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    Method of manufacturing an integrated optical component comprising a thick waveguide coupled to a thin waveguide
    2.
    发明授权
    Method of manufacturing an integrated optical component comprising a thick waveguide coupled to a thin waveguide 有权
    制造集成光学部件的方法，其包括耦合到薄波导的厚波导

    公开(公告)号：US6040246A

    公开(公告)日：2000-03-21

    申请号：US148480

    申请日：1998-09-08

    申请人： Leon Goldstein ,  Denis Leclerc ,  Beatrice Dagens

    发明人： Leon Goldstein ,  Denis Leclerc ,  Beatrice Dagens

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  H01S5/026 ,  H01L21/02 ,  G02B6/13 ,  G02B6/136 ,  H01L21/20 ,  H01L21/3065

    CPC分类号： G02B6/26 ,  G02B6/12004 ,  G02B6/1228 ,  H01S5/026

    摘要： To form an integrated optical component comprising a thick waveguide coupled to a thin waveguide, the method consists in:depositing a first guiding layer of said thick waveguide on a substrate;locally etching said first guiding layer over a portion allocated both to a coupling interface and to the thin waveguide;depositing a second guiding layer on the first guiding layer and on the locally etched portion so as to form said thick waveguide in a manner such that it has a maximum thickness in a first zone, a graded-thickness section in a second zone, and a reduced-thickness section in a third zone;locally etching the second guiding layer over a portion of the third zone, said portion being allocated to the thin waveguide; anddepositing a third guiding layer in said portion of said third zone so as to form said thin waveguide.

    摘要翻译： 为了形成包括耦合到薄波导的厚波导的集成光学部件，该方法包括：在衬底上沉积所述厚波导的第一引导层; 在分配给耦合接口和薄波导的部分上局部蚀刻所述第一引导层; 在第一引导层和局部蚀刻部分上沉积第二引导层，以便形成所述厚波导，使得其在第一区域具有最大厚度，在第二区域中具有最大厚度，在第二区域中具有渐变厚度部分， 第三区的厚度减薄部分; 在第三区域的一部分上局部蚀刻第二引导层，所述部分被分配给薄波导; 以及在所述第三区的所述部分中沉积第三引导层以形成所述薄波导。

    OPTOELECTRONIC COMPONENT COMPRISING A DIFFRACTION GRATING WITH A TRANSVERSE STRUCTURE
    3.
    发明申请
    OPTOELECTRONIC COMPONENT COMPRISING A DIFFRACTION GRATING WITH A TRANSVERSE STRUCTURE 有权
    包含横向结构的衍射光栅的光电元件

    公开(公告)号：US20080193084A1

    公开(公告)日：2008-08-14

    申请号：US11963674

    申请日：2007-12-21

    申请人： Alain ACCARD ,  Olivier Drisse ,  Beatrice Dagens ,  Helene Sillard

    发明人： Alain ACCARD ,  Olivier Drisse ,  Beatrice Dagens ,  Helene Sillard

    IPC分类号： G02B6/34 ,  B29D11/00

    CPC分类号： G02B6/124 ,  G02B6/131 ,  G02B6/136

    摘要： The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, said layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.

    摘要翻译： 本发明的领域是具有掩埋条纹结构的光电子部件。 根据本发明的光电子器件是条形结构，其包括至少一个掩埋波导和称为格子层的层，其中细长条形状包括特征，每个特征具有大致矩形形状，特征的长度基本上 垂直于光栅层的条纹长度的方向，所述层被放置成与在波导中传播的光波提供光耦合，某些特征的长度基本上小于波导的宽度。

    Semiconductor optical device having a clamped carrier density
    4.
    发明申请
    Semiconductor optical device having a clamped carrier density 审中-公开
    具有夹紧载流子密度的半导体光学器件

    公开(公告)号：US20070086082A1

    公开(公告)日：2007-04-19

    申请号：US11546564

    申请日：2006-10-12

    申请人： Beatrice Dagens

    发明人： Beatrice Dagens

    IPC分类号： H01S3/00

    CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/341 ,  H01S5/5072

    摘要： The field of the invention is that of semiconductor devices used for the amplification or for the phase modulation of optical signals. These devices are known by the generic names SOA (semiconductor optical amplifier) and DPSK (differential phase shift keying) modulators. The main drawbacks of this type of device are that it is, on the one hand, difficult to obtain a constant gain, and, on the other hand, it is difficult for the optical signal to be independently amplitude-modulated and phase-modulated. The device according to the invention does not have these drawbacks. It relies essentially on three principles: the active zone of the device has a quantum dot structure, the atoms of said structure possessing a first energy transition state called the ground state and a second energy transition state called the excited state; the active zone is placed in a structured resonant cavity in order to resonate at a first wavelength corresponding to the ground state; and the current flowing through the active zone is greater than the saturation current of the ground state so as to allow oscillation at a second wavelength corresponding to the excited state.

