公开(公告)号：US20090321738A1

公开(公告)日：2009-12-31

申请号：US12285448

申请日：2008-10-06

申请人： Kyoungkook Kim ,  Youngsoo Park ,  Jaechul Park

发明人： Kyoungkook Kim ,  Youngsoo Park ,  Jaechul Park

IPC分类号： H01L33/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/7869 ,  H01L33/18 ,  H01L33/28

摘要： Provided may be a display apparatus that uses oxide diodes having a nano rod structure, for example, nano-rod diodes formed of a ZnO group material. The display apparatus may include a substrate, a thin film transistor layer on the substrate, and a light emitting layer on the thin film transistor layer, wherein the light emitting layer may include a plug metal layer on the thin film transistor layer, a plurality of nano-rod diodes vertically formed on the plug metal layer, and a transparent electrode on the nano-rod diodes.

摘要翻译： 可以使用具有纳米棒结构的氧化物二极管的显示装置，例如由ZnO基材料形成的纳米棒状二极管。 显示装置可以包括衬底，衬底上的薄膜晶体管层和薄膜晶体管层上的发光层，其中发光层可以在薄膜晶体管层上包括插入金属层，多个 垂直形成在插塞金属层上的纳米棒二极管和纳米棒二极管上的透明电极。

公开(公告)号：US08895955B2

公开(公告)日：2014-11-25

申请号：US12285448

申请日：2008-10-06

申请人： Kyoungkook Kim ,  Youngsoo Park ,  Jaechul Park

发明人： Kyoungkook Kim ,  Youngsoo Park ,  Jaechul Park

IPC分类号： H01L29/06 ,  B82Y10/00 ,  H01L33/18 ,  H01L29/786 ,  H01L27/12 ,  H01L33/28

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/7869 ,  H01L33/18 ,  H01L33/28

摘要： Provided may be a display apparatus that uses oxide diodes having a nano rod structure, for example, nano-rod diodes formed of a ZnO group material. The display apparatus may include a substrate, a thin film transistor layer on the substrate, and a light emitting layer on the thin film transistor layer, wherein the light emitting layer may include a plug metal layer on the thin film transistor layer, a plurality of nano-rod diodes vertically formed on the plug metal layer, and a transparent electrode on the nano-rod diodes.

摘要翻译： 可以使用具有纳米棒结构的氧化物二极管的显示装置，例如由ZnO基材料形成的纳米棒状二极管。 显示装置可以包括衬底，衬底上的薄膜晶体管层和薄膜晶体管层上的发光层，其中发光层可以在薄膜晶体管层上包括插入金属层，多个 垂直形成在插塞金属层上的纳米棒二极管和纳米棒二极管上的透明电极。

公开(公告)号：US08030670B2

公开(公告)日：2011-10-04

申请号：US12314738

申请日：2008-12-16

申请人： Kyoungkook Kim ,  Youngsoo Park

发明人： Kyoungkook Kim ,  Youngsoo Park

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Provided is a multi-chip package light emitting diode (LED) device including a plurality of LED chips within a single package. The LED device may include a base substrate, a multi-chip package for a LED on the base substrate, and a light radiator surrounding the multi-chip package and radiating light emitted by the multi-chip package for a LED, wherein the multi-chip package for a LED may include a plurality of LED chips on a single wafer substrate.

摘要翻译： 提供了在单个封装内包括多个LED芯片的多芯片封装发光二极管（LED）装置。 LED装置可以包括基底基板，用于基底基板上的LED的多芯片封装，以及围绕多芯片封装的散热器，以及辐射由用于LED的多芯片封装发射的光，其中， 用于LED的芯片封装可以在单个晶片衬底上包括多个LED芯片。

公开(公告)号：US20090321776A1

公开(公告)日：2009-12-31

申请号：US12314738

申请日：2008-12-16

申请人： Kyoungkook Kim ,  Youngsoo Park

发明人： Kyoungkook Kim ,  Youngsoo Park

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Provided is a multi-chip package light emitting diode (LED) device including a plurality of LED chips within a single package. The LED device may include a base substrate, a multi-chip package for a LED on the base substrate, and a light radiator surrounding the multi-chip package and radiating light emitted by the multi-chip package for a LED, wherein the multi-chip package for a LED may include a plurality of LED chips on a single wafer substrate.

