公开(公告)号：US20150076537A1

公开(公告)日：2015-03-19

申请号：US14244100

申请日：2014-04-03

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei Chou ,  Jui-Yi Chu

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/04 ,  H01L33/10

Abstract: The present disclosure provides a light-emitting diode, including: a silicon substrate having a first surface and a second surface opposite to the first surface; a buffer layer disposed over the first surface of the substrate, wherein the buffer layer includes alternating SiC and InxAlyGa(1-x-y)N layers, wherein 0≦x≦1, 0≦y≦1, and 0≦(x+y)≦1 and one of the SiC layers directly contacts the substrate; a first semiconductor layer disposed over the buffer layer and having a first conductive type; an active layer disposed over the first semiconductor layer; and a second semiconductor layer disposed over the active layer and having a second conductive type different from the first conductive type.

Abstract translation: 本公开提供了一种发光二极管，包括：具有第一表面和与第一表面相对的第二表面的硅衬底; 其中所述缓冲层包括交替的SiC和In x Al y Ga（1-xy）N层，其中0≤n1E; x和nlE; 1,0和nlE; y和nlE; 1和0和nlE;（x + y） ＆nlE; 1，其中一个SiC层直接接触衬底; 设置在所述缓冲层上并具有第一导电类型的第一半导体层; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上并具有不同于所述第一导电类型的第二导电类型的第二半导体层。

公开(公告)号：US09153736B2

公开(公告)日：2015-10-06

申请号：US14298826

申请日：2014-06-06

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei Chou ,  Jui-Yi Chu ,  Cheng-Ta Kuo

IPC: H01L33/14 ,  H01L21/266 ,  H01L33/22 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/145 ,  H01L21/2654 ,  H01L21/26586 ,  H01L29/34 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.

Abstract translation: 本发明提供一种发光二极管装置及其制造方法。 发光二极管装置包括金属基板。 发光二极管结构结合在金属基板上。 发光二极管结构包括第一类型半导体衬底和第二类型半导体层。 第一类型半导体层具有与第一表面相对的第一表面和第二表面。 第二类型半导体层与金属基板接触。 发光层设置在第一类型半导体衬底和第二类型半导体层之间。 第二表面的一部分和与第二表面相邻的侧壁是不均匀的粗糙表面。

公开(公告)号：US20140197423A1

公开(公告)日：2014-07-17

申请号：US13932675

申请日：2013-07-01

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Jui-Yi Chu ,  Shih-Pu Yang

IPC: H01L33/20

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: The invention provides a substrate structure for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure comprises a substrate having a first surface and a second surface opposite to the first surface; and a plurality of grooving structure formed on the first surface of the substrate. In which, the light-emitting diode is formed on the first surface of the substrate.

Abstract translation: 本发明提供一种用于制造发光二极管的衬底结构和制造该发光二极管的方法。 衬底结构包括具有第一表面和与第一表面相对的第二表面的衬底; 以及形成在所述基板的第一表面上的多个切槽结构。 其中，发光二极管形成在基板的第一表面上。