    摘要翻译： 本发明的领域是用于光信号的放大或相位调制的半导体器件领域。 这些器件通过通用名称SOA（半导体光放大器）和DPSK（差分相移键控）调制器而知道。 这种装置的主要缺点是，一方面难以获得恒定的增益，另一方面，光信号难以独立地进行调幅和相位调制。 根据本发明的装置不具有这些缺陷。 它基本上依赖于三个原理：器件的有源区具有量子点结构，所述结构的原子具有称为基态的第一能量跃迁状态和称为激发态的第二能量过渡态; 有源区域被放置在结构化谐振腔中，以便以对应于基态的第一波长谐振; 并且流过有源区的电流大于基态的饱和电流，以允许在对应于激发态的第二波长处的振荡。

    Compact polarizer and associated device for semiconductor devices
    5.
    发明申请
    Compact polarizer and associated device for semiconductor devices 失效
    用于半导体器件的紧凑偏振器和相关器件

    公开(公告)号：US20070086692A1

    公开(公告)日：2007-04-19

    申请号：US11546559

    申请日：2006-10-12

    申请人： Beatrice Dagens ,  Guang-Hua Duan

    发明人： Beatrice Dagens ,  Guang-Hua Duan

    IPC分类号： G02B6/00

    CPC分类号： G02B6/29352 ,  G02B6/12007 ,  G02B6/126 ,  G02B6/274 ,  G02B6/2766

    摘要： The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.

    摘要翻译： 本发明的领域是特别用于光纤通信的半导体光学器件的领域。 为了有效地工作，一定数量的半导体器件需要使用在给定偏振状态下偏振的光。 当知道偏振状态时，根据本发明的光学元件使得可以以已知的偏振状态再次偏振光。 通过将这些元件中的两个与耦合器组合使用，可以产生实现与偏振分离器相同功能的装置。 该光学组件传递两个输出信号，其极化状态是初始偏振在两个正交轴上的投影。 这些器件的主要优点是它们是使用基于光子晶体的偏振旋转器制造的，因此它们可以容易地集成到半导体器件中，这使得离散偏振器的使用不允许。

    Integrated interferometer structure
    6.
    发明授权
    Integrated interferometer structure 有权
    集成干涉仪结构

    公开(公告)号：US6035078A

    公开(公告)日：2000-03-07

    申请号：US148187

    申请日：1998-09-04

    申请人： Beatrice Dagens ,  Christopher Janz

    发明人： Beatrice Dagens ,  Christopher Janz

    IPC分类号： G02F2/02 ,  G02F1/225 ,  G02F1/35 ,  H01S5/026 ,  H01S5/06 ,  H01S5/10 ,  H01S5/50 ,  G02B6/12 ,  G01B9/02 ,  H04J14/00

    CPC分类号： H01S5/50 ,  G02F1/3517 ,  G02F1/2257 ,  H01S5/026 ,  H01S5/0601 ,  H01S5/1003

    摘要： An integrated interferometer structure, in particular for optical signal wavelength converters, includes a first branch and a second branch including at least a first semiconductor optical amplifier coupled to input and/or output peripheral semiconductor optical amplifiers. The structure includes an attenuation section between the output of at least one amplifier of one branch and the input of the output peripheral amplifier and/or the length of the waveguide of at least one peripheral amplifier is less than 300 .mu.m. Applications in telecommunications, in particular for routing signals.

