公开(公告)号：US20240170433A1

公开(公告)日：2024-05-23

申请号：US18283721

申请日：2021-03-25

Applicant: LG ELECTRONICS INC.

Inventor： Bongseok CHOI ,  Joonkwon MOON ,  Sungjin PARK ,  Taesu OH

IPC: H01L23/00 ,  H01L25/075 ,  H01L25/13 ,  H01L33/62

CPC classification number: H01L24/24 ,  H01L24/25 ,  H01L25/0753 ,  H01L25/13 ,  H01L33/62 ,  H01L2224/24105 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/2512 ,  H01L2924/12041

Abstract: A light emitting device package include a first layer; a plurality of light emitting devices on the first layer; a plurality of electrode pads surrounding the plurality of light emitting devices; a second layer on the plurality of light emitting devices; a plurality of connection electrodes disposed on the second layer to connect between the plurality of light emitting devices and the plurality of electrode pads, and a third layer on the plurality of connection electrodes.

公开(公告)号：US20240038933A1

公开(公告)日：2024-02-01

申请号：US18010085

申请日：2020-06-15

Applicant: LG ELECTRONICS INC.

Inventor： Bongseok CHOI ,  Sungjin PARK ,  Joonkwon MOON ,  Taesu OH

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/40 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L25/0753 ,  H01L33/405 ,  H01L33/54 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2933/005

Abstract: The embodiment relates to a semiconductor light emitting device package and a display device including the same. Semiconductor light emitting device package according to an embodiment can comprises a light emitting structure 155 including a first conductivity type semiconductor layer 155a, an active layer 155b, and a second conductivity type semiconductor layer 155c; a first electrode 151 and a second electrode 152 electrically connected to the first conductivity type semiconductor layer 155a and the second conductivity type semiconductor layer 155c of the light emitting structure 155, respectively; an interlayer insulating layer disposed on the side of the light emitting structure 155 and an adhesive layer 158 disposed on the light emitting structure 155.
The first electrode 151 can include a first reflective electrode 151a and a first pad electrode 151b, the second electrode 152 also can include a second reflective electrode 152a and a second pad electrode 152b, and a cross-sectional shape of the first reflective electrode 151a and the second reflective electrode 152a can comprise a cup shape.

公开(公告)号：US20230327047A1

公开(公告)日：2023-10-12

申请号：US18023657

申请日：2020-08-27

Applicant: LG ELECTRONICS INC.

Inventor： Joonkwon MOON ,  Sungjin PARK ,  Taesu OH ,  Bongseok CHOI

IPC: H01L33/00 ,  H01L27/15 ,  B23K26/06 ,  B23K26/57

CPC classification number: H01L33/005 ,  H01L27/156 ,  B23K26/0661 ,  B23K26/57 ,  H01L2933/0008

Abstract: Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same.
A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device.
The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.

公开(公告)号：US20230215845A1

公开(公告)日：2023-07-06

申请号：US18009470

申请日：2020-06-12

Applicant: LG ELECTRONICS INC.

Inventor： Taesu OH ,  Joonkwon MOON ,  Sungjin PARK ,  Bongseok CHOI

IPC: H01L25/075

CPC classification number: H01L25/0753

Abstract: An embodiment relates to a display device comprising a semiconductor light-emitting device. A display device comprising a semiconductor light-emitting device, according to an embodiment, can comprise: a main pixel group including a plurality of main pixels; and a shared redundancy pixel including a plurality of shared light-emitting devices arranged between and on the periphery of the plurality of main pixels. The main pixel group can comprise the plurality of main pixels, each of which includes a first semiconductor light-emitting device, a second semiconductor light-emitting device, and a third semiconductor light-emitting device. The shared redundancy pixel can comprise: first group shared light-emitting devices arranged between the plurality of main pixels; and second shared light-emitting devices arranged on the periphery of the plurality of main pixels.

公开(公告)号：US20220375894A1

公开(公告)日：2022-11-24

申请号：US17742239

申请日：2022-05-11

Applicant: LG ELECTRONICS INC.

Inventor： Taesu OH ,  Joonkwon MOON ,  Sungjin PARK ,  Bongseok CHOI

IPC: H01L23/00 ,  H01L25/16

Abstract: A display device includes a substrate including a plurality of pixels, a plurality of protrusions on the substrate, an adhesive layer on the substrate, and a plurality of semiconductor light emitting devices on the adhesive layer. The semiconductor light emitting devices can be disposed in a pixel among the plurality of pixels, and the plurality of protrusions can be disposed around the plurality of semiconductor light emitting devices in the pixel.

公开(公告)号：US20190157502A1

公开(公告)日：2019-05-23

申请号：US16037174

申请日：2018-07-17

Applicant: LG DISPLAY CO., LTD. ,  LG ELECTRONICS INC.

Inventor： Joonkwon MOON ,  Hwankuk YUH ,  Taesu OH

IPC: H01L33/00 ,  H01L21/67 ,  H01L21/683 ,  H01L25/16

Abstract: A growth substrate including micro-light emitting diode (LED) chips and a method of manufacturing a light emitting diode display using the growth substrate are disclosed. The growth substrate includes LED chips. The LED chips are divided into n groups each including p LED chips, where each of the n and p is an integer equal to or greater than 2. At least two of the n groups are adjacent to each other. Each of the n includes a first LED chip having a directionality toward a first direction and a second LED chip having a directionality toward a second direction different from the first direction.