公开(公告)号：US10008410B2

公开(公告)日：2018-06-26

申请号：US15464532

申请日：2017-03-21

申请人： Kwang Chul Park ,  Ji Woon Im ,  Dai Hong Kim ,  Il Woo Kim ,  Hyun Seok Lim

发明人： Kwang Chul Park ,  Ji Woon Im ,  Dai Hong Kim ,  Il Woo Kim ,  Hyun Seok Lim

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  C23C16/48 ,  C23C16/50 ,  C23C16/54

CPC分类号： H01L21/76825 ,  C23C16/45523 ,  C23C16/482 ,  C23C16/50 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/40117

摘要： A deposition apparatus includes a chamber, a plate in the chamber and configured support a substrate, a deposition unit configured to perform a deposition process in-situ in the chamber, and a UV annealing unit configured to perform a first ultraviolet (UV) and a second ultraviolet (UV) annealing process in-situ in the chamber. The deposition process may include sequentially depositing a first sacrificial layer, a first oxide layer, a second sacrificial layer and a second oxide layer on the substrate. The first UV annealing process may be performed on the first oxide layer after the first oxide layer is deposited. The second UV annealing process may be different from the first UV annealing process and may be performed on the second oxide layer after the second oxide layer is deposited.

公开(公告)号：US20180114722A1

公开(公告)日：2018-04-26

申请号：US15464532

申请日：2017-03-21

申请人： Kwang Chul PARK ,  Ji Woon Im ,  Dai Hong Kim ,  ll Woo Kim ,  Hyun Seok Lim

发明人： Kwang Chul PARK ,  Ji Woon Im ,  Dai Hong Kim ,  ll Woo Kim ,  Hyun Seok Lim

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  C23C16/48 ,  C23C16/50 ,  C23C16/54

CPC分类号： H01L21/76825 ,  C23C16/45523 ,  C23C16/482 ,  C23C16/50 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02348 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/1157 ,  H01L27/11582

摘要： A deposition apparatus includes a chamber, a plate in the chamber and configured support a substrate, a deposition unit configured to perform a deposition process in-situ in the chamber, and a UV annealing unit configured to perform a first ultraviolet (UV) and a second ultraviolet (UV) annealing process in-situ in the chamber. The deposition process may include sequentially depositing a first sacrificial layer, a first oxide layer, a second sacrificial layer and a second oxide layer on the substrate. The first UV annealing process may be performed on the first oxide layer after the first oxide layer is deposited. The second UV annealing process may be different from the first UV annealing process and may be performed on the second oxide layer after the second oxide layer is deposited.