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公开(公告)号：US12113161B2
公开(公告)日：2024-10-08
申请号：US17638444
申请日：2019-08-30
Applicant: LG ELECTRONICS INC.
Inventor： Indo Chung , Jeonghyo Kwon , Dohan Kim
CPC classification number: H01L33/62 , H01L27/156 , H01L33/005 , H01L33/382 , H01L2933/0016 , H01L2933/0066
Abstract: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.
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公开(公告)号：US12243861B2
公开(公告)日：2025-03-04
申请号：US17770855
申请日：2019-10-22
Applicant: LG ELECTRONICS INC.
Inventor： Dohan Kim , Jeonghyo Kwon , Soohyun Kim , Indo Chung
Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.
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公开(公告)号：US08889464B2
公开(公告)日：2014-11-18
申请号：US13890931
申请日：2013-05-09
Applicant: LG Electronics Inc.
Inventor： Mann Yi , Jeonghyo Kwon , Seongeun Lee , Taeyoung Kwon
IPC: H01L21/00 , H01L31/0232 , H01L31/0236 , H01L21/02 , H01L31/0216 , H01L31/068
CPC classification number: H01L31/0236 , H01L21/02054 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/068 , Y02E10/52 , Y02E10/547
Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.
Abstract translation: 一种制造太阳能电池的方法包括：在半导体衬底的第一表面上进行干蚀刻工艺以形成包括多个微小突起的纹理化表面，使用第一清洁工艺去除微小突起的损伤部分， 基本化学和去除吸附在微小突起表面上的杂质，进行第二次清洁处理，以在第一次清洁处理之后，使用酸性化学品除去残留或再次吸附在微小突起的表面上的杂质，以及形成发射极区域 半导体衬底的第一表面。
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