公开(公告)号：US09673353B2

公开(公告)日：2017-06-06

申请号：US14694602

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/20 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

公开(公告)号：US09601661B2

公开(公告)日：2017-03-21

申请号：US14694617

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/20 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

公开(公告)号：US20150076537A1

公开(公告)日：2015-03-19

申请号：US14244100

申请日：2014-04-03

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei Chou ,  Jui-Yi Chu

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/04 ,  H01L33/10

Abstract: The present disclosure provides a light-emitting diode, including: a silicon substrate having a first surface and a second surface opposite to the first surface; a buffer layer disposed over the first surface of the substrate, wherein the buffer layer includes alternating SiC and InxAlyGa(1-x-y)N layers, wherein 0≦x≦1, 0≦y≦1, and 0≦(x+y)≦1 and one of the SiC layers directly contacts the substrate; a first semiconductor layer disposed over the buffer layer and having a first conductive type; an active layer disposed over the first semiconductor layer; and a second semiconductor layer disposed over the active layer and having a second conductive type different from the first conductive type.

Abstract translation: 本公开提供了一种发光二极管，包括：具有第一表面和与第一表面相对的第二表面的硅衬底; 其中所述缓冲层包括交替的SiC和In x Al y Ga（1-xy）N层，其中0≤n1E; x和nlE; 1,0和nlE; y和nlE; 1和0和nlE;（x + y） ＆nlE; 1，其中一个SiC层直接接触衬底; 设置在所述缓冲层上并具有第一导电类型的第一半导体层; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上并具有不同于所述第一导电类型的第二导电类型的第二半导体层。

公开(公告)号：US09892911B2

公开(公告)日：2018-02-13

申请号：US15428416

申请日：2017-02-09

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  C30B29/66

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

公开(公告)号：US09153736B2

公开(公告)日：2015-10-06

申请号：US14298826

申请日：2014-06-06

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei Chou ,  Jui-Yi Chu ,  Cheng-Ta Kuo

IPC: H01L33/14 ,  H01L21/266 ,  H01L33/22 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/145 ,  H01L21/2654 ,  H01L21/26586 ,  H01L29/34 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.

Abstract translation: 本发明提供一种发光二极管装置及其制造方法。 发光二极管装置包括金属基板。 发光二极管结构结合在金属基板上。 发光二极管结构包括第一类型半导体衬底和第二类型半导体层。 第一类型半导体层具有与第一表面相对的第一表面和第二表面。 第二类型半导体层与金属基板接触。 发光层设置在第一类型半导体衬底和第二类型半导体层之间。 第二表面的一部分和与第二表面相邻的侧壁是不均匀的粗糙表面。

公开(公告)号：US09041159B2

公开(公告)日：2015-05-26

申请号：US13932665

申请日：2013-07-01

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L29/06 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.

Abstract translation: 外延生长方法包括以下步骤：提供衬底; 在基板上形成牺牲层; 图案化牺牲层以在基板上形成彼此间隔开的多个凸起; 在衬底上外延地形成第一外延层以覆盖每个凸块的一部分; 去除凸起以形成多个空腔; 并且在所述第一外延层上外延地形成第二外延层，使得所述空腔被所述第一外延层和所述第二外延层包围。 还公开了通过该方法生长的外延结构。

公开(公告)号：US20140008766A1

公开(公告)日：2014-01-09

申请号：US13932665

申请日：2013-07-01

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/02

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.

Abstract translation: 外延生长方法包括以下步骤：提供衬底; 在基板上形成牺牲层; 图案化牺牲层以在基板上形成彼此间隔开的多个凸起; 在衬底上外延地形成第一外延层以覆盖每个凸块的一部分; 去除凸起以形成多个空腔; 并且在所述第一外延层上外延地形成第二外延层，使得所述空腔被所述第一外延层和所述第二外延层包围。 还公开了通过该方法生长的外延结构。