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公开(公告)号：US20210102092A1
公开(公告)日：2021-04-08
申请号：US16971873
申请日：2019-02-21
申请人： American Air Liquide, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON , Grigory NIKIFOROV
IPC分类号： C09D183/16 , C08G77/62 , C08J5/18 , C08F4/72
摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2−)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
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公开(公告)号：US20200223703A1
公开(公告)日：2020-07-16
申请号：US16827186
申请日：2020-03-23
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Grigory NIKIFOROV , Guillaume HUSSON , Gennadiy ITOV , Yang WANG
摘要： Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
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3.发明申请公开(公告)号：US20190330076A1
公开(公告)日：2019-10-31
申请号：US15966799
申请日：2018-04-30
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin LIU , Feng LI , Zhiwen WAN , Claudia FAFARD , Stefan WIESE , Guillaume HUSSON , Grigory NIKIFOROV , Bin SUI , Jean-Marc Girard
IPC分类号： C01G41/04
摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.
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4.发明申请公开(公告)号：US20200277315A1
公开(公告)日：2020-09-03
申请号：US16871862
申请日：2020-05-11
IPC分类号： C07F7/28 , C23C16/455 , C23C16/14 , C23C16/34
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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5.发明公开公开(公告)号：US20230183281A1
公开(公告)日：2023-06-15
申请号：US17546169
申请日：2021-12-09
发明人： Grigory NIKIFOROV , Nicolas BLASCO
IPC分类号： C07F15/00
CPC分类号： C07F15/0093
摘要： A method for synthesizing Pt(PF3)4 (CAS #19529-53-4) comprises dissolving a platinum compound having a general formula, Pt(Hal)2(PF3)x, in an anhydrous solvent forming a Pt(Hal)2(PF3)x solution, wherein Hal=F, Cl, Br or x=1, 2, adding a metal powder and excess amount of PF3 into the Pt(Hal)2(PF3)x solution, and forming Pt(PF3)4 through a reaction between Pt(Hal)2(PF3)x, PF3 and the metal powder under a reaction condition. The method further comprises synthesizing Pt(Hal)2(PF3)x through the steps of dispersing a platinum precursor having a general formula, Pt(Hal)2, into the anhydrous solvent forming a suspension of Pt(Hal)2, wherein Hal=F, Cl, Br or I, introducing PF3 into the suspension of Pt(Hal)2, and forming the solution of the platinum compound Pt(Hal)2(PF3)x in the anhydrous solvent through a reaction of PF3 and Pt(Hal)2.
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公开(公告)号：US20210395890A1
公开(公告)日：2021-12-23
申请号：US17409229
申请日：2021-08-23
发明人： Jean-Marc GIRARD , Peng ZHANG , Antonio SANCHEZ , Manish KHANDELWAL , Gennadiy ITOV , Reno PESARESI , Grigory NIKIFOROV , David ORBAN
IPC分类号： C23C16/455 , H01L21/02 , C01B21/088 , C23C16/515 , C23C16/40 , C23C16/34 , C23C16/30 , C01B21/087 , C07F7/02
摘要： Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.
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公开(公告)号：US20230272524A1
公开(公告)日：2023-08-31
申请号：US18009658
申请日：2021-06-16
发明人： Takashi TERAMOTO , Christian DUSSARRAT , Grigory NIKIFOROV , Nicolas BLASCO , Jean-Marc GIRARD , Takashi ONO , Keishi YAMAMOTO , Masato HIRAI , Sunao KAMIMURA
IPC分类号： C23C16/40 , C01F17/259 , C07F5/00 , C23C16/04 , C23C16/455
CPC分类号： C23C16/405 , C01F17/259 , C07F5/003 , C23C16/045 , C23C16/45553 , C23C16/45527 , C01P2004/03
摘要： A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.
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8.发明申请公开(公告)号：US20190161507A1
公开(公告)日：2019-05-30
申请号：US15968099
申请日：2018-05-01
IPC分类号： C07F7/28 , C23C16/14 , C23C16/455
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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9.发明申请公开(公告)号：US20200325036A1
公开(公告)日：2020-10-15
申请号：US16861275
申请日：2020-04-29
申请人： L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin LIU , Feng LI , Zhiwen WAN , Claudia FAFARD , Stefan WIESE , Guillaume HUSSON , Grigory NIKIFOROV , Bin SUI , Jean-Marc GIRARD
IPC分类号： C01G41/04
摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.
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公开(公告)号：US20210087406A1
公开(公告)日：2021-03-25
申请号：US16971869
申请日：2019-02-21
申请人： Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON , Grigory NIKIFOROV , L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON , Grigory NIKIFOROV
IPC分类号： C09D1/00 , C09D7/63 , C01B21/087 , C01B33/12 , C01B21/068 , C23C18/12 , B05D1/00 , B05D3/02
摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
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