摘要翻译： 提供了在单个封装内包括多个LED芯片的多芯片封装发光二极管（LED）装置。 LED装置可以包括基底基板，用于基底基板上的LED的多芯片封装，以及围绕多芯片封装的散热器，以及辐射由用于LED的多芯片封装发射的光，其中， 用于LED的芯片封装可以在单个晶片衬底上包括多个LED芯片。

公开(公告)号：US08234438B2

公开(公告)日：2012-07-31

申请号：US12457464

申请日：2009-06-11

申请人： Seungeon Ahn ,  Keewon Kwon ,  Jaechul Park ,  Youngsoo Park ,  Myoungjae Lee

发明人： Seungeon Ahn ,  Keewon Kwon ,  Jaechul Park ,  Youngsoo Park ,  Myoungjae Lee

IPC分类号： G06F12/00

CPC分类号： G11C8/06 ,  G06F12/0238 ,  G06F2212/7201 ,  G11C13/0069

摘要： Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.

摘要翻译： 示例性实施例提供了一种操作非易失性存储器的方法，其中非易失性存储器可以仅在编程操作期间从第一状态改变到第二状态，并且可以不从第二状态改变到第一状态。

公开(公告)号：US20110089998A1

公开(公告)日：2011-04-21

申请号：US12926475

申请日：2010-11-19

申请人： Huaxiang Yin ,  Youngsoo Park ,  Jaechul Park ,  Sunil Kim

发明人： Huaxiang Yin ,  Youngsoo Park ,  Jaechul Park ,  Sunil Kim

IPC分类号： G05F3/02

CPC分类号： H03K19/01714

摘要： An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.

公开(公告)号：US20110116336A1

公开(公告)日：2011-05-19

申请号：US12929354

申请日：2011-01-19

申请人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

发明人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

IPC分类号： G11C8/10

CPC分类号： G11C5/04 ,  G11C5/02 ,  G11C11/16 ,  G11C11/1653 ,  G11C2213/71

摘要： A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.

公开(公告)号：US20110116297A1

公开(公告)日：2011-05-19

申请号：US12929355

申请日：2011-01-19

申请人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

发明人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

IPC分类号： G11C5/02

CPC分类号： G11C5/04 ,  G11C5/02 ,  G11C11/16 ,  G11C11/1653 ,  G11C2213/71

摘要： A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.

公开(公告)号：US20100085821A1

公开(公告)日：2010-04-08

申请号：US12457464

申请日：2009-06-11

申请人： Seungeon Ahn ,  Keewon Kwon ,  Jaechul Park ,  Youngsoo Park ,  Myoungjae Lee

发明人： Seungeon Ahn ,  Keewon Kwon ,  Jaechul Park ,  Youngsoo Park ,  Myoungjae Lee

IPC分类号： G11C7/00 ,  G11C11/00

CPC分类号： G11C8/06 ,  G06F12/0238 ,  G06F2212/7201 ,  G11C13/0069

摘要： Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.

摘要翻译： 示例性实施例提供了一种操作非易失性存储器的方法，其中非易失性存储器可以仅在编程操作期间从第一状态改变到第二状态，并且可以不从第二状态改变到第一状态。

公开(公告)号：US08526263B2

公开(公告)日：2013-09-03

申请号：US12929355

申请日：2011-01-19

申请人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

发明人： Jaechul Park ,  Keewon Kwon ,  Youngsoo Park ,  Seunghoon Lee ,  Seungeon Ahn

IPC分类号： G11C8/00

CPC分类号： G11C5/04 ,  G11C5/02 ,  G11C11/16 ,  G11C11/1653 ,  G11C2213/71

摘要： A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.