公开(公告)号：US09773948B2

公开(公告)日：2017-09-26

申请号：US14755933

申请日：2015-06-30

Applicant: LG INNOTEK CO., LTD.

Inventor： Se Yeon Jung ,  Yong Gyeong Lee

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

公开(公告)号：US09806233B2

公开(公告)日：2017-10-31

申请号：US15232263

申请日：2016-08-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Se Yeon Jung ,  Yong Gyeong Lee

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38 ,  H01L33/46 ,  H01L33/14 ,  H01L33/06 ,  H01L33/20

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

公开(公告)号：US10600945B2

公开(公告)日：2020-03-24

申请号：US16035306

申请日：2018-07-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Chang Man Lim ,  Ki Seok Kim ,  Young Shin Kim ,  June O Song ,  Ju Hyeon Oh ,  Chang Hyeong Lee ,  Tae Sung Lee ,  Se Yeon Jung ,  Byung Yeon Choi ,  Sung Min Hwang

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/56 ,  H01L33/60 ,  H01L33/50

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

公开(公告)号：US09437781B2

公开(公告)日：2016-09-06

申请号：US14927112

申请日：2015-10-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Se Yeon Jung ,  Yong Gyeong Lee

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/06 ,  H01L33/14 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

Abstract translation: 公开了一种发光器件，其包括发光结构，该发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电流阻挡层，布置在待分离的发光结构上的第二电流阻挡层 彼此分别设置在第一电流阻挡层，第二电流阻挡层和发光结构上的透光导电层，分别电耦合到第一导电半导体层和第二导电半导体层的第一电极和第二电极 ，通过透光导电层形成的通孔，第二导电半导体层和有源层到第一导电半导体层的一部分，以及布置在通孔内的通孔。 这里，贯通电极在垂直方向上不与第一电流阻挡层重叠。