公开(公告)号：US20180072571A1

公开(公告)日：2018-03-15

申请号：US15661412

申请日：2017-07-27

申请人： Air Liquide Advanced Materials Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Electronics U.S. LP ,  American Air Liquide, Inc. ,  Air Liquide Advanced Materials LLC

发明人： Antonio SANCHEZ ,  Gennadiy ITOV ,  Manish KHANDELWAL ,  Cole RITTER ,  Peng ZHANG ,  Jean-Marc GIRARD ,  Zhiwen WAN ,  Glenn KUCHENBEISER ,  David ORBAN ,  Sean KERRIGAN ,  Reno PESARESI ,  Matthew Damien STEPHENS ,  Yang WANG ,  Guillaume HUSSON

IPC分类号： C01B21/087 ,  C04B35/589 ,  C04B35/597 ,  C04B35/14 ,  C09D1/00 ,  C01B21/082 ,  B05D1/02 ,  B05D1/00 ,  B05D1/18 ,  C23C16/24

摘要： Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

公开(公告)号：US20210198429A1

公开(公告)日：2021-07-01

申请号：US16731728

申请日：2019-12-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin LIU ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Fan QIN ,  Gennadiy ITOV ,  Fabrizio MARCHEGIANI ,  Thomas J. LARRABEE

IPC分类号： C08G77/12 ,  B05D1/00 ,  B05D3/02 ,  C08G77/08 ,  C08G77/26

摘要： Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

公开(公告)号：US20230095074A1

公开(公告)日：2023-03-30

申请号：US17977619

申请日：2022-10-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin LIU ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Fan QIN ,  Gennadiy ITOV ,  Fabrizio MARCHEGIANI ,  Thomas J. LARRABEE ,  Venkateswara R. PALLEM

IPC分类号： C09D183/14

摘要： A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

公开(公告)号：US20210102092A1

公开(公告)日：2021-04-08

申请号：US16971873

申请日：2019-02-21

申请人： American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Antonio SANCHEZ ,  Gennadiy ITOV ,  Manish KHANDELWAL ,  Cole RITTER ,  Peng ZHANG ,  Jean-Marc GIRARD ,  Zhiwen WAN ,  Glenn KUCHENBEISER ,  David ORBAN ,  Sean KERRIGAN ,  Reno PESARESI ,  Matthew Damien STEPHENS ,  Yang WANG ,  Guillaume HUSSON ,  Grigory NIKIFOROV

IPC分类号： C09D183/16 ,  C08G77/62 ,  C08J5/18 ,  C08F4/72

摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2−)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

公开(公告)号：US20210395890A1

公开(公告)日：2021-12-23

申请号：US17409229

申请日：2021-08-23

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennadiy ITOV ,  Reno PESARESI ,  Grigory NIKIFOROV ,  David ORBAN

IPC分类号： C23C16/455 ,  H01L21/02 ,  C01B21/088 ,  C23C16/515 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C01B21/087 ,  C07F7/02

摘要： Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

公开(公告)号：US20150376211A1

公开(公告)日：2015-12-31

申请号：US14738039

申请日：2015-06-12

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennadiy ITOV ,  Reno PESARESI

IPC分类号： C07F7/02 ,  C23C16/455 ,  C23C16/50 ,  C01B21/088 ,  C01B21/087

CPC分类号： C07F7/025 ,  C01B21/087 ,  C01B21/088 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/515

摘要： Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

摘要翻译： 公开了单取代的TSA前体含Si成膜组合物。 前体具有下式：（SiH 3）2 N-SiH 2 -X，其中X选自卤素原子; 异氰酸酯基; 氨基; 含N的C 4 -C 10饱和或不饱和杂环; 或烷氧基。 还公开了使用公开的单取代TSA前体形成含Si膜的方法。

公开(公告)号：US20210225635A1

公开(公告)日：2021-07-22

申请号：US17197895

申请日：2021-03-10

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennadiy ITOV ,  Reno PESARESI

IPC分类号： H01L21/02 ,  C07F7/02 ,  C01B21/087 ,  C01B21/088 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/515

摘要： Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

公开(公告)号：US20170323783A1

公开(公告)日：2017-11-09

申请号：US15661576

申请日：2017-07-27

申请人： Air Liquide Advanced Materials, Inc. ,  L'Air Liquide, Société Anonyme pour l;etude et l'Exploitation des Procédés Georges Claude

发明人： Antonio SANCHEZ ,  Gennadiy ITOV ,  Reno PESARESI ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Manish KHANDELWAL

IPC分类号： H01L21/02

CPC分类号： H01L21/02211 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed are Si—C free and volatile silazane precursors for high purity thin film deposition.

公开(公告)号：US20210087406A1

公开(公告)日：2021-03-25

申请号：US16971869

申请日：2019-02-21

申请人： Antonio SANCHEZ ,  Gennadiy ITOV ,  Manish KHANDELWAL ,  Cole RITTER ,  Peng ZHANG ,  Jean-Marc GIRARD ,  Zhiwen WAN ,  Glenn KUCHENBEISER ,  David ORBAN ,  Sean KERRIGAN ,  Reno PESARESI ,  Matthew Damien STEPHENS ,  Yang WANG ,  Guillaume HUSSON ,  Grigory NIKIFOROV ,  L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Antonio SANCHEZ ,  Gennadiy ITOV ,  Manish KHANDELWAL ,  Cole RITTER ,  Peng ZHANG ,  Jean-Marc GIRARD ,  Zhiwen WAN ,  Glenn KUCHENBEISER ,  David ORBAN ,  Sean KERRIGAN ,  Reno PESARESI ,  Matthew Damien STEPHENS ,  Yang WANG ,  Guillaume HUSSON ,  Grigory NIKIFOROV

IPC分类号： C09D1/00 ,  C09D7/63 ,  C01B21/087 ,  C01B33/12 ,  C01B21/068 ,  C23C18/12 ,  B05D1/00 ,  B05D3/02

摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

公开(公告)号：US20190040279A1

公开(公告)日：2019-02-07

申请号：US16087464

申请日：2017-03-23

申请人： American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude

发明人： Manish KHANDELWAL ,  Sean KERRIGAN ,  Jean-Marc GIRARD ,  Antonio SANCHEZ ,  Peng ZHANG ,  Yang WANG

IPC分类号： C09D183/16 ,  C08G77/62 ,  C07F7/10

摘要： Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary precursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.