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公开(公告)号：US08394228B2
公开(公告)日：2013-03-12
申请号：US12555481
申请日：2009-09-08
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.
摘要翻译： 从衬底去除材料，优选光致抗蚀剂的方法包括将包含硫酸和/或其干燥物质和前体并且具有不大于5:1的水/硫酸摩尔比的液体硫酸组合物分配到材料 涂覆的基材的量可以有效地基本上均匀地涂覆涂覆有材料的基材。 优选在分配液体硫酸组合物之前，期间或之后将基材加热至至少约90℃的温度。 在基板处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可以有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前 暴露于水蒸汽。 然后优选冲洗基材以除去材料。
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公开(公告)号：US20100018951A1
公开(公告)日：2010-01-28
申请号：US12555481
申请日：2009-09-08
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.
摘要翻译： 从衬底去除材料，优选光致抗蚀剂的方法包括将包含硫酸和/或其干燥物质和前体并且具有不大于5:1的水/硫酸摩尔比的液体硫酸组合物分配到材料 涂覆的基材的量可以有效地基本上均匀地涂覆涂覆有材料的基材。 优选在分配液体硫酸组合物之前，期间或之后将基材加热至至少约90℃的温度。 在基板处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可以有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前 暴露于水蒸汽。 然后优选冲洗基材以除去材料。
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公开(公告)号：US07592264B2
公开(公告)日：2009-09-22
申请号：US11603634
申请日：2006-11-22
IPC分类号： H01L21/302
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.
摘要翻译： 从衬底去除材料，优选光致抗蚀剂的方法包括将包含硫酸和/或其干燥物质和前体并且具有不大于5:1的水/硫酸摩尔比的液体硫酸组合物分配到材料 涂覆的基材的量可以有效地基本上均匀地涂覆涂覆有材料的基材。 优选在分配液体硫酸组合物之前，期间或之后将基材加热至至少约90℃的温度。 在基板处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可以有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前 暴露于水蒸汽。 然后优选冲洗基材以除去材料。
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公开(公告)号：US07244315B2
公开(公告)日：2007-07-17
申请号：US10608894
申请日：2003-06-27
IPC分类号： B08B3/00
CPC分类号： B08B3/102 , B08B3/048 , H01L21/67028 , H01L21/67057 , Y10S134/902
摘要： Improved methods of rinsing and drying microelectronic devices by way of an immersion processing apparatus are provided for effectively cleaning microelectronic devices. Methods and arrangements control the separation of one or more microelectronic devices from a liquid environment as part of a replacement of the liquid environment with a gas environment. Cleaning enhancement substance, such as IPA, is introduced into the gas environment according to a controlled profile while the separation step is conducted. The controlled profile being directed to the timing of introduction of cleaning enhancement substance, the concentration of cleaning enhancement substance and/or flow rates thereof into the vessel. Controlled timing of gas and cleaning enhancement substance delivery can also improve effectiveness of separation. Methods and arrangements are also provided for controlling a drying step to be conducted on the one or more microelectronic devices after they have been separated from a liquid environment by replacing the liquid environment with a gas environment. Preferably, an arrangement of gas distribution devices create one or more drying gas curtains, which gas curtains may be controllably directed with respect to a set of microelectronic devices to provide optimal drying of the microelectronic devices after being separating from a liquid.
摘要翻译： 提供了通过浸没处理设备漂洗和干燥微电子器件的改进方法，用于有效地清洁微电子器件。 方法和装置控制一个或多个微电子器件与液体环境的分离，作为用气体环境替代液体环境的一部分。 清洁增强物质，如IPA，在进行分离步骤的同时，根据受控的轮廓引入气体环境。 控制的轮廓涉及引入清洁增强物质的时间，清洁增强物质的浓度和/或其流量进入容器。 气体和清洁增强物质输送的控制时间也可以提高分离的有效性。 还提供了用于控制在一个或多个微电子器件通过用气体环境替换液体环境而与液体环境分离之后进行干燥步骤的方法和装置。 优选地，气体分配装置的布置产生一个或多个干燥气体窗帘，该气帘可以相对于一组微电子装置可控制地引导，以在与液体分离之后提供微电子装置的最佳干燥。
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公开(公告)号：US5325175A
公开(公告)日：1994-06-28
申请号：US880632
申请日：1992-05-08
申请人： Hans W. Mocker , Thomas J. Wagener
发明人： Hans W. Mocker , Thomas J. Wagener
CPC分类号： G01S17/58 , G01P3/36 , G01S7/4812 , G01S7/484 , G01S7/4917
摘要： A solid-block homodyne Doppler interferometer utilizing continuous-wave or pulse-wave light beam technology. A pulse-wave light beam version of the homodyne interferometer compares the pulse-wave return signal with a continuous-wave local oscillator signal, thereby permitting the interferometer to be utilized over a wide range of distances.
摘要翻译： 利用连续波或脉冲波光束技术的固体块差分多普勒干涉仪。 零差干涉仪的脉冲波光束版本将脉冲波返回信号与连续波局部振荡器信号进行比较，从而允许在宽范围的距离上使用干涉仪。
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6.发明授权Method for transferring a microelectronic device to and from a processing chamber 有权将微电子器件传送到处理室和从处理室传送微电子器件的方法公开(公告)号：US06251195B1
公开(公告)日：2001-06-26
申请号：US09351939
申请日：1999-07-12
IPC分类号： B08B100
CPC分类号： H01L21/67748 , H01L21/67028
摘要： An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level. The new wafer is then processed, and the above steps are repeated to remove the wafer once processing has finished.
