ORGANIC LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD OF THE SAME

    公开(公告)号:US20180005576A1

    公开(公告)日:2018-01-04

    申请号:US15637983

    申请日:2017-06-29

    Abstract: According to an aspect of the present disclosure, an organic light emitting display device includes a plurality of pixels each including a pixel driving circuit. The plurality of pixels includes an organic light emitting diode and a driving TFT configured to control driving of the organic light emitting diode and including a gate node as a first node, a source node as a second node, and a drain node. Also, the plurality of pixels includes first to third switching TFTs electrically connected to the driving TFT and first and second storage capacitors configured to store a voltage to be applied to the driving TFT DT. Further, the plurality of pixels includes a coupling capacitor connected to a gate node of the third switching TFT so as to increase a voltage to be applied to the gate node of the driving TFT.

    FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    具有氧化物薄膜晶体管的平板显示装置及其制造方法

    公开(公告)号:US20140353660A1

    公开(公告)日:2014-12-04

    申请号:US14101160

    申请日:2013-12-09

    Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

    Abstract translation: 公开了一种具有氧化物薄膜晶体管的平板显示装置,其包括:形成在基板上的缓冲膜; 形成在缓冲膜上的具有第一长度的宽度的氧化物半导体层; 栅极绝缘膜,其具有第二长度的宽度并形成在所述氧化物半导体层上; 栅电极,其具有第三长度的宽度并形成在栅极绝缘膜上; 形成在设置有栅电极的基板的整个表面上的层间绝缘膜; 源极和漏极,形成在层间绝缘膜上并连接到氧化物半导体层; 形成在设置有源极和漏极的衬底的整个表面上的钝化膜; 以及形成在钝化膜上并连接到漏电极的像素电极。 第一长度大于第二长度,第二长度大于第三长度。

    Flat Panel Display Device with Oxide Thin Film Transistor and Method of Fabricating the Same
    4.
    发明申请
    Flat Panel Display Device with Oxide Thin Film Transistor and Method of Fabricating the Same 有权
    具有氧化物薄膜晶体管的平板显示装置及其制造方法

    公开(公告)号:US20160204130A1

    公开(公告)日:2016-07-14

    申请号:US15078242

    申请日:2016-03-23

    Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

    Abstract translation: 公开了一种具有氧化物薄膜晶体管的平板显示装置,其包括:形成在基板上的缓冲膜; 形成在缓冲膜上的具有第一长度的宽度的氧化物半导体层; 栅极绝缘膜,其具有第二长度的宽度并形成在所述氧化物半导体层上; 栅电极,其具有第三长度的宽度并形成在栅极绝缘膜上; 形成在设置有栅电极的基板的整个表面上的层间绝缘膜; 源极和漏极,形成在层间绝缘膜上并连接到氧化物半导体层; 形成在设置有源极和漏极的衬底的整个表面上的钝化膜; 以及形成在钝化膜上并连接到漏电极的像素电极。 第一长度大于第二长度,第二长度大于第三长度。

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