公开(公告)号：US20150129920A1

公开(公告)日：2015-05-14

申请号：US14599184

申请日：2015-01-16

申请人： LG INNOTEK CO., LTD.

发明人： Hyung Jo PARK

IPC分类号： H01L33/60 ,  H01L33/36

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387

摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a reflective layer under the light emitting structure; a first electrode layer on the first conductive semiconductor layer; a metal layer under the reflective layer; and a conductive support member under the metal layer. The reflective layer has a thickness of 650 nm to 1550 nm. A top surface of the first conductive semiconductor layer includes a flat first region adjacent to an edge and a rough second region adjacent to the first region. An edge region of a top portion of the conductive support member has a protrusion, and the edge region of the top portion of the conductive support member is not overlapped with the light emitting structure in a vertical direction.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括发光结构，其包括第一导电半导体层，有源层和第二导电半导体层; 在发光结构下的反射层; 在所述第一导电半导体层上的第一电极层; 反射层下面的金属层; 以及金属层下面的导电支撑构件。 反射层的厚度为650nm〜1550nm。 第一导电半导体层的顶表面包括与边缘相邻的平坦的第一区域和与第一区域相邻的粗糙的第二区域。 导电支撑构件的顶部的边缘区域具有突起，并且导电支撑构件的顶部的边缘区域在垂直方向上不与发光结构重叠。

公开(公告)号：US20190067507A1

公开(公告)日：2019-02-28

申请号：US16077261

申请日：2017-02-10

申请人： LG INNOTEK CO., LTD.

发明人： Jung Hun OH ,  Hyung Jo PARK

IPC分类号： H01L31/075 ,  H01L31/105 ,  H01L33/10 ,  H01L33/38 ,  H01L33/46

摘要： A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.

公开(公告)号：US20200295230A1

公开(公告)日：2020-09-17

申请号：US16086221

申请日：2017-04-12

申请人： LG INNOTEK CO., LTD.

发明人： Hyung Jo PARK

IPC分类号： H01L33/40 ,  H01L33/44 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/0304 ,  H01L33/32

摘要： One embodiment provides a semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a reflective layer disposed on the third semiconductor layer, wherein the part between the first and second semiconductor layers, the part between the third and second semiconductor layers, and the second semiconductor layer comprise a depletion region, and the conductivity of the first semiconductor layer and the conductivity of the third semiconductor layer are different from each other, and the second semiconductor layer comprises an intrinsic semiconductor layer.

公开(公告)号：US20190198711A1

公开(公告)日：2019-06-27

申请号：US16231776

申请日：2018-12-24

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Ju KIM ,  Hyung Jo PARK ,  Hwan Kyo KIM

IPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/62 ,  H01L33/36 ,  H01L23/00

CPC分类号： H01L33/10 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2933/0066

摘要： Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

公开(公告)号：US20130292732A1

公开(公告)日：2013-11-07

申请号：US13936032

申请日：2013-07-05

申请人： LG INNOTEK CO., LTD.

发明人： Hyung Jo PARK

IPC分类号： H01L33/22

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387

摘要： Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括包含III-V族化合物半导体的发光结构，包括彼此不同并交替堆叠在发光结构下的介质的反射层以及反射层下的第二电极层。