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公开(公告)号：US20110027617A1
公开(公告)日：2011-02-03
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
IPC分类号： B32B9/00
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
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公开(公告)号：US20110027960A1
公开(公告)日：2011-02-03
申请号：US12793611
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Anh Duong , Sandra Malhotra , Imran Hashim
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Anh Duong , Sandra Malhotra , Imran Hashim
IPC分类号： H01L21/285 , H01L21/02
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。
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公开(公告)号：US08202808B2
公开(公告)日：2012-06-19
申请号：US12793611
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
IPC分类号： H01L21/285
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。
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公开(公告)号：US08592058B2
公开(公告)日：2013-11-26
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
IPC分类号： B32B9/00 , B32B19/00 , H01L27/108
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。
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公开(公告)号：US20100143607A1
公开(公告)日：2010-06-10
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。
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公开(公告)号：US08471049B2
公开(公告)日：2013-06-25
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。
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公开(公告)号：US20130210217A1
公开(公告)日：2013-08-15
申请号：US13572973
申请日：2012-08-13
申请人： Manchao Xiao , Iain Buchanan , Xinjian Lei
发明人： Manchao Xiao , Iain Buchanan , Xinjian Lei
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07F9/902 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/45553 , H01L45/06 , H01L45/144
摘要： The present invention is a process of making a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is also related to making antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth.
摘要翻译： 本发明是使用选自原子层沉积和化学气相沉积的方法制造锗 - 锑 - 碲合金（GST）或锗 - 铋 - 碲（GBT）膜的方法，其中甲硅烷基锑前体是 用作合金膜的锑源。 本发明还涉及使用选自原子层沉积和化学气相沉积的方法制备其它元素的锑合金，其中使用甲硅烷基锑或甲硅烷基铋前体作为锑或铋的来源。
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公开(公告)号：US08193027B2
公开(公告)日：2012-06-05
申请号：US13023145
申请日：2011-02-08
申请人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
发明人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
IPC分类号： H01L21/00 , H01L21/06 , H01L21/44 , H01L21/469
CPC分类号： H01L21/06 , C23C18/1204 , C23C18/1225 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L21/02658 , H01L31/0296 , H01L31/032 , H01L31/0322 , H01L45/06 , H01L45/144 , H01L45/1608 , Y02E10/541
摘要： Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
摘要翻译： 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。
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公开(公告)号：US08563353B2
公开(公告)日：2013-10-22
申请号：US13466275
申请日：2012-05-08
申请人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
发明人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
IPC分类号： H01L21/00 , H01L21/06 , H01L21/469
CPC分类号： H01L21/06 , C23C18/1204 , C23C18/1225 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L21/02658 , H01L31/0296 , H01L31/032 , H01L31/0322 , H01L45/06 , H01L45/144 , H01L45/1608 , Y02E10/541
摘要： Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
摘要翻译： 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。
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公开(公告)号：US20120220076A1
公开(公告)日：2012-08-30
申请号：US13466275
申请日：2012-05-08
申请人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
发明人： Manchao Xiao , Liu Yang , Xinjian Lei , Iain Buchanan
IPC分类号： H01L21/06
CPC分类号： H01L21/06 , C23C18/1204 , C23C18/1225 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L21/02658 , H01L31/0296 , H01L31/032 , H01L31/0322 , H01L45/06 , H01L45/144 , H01L45/1608 , Y02E10/541
摘要： Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
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