公开(公告)号：US20140202526A1

公开(公告)日：2014-07-24

申请号：US14151478

申请日：2014-01-09

Applicant: LG ELECTRONICS INC.

Inventor： Eunhye YOUN ,  Sangwook PARK ,  Seunghwan SHIM ,  Yujin LEE

IPC: H01L31/065 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/065 ,  H01L31/035272 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/547

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的杂质的基板，位于基板的前表面的发射极区域，并且包含位于第一导电类型的第二导电类型的第二导电类型的杂质; 并且具有开口，包含第一导电类型的杂质的背面场区域，连接到发射极区域的第一电极和连接到背面场区域的第二电极。 背面场区域包括位于背面钝化层上的第一背面场区域和位于由背面钝化层的开口暴露的衬底背面的第二背面场区域。

公开(公告)号：US20160027951A1

公开(公告)日：2016-01-28

申请号：US14811475

申请日：2015-07-28

Applicant: LG ELECTRONICS INC.

Inventor： Seunghwan SHIM ,  Ilhyoung JUNG ,  Indo CHUNG ,  Eunhye YOUN

IPC: H01L31/077 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/077 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括掺杂有第一导电类型的杂质的半导体衬底，设置在衬底的前表面处的前表面场区域，并且以高于衬底的浓度掺杂第一导电类型的杂质，隧道 层，其设置在所述基板的背面上并由电介质材料形成，所述发射极区域设置在所述隧道层的背面的第一部分并且掺杂有与所述第一导电类型相反的第二导电类型的杂质，以及背面 表面场区域设置在隧道层的后表面的第二部分处，并以高于衬底的浓度掺杂第一导电类型的杂质。