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    FAST-GAS SWITCHING FOR ETCHING
    1.
    发明申请
    FAST-GAS SWITCHING FOR ETCHING 审中-公开

    公开(公告)号：US20160141150A1

    公开(公告)日：2016-05-19

    申请号：US15004703

    申请日：2016-01-22

    Applicant: Lam Research Corporation

    Inventor： Saravanapriyan SRIRAMAN ,  Alexander PATERSON

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/32137 ,  H01L21/67069

    Abstract: A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first frequency, wherein flow of pulsed etch gas from the inner injection zone gas feed is ramped down to zero. The pulsed etch gas is provided from the outer injection zone gas feed at the first frequency and simultaneous with and out of phase with the pulsed etch gas from the inner injection zone gas feed. The etch gas is formed into a plasma to etch the layer, simultaneous with the providing the pulsed etch gas from the inner injection zone gas feed and providing the pulsed gas from the outer interjection zone gas feed.

    SEMICONDUCTOR SUBSTRATE BEVEL CLEANING
    3.
    发明申请
    SEMICONDUCTOR SUBSTRATE BEVEL CLEANING 有权

    公开(公告)号：US20220375746A1

    公开(公告)日：2022-11-24

    申请号：US17767228

    申请日：2020-10-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Saravanapriyan SRIRAMAN

    IPC: H01L21/02 ,  H01J37/32

    Abstract: A system for performing a bevel cleaning process on a substrate includes a substrate support including an electrode and a plurality of plasma needles arranged around a perimeter of the substrate support. The plasma needles are in fluid communication with a gas delivery system and are configured to supply reactive gases from the gas delivery system to a bevel region of the substrate when the substrate is arranged on the substrate support and electrically couple to the electrode of the substrate support and generate plasma around the bevel region of the substrate.

    Multi-Zone Cooling Of Plasma Heated Window
    4.
    发明申请
    Multi-Zone Cooling Of Plasma Heated Window 审中-公开

    公开(公告)号：US20190148118A1

    公开(公告)日：2019-05-16

    申请号：US15814139

    申请日：2017-11-15

    Applicant: Lam Research Corporation

    Inventor： Yiting ZHANG ,  Richard MARSH ,  Saravanapriyan SRIRAMAN ,  Alexander PATERSON

    IPC: H01J37/32 ,  H01L21/67 ,  F25D1/00

    Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS
    7.
    发明申请
    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS 有权

    公开(公告)号：US20210050188A1

    公开(公告)日：2021-02-18

    申请号：US17084103

    申请日：2020-10-29

    Applicant: Lam Research Corporation

    Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

    IPC: H01J37/32

    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS
    8.
    发明申请
    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS 有权

    公开(公告)号：US20230039721A1

    公开(公告)日：2023-02-09

    申请号：US17960576

    申请日：2022-10-05

    Applicant: Lam Research Corporation

    Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

    IPC: H01J37/32

    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    FAST-GAS SWITCHING FOR ETCHING
    10.
    发明申请
    FAST-GAS SWITCHING FOR ETCHING 审中-公开

    公开(公告)号：US20160172206A1

    公开(公告)日：2016-06-16

    申请号：US15048721

    申请日：2016-02-19

    Applicant: Lam Research Corporation

    Inventor： Saravanapriyan SRIRAMAN ,  Alexander PATERSON

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/32137 ,  H01L21/67069

    Abstract: A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first frequency, wherein flow of pulsed etch gas from the inner injection zone gas feed is ramped down to zero. The pulsed etch gas is provided from the outer injection zone gas feed at the first frequency and simultaneous with and out of phase with the pulsed etch gas from the inner injection zone gas feed. The etch gas is formed into a plasma to etch the layer, simultaneous with the providing the pulsed etch gas from the inner injection zone gas feed and providing the pulsed gas from the outer interjection zone gas feed.

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