SURFACE TREATMENT OF SEMICONDUCTOR SENSORS
    7.
    发明申请
    SURFACE TREATMENT OF SEMICONDUCTOR SENSORS 审中-公开
    半导体传感器的表面处理

    公开(公告)号:US20160003768A1

    公开(公告)日:2016-01-07

    申请号:US14789795

    申请日:2015-07-01

    Abstract: A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

    Abstract translation: 传感器部件包括传感器,传感器包括与传感器协作的传感器表面和反应部位,并暴露传感器表面。 反应位点包括反应位点表面。 表面剂与反应位点表面或传感器表面结合。 表面活性剂包括在反应位点表面或传感器表面上与布朗斯台德碱或路易斯酸官能团反应的表面活性官能团,并且包括不具有供体电子对的远端官能团。

    DEEP MICROWELL DESIGNS AND METHODS OF MAKING THE SAME

    公开(公告)号:US20210102917A1

    公开(公告)日:2021-04-08

    申请号:US17088347

    申请日:2020-11-03

    Abstract: An apparatus includes a substrate; a gate structure disposed over the substrate and having an upper surface; a well structure disposed over the substrate and defining a well over the upper surface of the gate structure; a conductive layer disposed on the upper surface of the gate structure and at least partially extending along a wall of the well in the well structure; and a dielectric structure disposed over the well structure and defining an opening to the well.

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