METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL
    1.
    发明申请
    METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL 有权
    使用移除材料的方法和系统

    公开(公告)号:US20140191292A1

    公开(公告)日:2014-07-10

    申请号:US13734696

    申请日:2013-01-04

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Abstract translation: 一种制造传感器的方法,所述方法包括形成化学敏感场效应晶体管阵列(chemFET),在阵列中的chemFET上沉积电介质层,在电介质层上沉积保护层,蚀刻电介质层和 保护层以形成对应于chemFET的感测表面的空腔,以及去除保护层。 该方法还包括:将电介质层和保护层一起蚀刻以形成对应于chemFET的感测表面的空腔。 保护层是聚合物,光致抗蚀剂材料,贵金属,氧化铜和氧化锌中的至少一种。 使用氢氧化钠,有机溶剂,王水,碳酸铵,盐酸,乙酸和磷酸中的至少一种除去保护层。

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