摘要翻译： 一种装置，具有用于在真空条件下处理半导体晶片的处理室，该条件能够在基本上等于相邻环境的压力的条件下从处理室传送晶片。 在优选实施例中，处理室被加压并且用高纯度干燥气体源排出，该干燥气体源通过扩散器扩散到室中，以在晶片的处理完成之后加压处理室。 打开处理室和相邻环境之间的室平衡端口，以将室内的压力维持在或略高于相邻环境的压力，然后打开室阀。 然后可以从处理室移除晶片，并且可以插入新的晶片。 然后通过关闭室阀和均衡端口来密封室，并且处理室内的气氛被抽空到期望的水平。 然后处理新的晶片，一旦处理完成，就重复上述步骤以移除晶片。
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公开(公告)号：US5810942A
公开(公告)日：1998-09-22
申请号：US712342
申请日：1996-09-11
CPC分类号： H01L21/67028 , B08B15/023 , B24C1/003 , B24C3/322 , B24C9/003
摘要： An aerosol cleaning apparatus and a method of treating a substrate within such an apparatus prevent contaminant recirculation by controlling the post-impingement exhaust flow through control of the aerodynamic behavior of the contaminant laden exhaust stream. By the present invention, the post-impingement exhaust flow is divided into two streams. A first stream is the main stream flowing initially over the contaminated side of the wafer and carrying most of the suspended contaminants into the exhaust. The second stream flows initially over the cleaned side of the wafer and eventually into the exhaust stream. A flow separator is provided for dividing the post-impingement aerosol spray into plural flow streams. Additionally, the aerosol chamber can advantageously include a shroud positioned within the aerosol chamber just to the side of the nozzle but further away from the exhaust than the nozzle for restricting flow from the second post-impingement stream around the nozzle and into the first post-impingement stream. In accordance with a preferred embodiment, the apparatus is designed for cleaning the surface of a semiconductor wafer by impinging the surface with a cryogenic aerosol spray.
摘要翻译： 气溶胶清洁装置和在这种装置内处理基板的方法通过控制负载污染物排气流的空气动力学行为来控制后冲击排气流来防止污染物再循环。 通过本发明，后冲击排气流被分成两股。 第一流是最初在晶片的污染侧流动的主流，并将大部分悬浮的污染物携带到排气中。 第二流最初流过清洁的晶片侧并最终流入排气流中。 提供流动分离器用于将后冲击气溶胶喷雾分成多个流动流。 此外，气溶胶室可以有利地包括位于喷雾室内的护罩，其刚好在喷嘴的侧面，但是比喷嘴更远离排气口，用于限制从喷嘴周围的第二后冲击流流入第一后冲击流， 冲击流。 根据优选实施例，该设备被设计用于通过用低温气溶胶喷雾冲击该表面来清洁半导体晶片的表面。
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8.发明申请WET PROCESSING OF MICROELECTRONIC SUBSTRATES WITH CONTROLLED MIXING OF FLUIDS PROXIMAL TO SUBSTRATE SURFACES 审中-公开具有控制流体混合的微电子基底的湿处理以接地表面公开(公告)号：US20110259376A1
公开(公告)日：2011-10-27
申请号：US13083948
申请日：2011-04-11
IPC分类号： B08B3/00
CPC分类号： H01L21/6708 , H01L21/67051
摘要： The present invention provides methods and apparatuses for controlling the transition between first and second treatment fluids during processing of microelectronic devices using spray processor tools
摘要翻译： 本发明提供用于在使用喷雾处理器工具处理微电子装置的过程中控制第一和第二处理流体之间的转变的方法和装置
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9.发明授权Edge gripping device for handling a set of semiconductor wafers in an immersion processing system 失效用于在浸没处理系统中处理一组半导体晶片的边缘夹持装置公开(公告)号：US06845779B2
公开(公告)日：2005-01-25
申请号：US10292807
申请日：2002-11-11
IPC分类号： H01L21/683 , H01L21/00 , H01L21/304 , H01L21/673 , B08B9/20 , B65D85/30
CPC分类号： H01L21/67313 , H01L21/67057 , H01L21/67086 , Y10S134/902
摘要： A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.
摘要翻译： 一种微电子衬底处理装置，包括彼此间隔开的第一和第二支撑结构，所述第一支撑结构具有限定一系列沿所述第一支撑结构的长度延伸的一系列上槽口的一系列上齿，以及限定一系列的一系列下齿 下槽口沿着第一支撑结构的长度延伸，每个上槽口和下槽口朝向第二支撑结构开口，其中上下槽口彼此偏移预定的偏移距离，使得微电子的边缘 当支撑在第一和第二支撑结构之间时，装置将在第一支撑结构的上部和下部凹口内不同地配合。
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10.发明授权Method for etching high-k films in solutions comprising dilute fluoride species 失效用于在包含稀氟物质的溶液中蚀刻高k膜的方法公开(公告)号：US06835667B2
公开(公告)日：2004-12-28
申请号：US10172795
申请日：2002-06-14
IPC分类号： H01L21461
CPC分类号： H01L21/02236 , H01L21/02252 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/31111 , H01L21/31691
摘要： A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).
摘要翻译： 公开了比共存的SiO 2，多晶硅，硅和/或其它膜更快地蚀刻高介电常数（高k）膜（例如ZrzSiyOx，HfzSiyOx，ZrzHfyOx，HfzAlyOx和ZrzAlyOx）的方法。 该方法包括使膜与包含含氟化物物质的水溶液以足够稀的浓度接触以实现所需的高k膜的选择性蚀刻。 蚀刻溶液优选在环境温度以上使用以进一步提高高k膜相对于共存的SiO 2和/或其它膜的蚀刻选择性。 溶液的蚀刻速率也可以通过例如通过向溶液中添加其它酸或碱（例如HCl或NH 4 OH）来控制蚀刻溶液的pH来调节。
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