeleton, or both alicyclic and polycyclic condensation skeletons, and a diazo compound moiety. The diazo compound moiety may be contained in a side chain of the alkali-soluble resin moiety or included in the photosensitive material in separate from the alkali-soluble resin moiety.
摘要:
In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要:
An exposure mask for lithography, a method of manufacturing the same, and an exposure method using the same are disclosed. A light-transmitting opening of the exposure mask has a main light-transmitting region located in the middle of the opening and having a first optical path length, and phase shift regions adjacent to a light-shielding layer and having a second optical path length, different from the first optical path length. Light transmitted through each phase shift region interferes with light transmitted through the main light-transmitting region at the edges of the light-transmitting opening, thus enabling a sharp photo-intensity distribution of total transmitted light to be obtained. As a result, the resolution of the exposure mask is improved.
摘要:
A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.
摘要:
A photosensitive composition comprising a polymer having a repeating segment represented by the following general formula (1A) and a compound which is capable of generating an acid by irradiation of an actinic radiation. wherein R11 is a hydrogen atom, an aliphatic hydrocarbon group, an alcoxy group, a halogen atom or a cyano group, R12 is an aliphatic hydrocarbon group or a cyclic olefin, R13 is either one of (a) a straight-chain olefin having 2 to 12 carbon atoms, a cyclic olefin or a heterocyclic group and (b) a hydrocarbon group represented by — (CH2)m—(m is an integer of 3 to 9), and R14 is a hydrophilic group.
摘要:
There is disclosed a color developing resin composition comprising a base polymer, a dialdehyde represented by the general formula OHC--R.sup.1' --CHO, a diamine represented by the general formula H.sub.2 N--R.sup.2' --NH.sub.2 (at least one of R.sup.1' and R.sup.2' is an aromatic group), a compound which produces an acid by light irradiating and a resin which is crosslinked with the acid.
摘要:
In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.