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公开(公告)号:US20180083149A1
公开(公告)日:2018-03-22
申请号:US15600042
申请日:2017-05-19
Applicant: LG ELECTRONICS INC.
Inventor: Chungyi KIM , Youngsung YANG , Jaewoo CHOI , Mihee HEO
IPC: H01L31/0368 , H01L31/0216 , H01L31/18
Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.
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公开(公告)号:US20190097069A1
公开(公告)日:2019-03-28
申请号:US16132672
申请日:2018-09-17
Applicant: LG Electronics Inc.
Inventor: Chungyi KIM , Junghoon CHOI
IPC: H01L31/048 , H01L31/05 , H02S20/22
Abstract: A solar cell panel includes a solar cell; a sealing member for sealing the solar cell; a first cover member positioned at a first surface of the solar cell on a first side of the sealing member; and a second cover member positioned at a second surface of the solar cell on a second side of the sealing member. The first cover member includes a base member and a colored portion having a lower light transmittance than the base member and partially formed on the base member to form a colored region. The second cover member includes a cover portion having a lower brightness than the colored portion and positioned at least an inactive region where the solar cell is not positioned.
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公开(公告)号:US20220246777A1
公开(公告)日:2022-08-04
申请号:US17617641
申请日:2020-04-09
Applicant: LG ELECTRONICS INC.
Inventor: Chungyi KIM , Junghoon CHOI , Jeongkyu KIM
IPC: H01L31/048
Abstract: A method for manufacturing a graphic cover substrate for a solar cell panel according to an embodiment of the present disclosure includes applying a cover layer, which is forming the cover layer composed of a ceramic material layer on a transfer member; transferring, which is transferring the cover layer to a base member; and reinforcing, which is forming a cover portion by reinforcing or semi-reinforcing the base member on which the cover layer is formed.
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公开(公告)号:US20190280138A1
公开(公告)日:2019-09-12
申请号:US16294605
申请日:2019-03-06
Applicant: LG ELECTRONICS INC.
Inventor: Chungyi KIM , Minpyo KIM , Junghoon CHOI
IPC: H01L31/048 , H01L31/05 , H02S20/22
Abstract: A solar cell panel can include a solar cell; a sealing member for sealing the solar cell; a first cover member disposed on the sealing member at one side of the solar cell; and a second cover member disposed on the sealing member at another side of the solar cell, in which the first cover member includes a base member and a colored portion having a light transmittance lower than a light transmittance of the base member, the first cover member constituting a colored area, and the colored portion includes at least two layers each formed of an oxide ceramic composition and having different colors or different light transmittances.
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公开(公告)号:US20190296163A1
公开(公告)日:2019-09-26
申请号:US16430018
申请日:2019-06-03
Applicant: LG ELECTRONICS INC.
Inventor: Jaewoo CHOI , Chungyi KIM , Joohyun KOH
IPC: H01L31/0224 , H01L31/18 , H01L31/0216
Abstract: A solar cell includes a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a silicon oxynitride layer on a light incident surface of the semiconductor substrate, wherein the silicon oxynitride layer comprises a first phase region having a first oxygen content and a first nitrogen content; a second phase region having a second oxygen content higher than the first oxygen content and a second nitrogen content lower than the first nitrogen content; and a third phase region having a third oxygen content lower than the second oxygen content and a third nitrogen content lower than the second nitrogen content.
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公开(公告)号:US20180204962A1
公开(公告)日:2018-07-19
申请号:US15858798
申请日:2017-12-29
Applicant: LG ELECTRONICS INC.
Inventor: Jaewoo CHOI , Chungyi KIM , Joohyun KOH
IPC: H01L31/0224 , H01L31/18 , H01L31/0216
CPC classification number: H01L31/022425 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
Abstract: Disclosed is a solar cell including: a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a passivation layer on a light incident surface of the semiconductor substrate. The passivation layer includes a first layer in contact with the light incident surface of the semiconductor substrate and formed of silicon oxynitride for ultraviolet stability. The first layer includes a plurality of phases of the silicon oxynitride, and the plurality of phases are formed of the silicon oxynitride having different compositions.
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公开(公告)号:US20180122981A1
公开(公告)日:2018-05-03
申请号:US15858016
申请日:2017-12-29
Applicant: LG ELECTRONICS INC.
Inventor: Youngsung YANG , Hyungjin KWON , Chungyi KIM , Junghoon CHOI
IPC: H01L31/18 , H01L31/068 , H01L31/0216 , H01L21/02
CPC classification number: H01L31/1868 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L31/02167 , H01L31/0682 , H01L31/1864 , Y02E10/547
Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.
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公开(公告)号:US20160365472A1
公开(公告)日:2016-12-15
申请号:US15178274
申请日:2016-06-09
Applicant: LG ELECTRONICS INC.
Inventor: Youngsung YANG , Hyungjin KWON , Chungyi KIM , Junghoon CHOI
IPC: H01L31/18
CPC classification number: H01L31/1868 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L31/02167 , H01L31/0682 , H01L31/1864 , Y02E10/547
Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.
Abstract translation: 公开了一种制造太阳能电池的方法。 该方法包括使用半导体衬底上的绝缘膜形成保护膜,该半导体衬底包括第一导电类型的基底区域并由晶体硅形成。 保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下,在600℃以上的热处理温度下进行的热处理工序。
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公开(公告)号:US20160056322A1
公开(公告)日:2016-02-25
申请号:US14830480
申请日:2015-08-19
Applicant: LG ELECTRONICS INC.
Inventor: Youngsung YANG , Junghoon CHOI , Chungyi KIM
IPC: H01L31/068 , H01L31/0352 , H01L31/065 , H01L31/18 , H01L31/0224
CPC classification number: H01L31/068 , H01L31/022425 , H01L31/022441 , H01L31/035209 , H01L31/035272 , H01L31/03529 , H01L31/065 , H01L31/0745 , H01L31/0747 , H01L31/18 , Y02E10/50
Abstract: A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.
Abstract translation: 讨论太阳能电池,太阳能电池包括:半导体衬底; 在所述半导体衬底的表面上的隧穿层; 在所述隧道层上的缓冲层,其中所述缓冲层是与所述隧穿层分离的层,并且包括本征缓冲部分,并且其中所述缓冲层的材料,组成和晶体结构中的至少一种与所述缓冲层的材料, 的隧道层; 在隧穿层上的导电型区域,并且包括具有第一导电类型的第一导电类型区域和具有第二导电类型的第二导电类型区域; 以及连接到导电类型区域的电极。 缓冲层位于隧道层附近并与电极分开。
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