摘要:
Provided is a system and method for performing an auto scroll. The system for performing the auto scroll may include an auto scroll determination unit to determine whether to perform the auto scroll on a page, an auto scroll performing unit to perform the auto scroll on the page so that a main text of the page may be obtained with focus, and a page providing unit to output the auto scrolled page. According to exemplary embodiments of the present invention, even though a user does not manually scroll to data of the page to be viewed, the data of the page may automatically be scrolled so that the data may be obtained with focus.
摘要:
FIG. 1 is a perspective view of the baby bidet showing my new design; FIG. 2 is a front view thereof; FIG. 3 is a left side view thereof; FIG. 4 is a right side view thereof; FIG. 5 is a top plan view thereof; FIG. 6 is a bottom plan view thereof; and, FIG. 7 is a rear view. The broken lines in the drawings depict environmental subject matter of the baby bidet only and form no part of the claimed design.
摘要:
The present invention relates to a control device for a doubly-fed induction generator in which a feedback linearization method is enabled and further provides a control device for a doubly-fed induction generator in which a feedback linearization method is embedded, characterized in that the control device divides and measures positive sequency components and negative sequency components from stator voltage and current, rotor voltage and current, and signals of stator magnetic flux and rotor magnetic flux of the doubly-fed induction generator.
摘要:
A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.
摘要:
The present invention relates to a stage with a displacement measuring means capable of measuring a displacement, and more particularly, to a stage provided with a displacement magnification means capable of magnifying a displacement so as to precisely measure a minute displacement on the order of nanometers. A stage according to an aspect of the present invention comprises a fixed base, a movable table, a first elastic support, a first actuator, a first displacement converting means and a first displacement measuring means. The movable table is installed to be movable with respect to the fixed base. The first elastic support supports the movable table with respect to the fixed base, and the first actuator generates a displacement of the movable table in one direction. The first displacement converting means is connected to the movable table and the fixed base so as to convert the unidirectional displacement of the movable table into a rotational displacement about a point thereof connected to the movable table. The first displacement measuring means measures the displacement converted by the first displacement converting means. The present invention provides a stage provided with a device capable of magnifying and measuring a displacement generated in a feeding table, thereby implementing a high measurement precision using a measurement device with a low precision.
摘要:
A stretchable electronic circuit that includes a stretchable base substrate having a plurality of stretchable conductors formed onto a surface thereof, with both the stretchable base substrate and conductors being bendable together about two orthogonal axes. The stretchable circuit also includes a stretchable sensor layer attached to the base substrate with a cavity formed therein which has a contact point exposing one of the plurality of stretchable conductors. The stretchable electronic circuit further includes a surface mount device (SMD) package with a conductor contact protrusion installed into the cavity, and wherein a substantially constant electrical connection is established between the conductor contact protrusion and the stretchable conductor at the contact point by tensile forces interacting between the stretchable base substrate and the stretchable sensor layer.
摘要:
Disclosed are a mask mold, a manufacturing method thereof, and a method for forming a large-sized micro pattern using the manufactured mask mold, in which the size of a nano-level micro pattern can be enlarged using a simple method with low cost and interference and stitching errors between cells forming a large area can be minimized. The method for manufacturing the mask mold includes the operations of coating resist on a mask or a plurality of small molds having an engraved micro pattern, pressing the small molds to imprint the micro pattern on the resist, curing the resist, and releasing the small molds from the resist.
摘要:
The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same.
摘要:
The present invention relates to a control device for a doubly-fed induction generator in which a feedback linearization method is enabled and further provides a control device for a doubly-fed induction generator in which a feedback linearization method is embedded, characterized in that the control device divides and measures positive sequency components and negative sequency components from stator voltage and current, rotor voltage and current, and signals of stator magnetic flux and rotor magnetic flux of the doubly-fed induction generator.
摘要:
A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the active region along a second direction orthogonal to the first direction; a second recess formed in the device isolation structure to receive a given portion of the gate line into the second recess; a first junction region formed in the active region beneath the first recess and on a first side of the gate line; and a second junction region formed on a second side of the gate line and above the first junction region, wherein the first and second junction regions define a vertical-type channel that extends along lateral and vertical directions.