Gas exhaust by-product measurement system

    公开(公告)号:US10302553B2

    公开(公告)日:2019-05-28

    申请号:US15691405

    申请日:2017-08-30

    Abstract: A gas exhaust by-product measurement system is provided. A gas chamber is configured to receive exhaust from the exhaust output. A light source, light detector, and at least one optical element are positioned so that a light beam from the light source is directed to the at least one optical element a plurality of times before reaching the light detector. At least one heater provides heat to the at least one optical element. A plurality of purge gas nozzles are in fluid connection with the optical cavity. A high flow line is in fluid connection between a purge gas source and the plurality of purge gas nozzles. A low flow line is in fluid connection between the purge gas source and the plurality of purge gas nozzles. At least one flow controller manages a plurality of flow rates including a high flow and a low flow.

    Substrate processing chamber including multiple gas injection points and dual injector

    公开(公告)号:US10825659B2

    公开(公告)日:2020-11-03

    申请号:US15399692

    申请日:2017-01-05

    Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

    Variable depth edge ring for etch uniformity control

    公开(公告)号:US11342163B2

    公开(公告)日:2022-05-24

    申请号:US16871829

    申请日:2020-05-11

    Abstract: A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

    Variable depth edge ring for etch uniformity control

    公开(公告)号:US10651015B2

    公开(公告)日:2020-05-12

    申请号:US15422823

    申请日:2017-02-02

    Abstract: A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

    Reference Box for Direct-Drive Radiofrequency Power Supply

    公开(公告)号:US20240404804A1

    公开(公告)日:2024-12-05

    申请号:US18689017

    申请日:2022-09-13

    Abstract: A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference box has an input connector electrically connected to a radiofrequency output coupling of the direct-drive radiofrequency power supply. A radiofrequency power meter has a radiofrequency power input electrically connected to an output connector of the reference box. The radiofrequency power meter has an input impedance and an output impedance that substantially match the reference output impedance of the reference box. A cable has a first end electrically connected to a radiofrequency power output of the radiofrequency power meter and a second end connected to a test load that has an impedance that substantially matches the reference output impedance of the reference box. A controller is connected in data communication with a data interface of the radiofrequency power meter.

    VARIABLE DEPTH EDGE RING FOR ETCH UNIFORMITY CONTROL

    公开(公告)号:US20200273671A1

    公开(公告)日:2020-08-27

    申请号:US16871829

    申请日:2020-05-11

    Abstract: A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

    SUBSTRATE PROCESSING CHAMBER INCLUDING MULTIPLE GAS INJECTION POINTS AND DUAL INJECTOR

    公开(公告)号:US20170200586A1

    公开(公告)日:2017-07-13

    申请号:US15399692

    申请日:2017-01-05

    Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

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