公开(公告)号：US20220254612A1

公开(公告)日：2022-08-11

申请号：US17632066

申请日：2020-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Christopher KIMBALL ,  Hema Swaroop MOPIDEVI ,  Saravanapriyan SRIRAMAN ,  Tom A. KAMP ,  Darrell EHRLICH ,  Anthony CONTRERAS ,  Chiara Helena Catherina MACPHERSON

IPC: H01J37/32 ,  H01L21/687

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

公开(公告)号：US20180308693A1

公开(公告)日：2018-10-25

申请号：US15492662

申请日：2017-04-20

Applicant: Lam Research Corporation

Inventor： Tom A. KAMP ,  Mirzafer K. ABATCHEV

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.

公开(公告)号：US20210257195A1

公开(公告)日：2021-08-19

申请号：US17302622

申请日：2021-05-07

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20230083737A1

公开(公告)日：2023-03-16

申请号：US17991193

申请日：2022-11-21

Applicant: Lam Research Corporation

Inventor： Tom A. KAMP ,  Carlos Leal-Verdugo

IPC: H01L21/687 ,  H01L21/67

Abstract: A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.

公开(公告)号：US20200373193A1

公开(公告)日：2020-11-26

申请号：US16769681

申请日：2018-11-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Tom A. KAMP ,  Carlos LEAL-VERDUGO

IPC: H01L21/687 ,  H01L21/67

Abstract: A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

公开(公告)号：US20230317437A1

公开(公告)日：2023-10-05

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce Edmund FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01J37/32862 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/0228 ,  H01L21/67069 ,  C23C16/0236 ,  C23C16/45544 ,  C23C16/4405 ,  H01J37/32449 ,  H01L21/02164 ,  H01J2237/3341 ,  H01J2237/3321 ,  H01J2237/186 ,  H01J2237/1825 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20230178344A1

公开(公告)日：2023-06-08

申请号：US17924618

申请日：2021-05-04

Applicant: LAM RESEARCH CORPORATION

Inventor： John DREWERY ,  Kevin FLYNN ,  Jeremy George SMITH ,  Tom A. KAMP

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32449 ,  H01J2237/002 ,  H01J2237/334 ,  H01J2237/3321

Abstract: A baseplate of a substrate support assembly includes a cavity between an upper region, a lower region, and sidewalls of the baseplate, a plurality of pillars arranged in the cavity between the upper and lower regions, an inlet to supply a liquid to the cavity, and an outlet to vent vapor of the liquid. In another implementation, a baseplate of a substrate support assembly includes a first channel arranged in the baseplate, a second channel arranged above the first channel, a plurality of vertical channels connecting the first channel to the second channel, an inlet to supply a liquid to the first channel, and an outlet to vent vapor of the liquid from the second channel.