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公开(公告)号:US20180072571A1
公开(公告)日:2018-03-15
申请号:US15661412
申请日:2017-07-27
申请人: Air Liquide Advanced Materials Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Air Liquide Electronics U.S. LP , American Air Liquide, Inc. , Air Liquide Advanced Materials LLC
发明人: Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON
IPC分类号: C01B21/087 , C04B35/589 , C04B35/597 , C04B35/14 , C09D1/00 , C01B21/082 , B05D1/02 , B05D1/00 , B05D1/18 , C23C16/24
摘要: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
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公开(公告)号:US20210395890A1
公开(公告)日:2021-12-23
申请号:US17409229
申请日:2021-08-23
发明人: Jean-Marc GIRARD , Peng ZHANG , Antonio SANCHEZ , Manish KHANDELWAL , Gennadiy ITOV , Reno PESARESI , Grigory NIKIFOROV , David ORBAN
IPC分类号: C23C16/455 , H01L21/02 , C01B21/088 , C23C16/515 , C23C16/40 , C23C16/34 , C23C16/30 , C01B21/087 , C07F7/02
摘要: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.
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公开(公告)号:US20210102092A1
公开(公告)日:2021-04-08
申请号:US16971873
申请日:2019-02-21
申请人: American Air Liquide, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人: Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON , Grigory NIKIFOROV
IPC分类号: C09D183/16 , C08G77/62 , C08J5/18 , C08F4/72
摘要: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2−)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
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公开(公告)号:US20150376211A1
公开(公告)日:2015-12-31
申请号:US14738039
申请日:2015-06-12
发明人: Jean-Marc GIRARD , Peng ZHANG , Antonio SANCHEZ , Manish KHANDELWAL , Gennadiy ITOV , Reno PESARESI
IPC分类号: C07F7/02 , C23C16/455 , C23C16/50 , C01B21/088 , C01B21/087
CPC分类号: C07F7/025 , C01B21/087 , C01B21/088 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/45553 , C23C16/515
摘要: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
摘要翻译: 公开了单取代的TSA前体含Si成膜组合物。 前体具有下式:(SiH 3)2 N-SiH 2 -X,其中X选自卤素原子; 异氰酸酯基; 氨基; 含N的C 4 -C 10饱和或不饱和杂环; 或烷氧基。 还公开了使用公开的单取代TSA前体形成含Si膜的方法。
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公开(公告)号:US20210225635A1
公开(公告)日:2021-07-22
申请号:US17197895
申请日:2021-03-10
发明人: Jean-Marc GIRARD , Peng ZHANG , Antonio SANCHEZ , Manish KHANDELWAL , Gennadiy ITOV , Reno PESARESI
IPC分类号: H01L21/02 , C07F7/02 , C01B21/087 , C01B21/088 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/515
摘要: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.
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