    摘要翻译： 特别是用于光信号波长转换器的集成干涉仪结构包括第一分支和第二分支，其包括耦合到输入和/或输出外围半导体光放大器的至少第一半导体光放大器。 该结构包括在一个分支的至少一个放大器的输出与输出外围放大器的输入和/或至少一个外围放大器的波导的长度之间的衰减部分小于300μm。 电信应用，特别是路由信号。

    Semiconductor optical amplifier with lateral and distributed gain stabilisation
    7.
    发明授权
    Semiconductor optical amplifier with lateral and distributed gain stabilisation 失效
    具有横向和分布增益稳定的半导体光放大器

    公开(公告)号：US07643207B2

    公开(公告)日：2010-01-05

    申请号：US10530690

    申请日：2003-10-10

    申请人： Beatrice Dagens ,  Romain Brenot ,  Guang-Hua Duan ,  Thierry Hessler

    发明人： Beatrice Dagens ,  Romain Brenot ,  Guang-Hua Duan ,  Thierry Hessler

    IPC分类号： H04B10/17

    CPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/10 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/4087 ,  H01S5/5063 ,  H01S5/5072 ,  H01S5/5081

    摘要： A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.

    摘要翻译： 稳定增益半导体光放大器（CG-SOA）包括和主动波导（1），其包括在纵向（Z），横向（X）和垂直（Y）方向上延伸的放大介质（2），并耦合到激光振荡 结构包括在第一（D1）和第二（D2）方向上延伸的至少两个谐振腔（13,14），其不同于有源波导（1）的纵向方向（Z），并且以允许 建立具有至少两个不同弛豫振荡频率的激光振荡。

    Optical device with integrated semi-conductor laser source and integrated optical isolator
    8.
    发明申请
    Optical device with integrated semi-conductor laser source and integrated optical isolator 有权
    集成半导体激光源和集成光隔离器的光学器件

    公开(公告)号：US20070064753A1

    公开(公告)日：2007-03-22

    申请号：US11483182

    申请日：2006-07-10

    申请人： Alain Accard ,  Beatrice Dagens

    发明人： Alain Accard ,  Beatrice Dagens

    IPC分类号： H01S3/14

    CPC分类号： G02F1/0955 ,  H01S5/0064 ,  H01S5/026

    摘要： The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.

    摘要翻译： 本发明的领域是包括集成半导体激光器和集成光隔离器的光学器件的领域。 这些设备主要用于数字电信领域。 更具体地，本发明适用于所谓的吸收隔离器，其复数指数是不可逆的，并且取决于光的传播方向。 通常，这种类型的集成光隔离器具有两种功能。 一方面，它们包括确保不可逆效应的磁光层，另一方面是确保激光束放大的有源区域，电荷载体进入活性区域的注入由电接触确保 层。 本发明提出，为了限制接触层对激光束的传播的干扰作用，接触层在有源区上方被去除，并且通过侧面和边缘确保电荷载体的注入 的活动区域的上表面。

    Optical component based on semi-conductor optical amplifiers having a reduced number of independent electrodes
    10.
    发明授权
    Optical component based on semi-conductor optical amplifiers having a reduced number of independent electrodes 有权
    基于具有减少数量的独立电极的半导体光放大器的光学部件

    公开(公告)号：US06215935B1

    公开(公告)日：2001-04-10

    申请号：US09443454

    申请日：1999-11-19

    申请人： Beatrice Dagens ,  Christopher Janz

    发明人： Beatrice Dagens ,  Christopher Janz

    IPC分类号： G02B610

    CPC分类号： G02F2/004 ,  G02F1/025 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/50

    摘要： The invention relates to an optical component based on semi-conductor optical amplifiers in which the number of independent electrodes is reduced. The component has different regions (1, 2, 3, 4, 5) with the same vertical structure wherein an active waveguide (20) is buried between the upper and lower buffer layers. These regions each have lower and upper electrodes (10, E2, E4) for the purpose of injecting into them equal or different values of current density. This component is characterized in that at least one (10) of the said electrodes covers a number of regions (1, 3, 5) and has distributed resistivity which is adjusted depending on the region under consideration.

    摘要翻译： 本发明涉及一种基于半导体光放大器的光学部件，其中独立电极的数目减少。 该组件具有不同的具有相同垂直结构的区域（1,2,3,4,5），其中有源波导（20）被埋在上缓冲层和下缓冲层之间。 这些区域各自具有下电极和上电极（10，E2，E4），用于向其注入等电流密度或不同的电流密度值。 该部件的特征在于，所述电极中的至少一个（10）覆盖多个区域（1,3,5），并且具有根据所考虑的区域调整的分布电阻率。