公开(公告)号：US20080299702A1

公开(公告)日：2008-12-04

申请号：US12110744

申请日：2008-04-28

申请人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

申请人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20080283831A1

公开(公告)日：2008-11-20

申请号：US11960567

申请日：2007-12-19

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20100051942A1

公开(公告)日：2010-03-04

申请号：US12615315

申请日：2009-11-10

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20130221343A1

公开(公告)日：2013-08-29

申请号：US13588462

申请日：2012-08-17

申请人： Kyoung-seok SON ,  Myung-kwan RYU ,  Tae-sang KIM ,  Hyun-suk KIM ,  Joon-seok PARK ,  Jong-baek SEON ,  Sang-yoon LEE

发明人： Kyoung-seok SON ,  Myung-kwan RYU ,  Tae-sang KIM ,  Hyun-suk KIM ,  Joon-seok PARK ,  Jong-baek SEON ,  Sang-yoon LEE

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/7869

摘要： A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

摘要翻译： 晶体管可以包括在包括氮氧化物的沟道层和电连接到沟道层的电极之间的空穴阻挡层。 空穴阻挡层可以设置在沟道层与源电极和漏电极中的至少一个之间的区域中。 沟道层可以包括例如氮氧化锌（ZnON）。 空穴阻挡层的价带最大能级可以低于沟道层的价带最大能级。

公开(公告)号：US20120126223A1

公开(公告)日：2012-05-24

申请号：US13156906

申请日：2011-06-09

申请人： Wan-joo MAENG ,  Myung-kwan RYU ,  Tae-sang KIM ,  Joon-seok PARK

发明人： Wan-joo MAENG ,  Myung-kwan RYU ,  Tae-sang KIM ,  Joon-seok PARK

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869

摘要： An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.

摘要翻译： 氧化物晶体管包括：由氧化物半导体形成的沟道层; 与所述沟道层的第一端部接触的源电极; 漏极，与所述沟道层的第二端部接触; 对应于沟道层的栅极; 以及设置在沟道层和栅极之间的栅极绝缘层。 氧化物半导体包括铪 - 铟 - 锌 - 氧化物（HfInZnO）。 沟道层的背沟道区域的导电率低于沟道层的前沟道区域的导电率。

公开(公告)号：US20080007902A1

公开(公告)日：2008-01-10

申请号：US11626060

申请日：2007-01-23

申请人： Tae-sang KIM

发明人： Tae-sang KIM

IPC分类号： G06F1/16

CPC分类号： G06F1/1662 ,  G06F1/1616 ,  G06F1/1656

摘要： An electronic device including a keyboard, and a printed circuit board provided in a rear portion of the keyboard. The electronic device includes a housing to support the keyboard and the printed circuit board, and a coupling unit to couple the keyboard and the printed circuit board, the coupling unit including a first coupling member coupled to the keyboard to be distanced from an electronic component mounted on the printed circuit board when the keyboard and the housing are coupled, a middle rod including a first coupling part provided at a first side thereof to be selectively coupled to the first coupling means, and a second coupling part provided at a second side thereof, and a second coupling member coupled with the second coupling part of the middle rod to couple the keyboard and the housing.

摘要翻译： 一种包括键盘的电子设备和设置在键盘后部的印刷电路板。 电子设备包括用于支撑键盘和印刷电路板的壳体，以及耦合单元以耦合键盘和印刷电路板，耦合单元包括耦合到键盘的第一耦合构件，以与安装的电子部件 在键盘和壳体联接时在印刷电路板上的中间杆，包括设置在其第一侧的第一联接部分以选择性地联接到第一联接装置的中间杆，以及设置在其第二侧的第二联接部， 以及与中间杆的第二联接部分联接以耦合键盘和壳体的第二联接构件。

公开(公告)号：US20080198542A1

公开(公告)日：2008-08-21

申请号：US11862591

申请日：2007-09-27

申请人： Tae-sang KIM

发明人： Tae-sang KIM

IPC分类号： H05K7/00

CPC分类号： G06F1/1679 ,  G06F1/1616

摘要： An information processing apparatus includes a body, a display that is coupled to the body in such a manner that the display rotates between a close position at which the display is folded on the body and an open position at which the display is unfolded against the body, a coupling part having an engaging member that projects from a plate plane of one of the body and the display and is checked so as not to project from the plate plane, and couples/decouples the display to/from the body at the close position, and a projection checking part that interlocks with the engaging member in such a manner that the engaging member does not project from the plate plane at the open position.

摘要翻译： 信息处理设备包括主体，显示器，其以使得显示器在显示器折叠在身体上的关闭位置和显示器展开在打开位置的打开位置之间旋转的方式联接到主体 ，具有接合构件的联接部件，所述接合构件从所述主体和所述显示器中的一个的板平面突出并且被检查为不从所述板平面突出，并且在所述关闭位置处将所述显示器与所述主体耦合/解耦 以及与接合构件互锁的突起检查部，使得接合构件在打开位置不从板平面突出。