摘要:
A bulk nanocomposite thermoelectric material including: a plurality of grains of a thermoelectric material; and a metal nanolayer on a boundary of the plurality of grains, wherein the metal nanolayer is crystalline, and a glass transition temperature and a crystallization temperature of the nanometal are lower than a melting point of the thermoelectric material.
摘要:
A thermoelectric composite including a thermoelectric material matrix, a plurality of ceramic nanoparticles, and a bipolar dispersant, wherein the bipolar dispersant bonds the ceramic nanoparticles to the thermoelectric material matrix.
摘要:
A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.
摘要:
A nanocomposite thermoelectric material, a thermoelectric element including the nanocomposite thermoelectric material, and a thermoelectric module including the thermoelectric element are disclosed herein. The nanocomposite thermoelectric material includes highly electrically conductive nano metallic particles that are uniformly dispersed in a thermoelectric material matrix. Thus, the nanocomposite thermoelectric material has high thermoelectric performance, and thus, may be used in a wide range of thermoelectric elements and thermoelectric modules.
摘要:
A thermoelectric nano-composite including a thermoelectric matrix; a nano-metal particle; and a nano-thermoelectric material represented by Formula 1: AxMyBz Formula 1 wherein A includes at least one element of indium, bismuth, or antimony, B includes at least one element of tellurium or selenium (Se), M includes at least one element of gallium, thallium, lead, rubidium, sodium, or lithium, x is greater than 0 and less than or equal to about 4, y is greater than 0 and less than or equal to about 4, and z is greater than 0 and less than or equal to about 3.
摘要:
According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal.
摘要:
A switching circuit, a charge sense amplifier, and a photon counting device are provided. The switching circuit configured to close and open a connection between a first terminal and a second terminal of a predetermined circuit element, includes: a first transistor comprising a source connected to the first terminal, a drain connected to the second terminal, and a gate; a second transistor comprising a drain, a source, and a gate connected to the drain of the second transistor; a current source configured to supply a current flowing through the drain and the source of the second transistor, to generate a gate voltage of the gate of the second transistor; and a multiplexer configured to receive the gate voltage, a reference voltage, and a control signal, and selectively apply the gate voltage or the reference voltage to the gate of the first transistor based on the control signal.
摘要:
A method of preparing oxide-based nanophosphor includes preparing a reaction mixture by dissolving reaction mixture components including a metal halide, an oleate, and a precipitation auxiliary compound in a solvent; irradiating the reaction mixture with microwave radiation to precipitate an oxide-based nanophosphor precursor; and sintering the oxide-based nanophosphor precursor.