公开(公告)号：US20190198711A1

公开(公告)日：2019-06-27

申请号：US16231776

申请日：2018-12-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Hyun Ju KIM ,  Hyung Jo PARK ,  Hwan Kyo KIM

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/62 ,  H01L33/36 ,  H01L23/00

CPC classification number: H01L33/10 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.