公开(公告)号：US08202808B2

公开(公告)日：2012-06-19

申请号：US12793611

申请日：2010-06-03

申请人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Iain Buchanan

发明人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Iain Buchanan

IPC分类号： H01L21/285

CPC分类号： C23C16/45531 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31691 ,  H01L28/56

摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

公开(公告)号：US08592058B2

公开(公告)日：2013-11-26

申请号：US12793614

申请日：2010-06-03

申请人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Iain Buchanan

发明人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Iain Buchanan

IPC分类号： B32B9/00 ,  B32B19/00 ,  H01L27/108

CPC分类号： C23C16/45531 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31691 ,  H01L28/56

摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

公开(公告)号：US20110027617A1

公开(公告)日：2011-02-03

申请号：US12793614

申请日：2010-06-03

申请人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Nobi Fuchigami ,  Iain Buchanan ,  Duong Anh ,  Sandra Malhotra ,  Imran Hashim

发明人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Nobi Fuchigami ,  Iain Buchanan ,  Duong Anh ,  Sandra Malhotra ,  Imran Hashim

IPC分类号： B32B9/00

CPC分类号： C23C16/45531 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31691 ,  H01L28/56

摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

公开(公告)号：US20110027960A1

公开(公告)日：2011-02-03

申请号：US12793611

申请日：2010-06-03

申请人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Nobi Fuchigami ,  Iain Buchanan ,  Anh Duong ,  Sandra Malhotra ,  Imran Hashim

发明人： Laura M. Matz ,  Xiangxin Rui ,  Xinjian Lei ,  Sunil Shanker ,  Moo-Sung Kim ,  Nobi Fuchigami ,  Iain Buchanan ,  Anh Duong ,  Sandra Malhotra ,  Imran Hashim

IPC分类号： H01L21/285 ,  H01L21/02

CPC分类号： C23C16/45531 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31691 ,  H01L28/56

摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

摘要翻译： 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

公开(公告)号：US20100143607A1

公开(公告)日：2010-06-10

申请号：US12629416

申请日：2009-12-02

申请人： Xinjian Lei ,  Daniel P. Spence ,  Moo-Sung Kim ,  Iain Buchanan ,  Laura M. Matz ,  Sergei Vladimirovich Ivanov

发明人： Xinjian Lei ,  Daniel P. Spence ,  Moo-Sung Kim ,  Iain Buchanan ,  Laura M. Matz ,  Sergei Vladimirovich Ivanov

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/22

CPC分类号： C23C16/455 ,  C07F7/003 ,  C23C16/18 ,  C23C16/40

摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

公开(公告)号：US08471049B2

公开(公告)日：2013-06-25

申请号：US12629416

申请日：2009-12-02

申请人： Xinjian Lei ,  Daniel P. Spence ,  Moo-Sung Kim ,  Iain Buchanan ,  Laura M. Matz ,  Sergei Vladimirovich Ivanov

发明人： Xinjian Lei ,  Daniel P. Spence ,  Moo-Sung Kim ,  Iain Buchanan ,  Laura M. Matz ,  Sergei Vladimirovich Ivanov

IPC分类号： C07F7/28 ,  C23C16/00

CPC分类号： C23C16/455 ,  C07F7/003 ,  C23C16/18 ,  C23C16/40

摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

摘要翻译： 本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。 一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。 本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

公开(公告)号：US08507704B2

公开(公告)日：2013-08-13

申请号：US12871284

申请日：2010-08-30

申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

IPC分类号： C07F5/00 ,  C07F5/06 ,  C07F9/00 ,  C07F13/00 ,  C07F7/00 ,  C07F11/00 ,  C07F1/00 ,  C07F3/00 ,  C07F15/00 ,  C07C49/92

CPC分类号： C09D1/00 ,  C23C16/18 ,  C23C16/404 ,  C23C16/448

摘要： A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

摘要翻译： 一种制剂，其包含：a）至少一种金属 - 配体配合物，其中一个或多个配体选自β-二酮酸酯，β-酮亚胺酸酯，β-酮酯酸酯，β-二亚胺酯，烷基，羰基，烷基羰基， 环戊二烯基，吡咯烷基，烷氧基化物，脒基，咪唑啉及其混合物; 金属选自元素周期表第2〜16族元素; 和（b）至少一种选自下组的氨基醚：R1R2NR3OR4NR5R6，R1OR4NR5R6，O（CH2CH2）2NR1，R1R2NR3N（CH2CH2）2O，R1R2NR3OR4N（CH2CH2）2O，O（CH2CH2）2NR1OR2N（CH2CH2） 其中R1-6独立地选自C1-10直链烷基，C1-10支链烷基，C1-10环烷基，C6-C10芳族，C1-10烷基胺，C1-10烷基氨基烷基，C1-10醚，C4 -C 10环醚，C 4 -C 10环氨基醚及其混合物。

公开(公告)号：US20110212629A1

公开(公告)日：2011-09-01

申请号：US12871284

申请日：2010-08-30

申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

IPC分类号： H01L21/31 ,  C09D7/12

CPC分类号： C09D1/00 ,  C23C16/18 ,  C23C16/404 ,  C23C16/448

摘要： A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

摘要翻译： 一种制剂，其包含：a）至少一种金属 - 配体配合物，其中一个或多个配体选自由β-葡萄糖酮酮，酮基酮，酮基酯，β-二亚胺，烷基，羰基 ，烷基羰基，环戊二烯基，吡咯啉，烷氧基，脒基，咪唑并及其混合物; 金属选自元素周期表第2〜16族元素; 和（b）至少一种选自下组的氨基醚：R1R2NR3OR4NR5R6，R1OR4NR5R6，O（CH2CH2）2NR1，R1R2NR3N，CH2R2， 其中R1-6独立地选自C1-10直链烷基，C1-10支链烷基，C1-10环烷基，C6-C10芳族，C1-10烷基胺，C1-10烷基氨基烷基，C1-10醚，C4 -C 10环醚，C 4 -C 10环氨基醚及其混合物。

公开(公告)号：US20130030191A1

公开(公告)日：2013-01-31

申请号：US13362077

申请日：2012-01-31

申请人： Wade Hampton Bailey, III ,  Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Moo-Sung Kim

发明人： Wade Hampton Bailey, III ,  Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Moo-Sung Kim

IPC分类号： C07F7/00 ,  C23C16/22 ,  C07F7/28

CPC分类号： C23C16/45553 ,  C07F7/003 ,  C23C16/405

摘要： Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, Wand R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

摘要翻译： 含有通式（1）（R1nPyr）（R2nPyr）的金属络合物ML1L2; 或（2）[（R8XR9）（R1nPyr）（R2nPyr）] ML1L2; 其中M是第IV族金属，Pyr是吡咯基配体，n = 1,2和3，L1和L2独立地选自烷氧基，酰胺或烷基，L1和L2可以连接在一起，R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团，并且选自直链和支链C 1-6烷基，W 9和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 ，X为CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。

公开(公告)号：US20110250126A1

公开(公告)日：2011-10-13

申请号：US12904421

申请日：2010-10-14

申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

IPC分类号： C07F7/00 ,  C01G23/047 ,  C07F7/28

CPC分类号： C23C16/18 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

摘要： The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

摘要翻译： 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。