公开(公告)号：US20170125636A1

公开(公告)日：2017-05-04

申请号：US15300839

申请日：2015-03-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Ho Jun LEE

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/32 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237 ,  F21K9/238 ,  F21V3/02 ,  F21V7/22 ,  F21V29/773 ,  F21V29/777 ,  F21Y2115/10 ,  G02B6/0055 ,  G02B6/0073 ,  G02B6/0088 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light-emitting device according to an embodiment comprises: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer and containing Al; a first conductive type semiconductor layer disposed on the second buffer layer; an active layer disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the second buffer layer comprises a first layer and a second layer which are horizontally disposed, the first layer having an increased Al composition ratio as the first layer becomes closer to the first conductive type semiconductor layer, and the second layer having an decreased Al composition ratio as the second layer becomes closer to the first conductive type semiconductor layer. The embodiment configures the buffer layer by horizontally disposing the first layer of which the Al composition ratio linearly increases and the second layer of which the Al composition ratio linearly decreases, thereby having an effect of being capable of effectively controlling strain due to the lattice mismatch and the thermal expansion coefficient difference between the substrate and the first conductive type semiconductor layer.

公开(公告)号：US20150083995A1

公开(公告)日：2015-03-26

申请号：US14496599

申请日：2014-09-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Hoon CHOI ,  Young Jae CHOI ,  Ho Jun LEE

IPC: H01L33/12 ,  H01L33/28 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is a light emitting device package capable of improving luminous efficiency. The light emitting device includes a substrate; a first buffer layer on the substrate; a first insulating layer on the first buffer layer; a second buffer layer on the first insulating layer; a second insulating layer on the second buffer layer; a third buffer layer around the second buffer layer and the insulating layer; and a light emitting structure on the third buffer layer.

Abstract translation: 公开了能够提高发光效率的发光器件封装。 发光装置包括：基板; 衬底上的第一缓冲层; 在第一缓冲层上的第一绝缘层; 在所述第一绝缘层上的第二缓冲层; 在第二缓冲层上的第二绝缘层; 围绕第二缓冲层和绝缘层的第三缓冲层; 以及在第三缓冲层上的发光结构。