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公开(公告)号：US20080151952A1
公开(公告)日：2008-06-26
申请号：US12000929
申请日：2007-12-19
CPC分类号： B82Y20/00 , H01L31/0203 , H01L31/143 , H01L31/18 , H01S5/0021 , H01S5/02212 , H01S5/02224 , H01S5/0425 , H01S5/0683 , H01S5/2222 , H01S5/2231 , H01S5/3063 , H01S5/34333
摘要： A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.
摘要翻译： 氮化物半导体器件包括茎。 杆上设有散热器。 至少一个氮化物半导体发光元件连接到散热器。 用于检测来自半导体发光元件的光的光检测元件设置在杆上。 用于将封装在其中的散热片，半导体发光元件和光检测元件封装的盖连接到该杆上。 帽中的空间具有封装的气氛。 封装的气氛含有抑制半导体发光元件中含有的氢原子扩散的成分。 本发明抑制了由于操作电压的增加引起的缺陷，从而提高了商品的比例，从而提高了半导体发光装置的制造成品率。
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公开(公告)号：US07656916B2
公开(公告)日：2010-02-02
申请号：US12000929
申请日：2007-12-19
IPC分类号： H01S3/04
CPC分类号： B82Y20/00 , H01L31/0203 , H01L31/143 , H01L31/18 , H01S5/0021 , H01S5/02212 , H01S5/02224 , H01S5/0425 , H01S5/0683 , H01S5/2222 , H01S5/2231 , H01S5/3063 , H01S5/34333
摘要： A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.
摘要翻译： 氮化物半导体器件包括茎。 杆上设有散热器。 至少一个氮化物半导体发光元件连接到散热器。 用于检测来自半导体发光元件的光的光检测元件设置在杆上。 用于将封装在其中的散热片，半导体发光元件和光检测元件封装的盖连接到该杆上。 帽中的空间具有封装的气氛。 封装的气氛含有抑制半导体发光元件中含有的氢原子扩散的成分。 本发明抑制了由于操作电压的增加引起的缺陷，从而提高了商品的比例，从而提高了半导体发光装置的制造成品率。
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公开(公告)号：US20070029571A1
公开(公告)日：2007-02-08
申请号：US11496524
申请日：2006-08-01
IPC分类号： H01L33/00
CPC分类号： H01L33/483 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02224 , H01S5/024 , H01S5/32341 , H01L2924/00014
摘要： In a nitride semiconductor light-emitting device, a cap is pressure-bonded on the top surface of a stem under electric discharge to form a package. The package encloses a heatsink, a nitride semiconductor laser element, electrode pins, and wires, and has sealed inside it a gas containing oxygen as a sealed atmosphere. At least the inner surface of the cap is plated with Ni and Pd, which are metals that can occlude hydrogen.
摘要翻译： 在氮化物半导体发光装置中，在放电状态下将帽压在杆的顶面上，形成封装。 封装封装散热片，氮化物半导体激光元件，电极针和电线，并在其内部密封含有氧的气体作为密封的气氛。 至少盖的内表面镀有Ni和Pd，它们是可以堵塞氢的金属。
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公开(公告)号：US08203152B2
公开(公告)日：2012-06-19
申请号：US11259035
申请日：2005-10-27
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译： 氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。 绝缘层与氮化物半导体层接触。 在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。 作为主要成分的防分离层含有选自钨，钼，铬，钛，镍，铪，锌，铟，钇等金属的金属中的至少一种以上的金属。
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公开(公告)号：US20060091501A1
公开(公告)日：2006-05-04
申请号：US11259035
申请日：2005-10-27
IPC分类号： H01L29/20
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： Provided are a nitride semiconductor device and a manufacturing method thereof The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译： 提供一种氮化物半导体器件及其制造方法。氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。 绝缘层与氮化物半导体层接触。 在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。 作为主要成分，分离防止层具有选自钨，钼，铬，钛，镍，铪，锌，铟和钇中的至少一种金属的氧化物。
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公开(公告)号：US07700001B2
公开(公告)日：2010-04-20
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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公开(公告)号：US20080217579A1
公开(公告)日：2008-09-11
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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8.发明授权公开(公告)号：US08287760B2
公开(公告)日：2012-10-16
申请号：US12710105
申请日：2010-02-22
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： F21K2/00
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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公开(公告)号：US08253240B2
公开(公告)日：2012-08-28
申请号：US12292672
申请日：2008-11-24
IPC分类号： H01L23/12
CPC分类号： H01S5/02212 , H01L2224/48091 , H01L2924/19107 , H01S5/02296 , H01L2924/00014
摘要： A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.
摘要翻译： 提供了能够减轻可靠性降低并提高制造成品率的盖构件。 盖构件具有圆筒形侧壁部分，顶面部分，其封闭侧壁部分的一端并且具有形成在其中的光出射孔，以允许从半导体激光芯片提取激光; 安装在顶面部上以阻止光射出孔的光透射窗，以及布置在侧壁部分的另一端并焊接在其上安装半导体激光芯片的杆的上表面上的凸缘部分。 在顶面部的内表面形成有槽部，该槽部使顶面部的一部分成为比其他部分厚的规定区域。
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公开(公告)号：US20060187994A1
公开(公告)日：2006-08-24
申请号：US11402926
申请日：2006-04-13
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01S3/09
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。
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