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    High permeability composite films to reduce noise in high speed interconnects
    1.
    发明申请
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US20060261448A1

    公开(公告)日：2006-11-23

    申请号：US11494081

    申请日：2006-07-27

    申请人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    IPC分类号： H01L39/00

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 存储器件具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    High permeability layered films to reduce noise in high speed interconnects
    3.
    发明申请
    High permeability layered films to reduce noise in high speed interconnects 有权
    高磁导率分层膜，以降低高速互连中的噪声

    公开(公告)号：US20050030803A1

    公开(公告)日：2005-02-10

    申请号：US10930657

    申请日：2004-08-31

    申请人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    IPC分类号： G11C5/06 ,  H01P1/18

    CPC分类号： G11C5/063 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/53209 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of layered high permeability shielding lines are formed on the first layer of insulating material. The pair of layered high permeability shielding lines include layered permalloy and/or Ni45Fe55 films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of layered high permeability shielding lines.

    摘要翻译： 本发明提供了一种用于改进集成电路上的传输线操作的结构和方法。 本发明的一种方法包括在集成电路中形成传输线。 该方法包括在衬底上形成第一导电材料层。 第一层绝缘材料形成在导电材料的第一层上。 在第一层绝缘材料上形成一层分层的高磁导率屏蔽线。 一对分层的高渗透性屏蔽线包括层状坡莫合金和/或Ni45Fe55薄膜。 传输线形成在第一绝缘材料层上并且与一对分层的高磁导率屏蔽线平行。

    High permeability composite films to reduce noise in high speed interconnects
    4.
    发明申请
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US20050006727A1

    公开(公告)日：2005-01-13

    申请号：US10910676

    申请日：2004-08-03

    申请人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    IPC分类号： G11C7/18 ,  H01L23/522 ,  H03K17/16 ,  H01L29/06 ,  H03K19/003

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An electronic system is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 电子系统具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在第一绝缘材料层上并且与高磁导率金属线平行。 在传输线和一对高导磁性金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    High permeability composite films to reduce noise in high speed interconnects
    6.
    发明申请
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US20050017327A1

    公开(公告)日：2005-01-27

    申请号：US10914331

    申请日：2004-08-09

    申请人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    IPC分类号： G11C7/18 ,  H01L23/522 ,  H01P5/12

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A transmission line circuit provides a structure for improved transmission line operation on integrated circuits. The transmission line circuit includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The transmission line circuit includes forming a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 传输线电路提供用于改进集成电路上的传输线操作的结构。 传输线电路在衬底上包括第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 传输线电路包括在第二绝缘材料层上形成第二层导电材料。

    High permeability composite films to reduce noise in high speed interconnects
    8.
    发明申请
    High permeability composite films to reduce noise in high speed interconnects 失效
    高磁导率复合薄膜可降低高速互连中的噪声

    公开(公告)号：US20050007817A1

    公开(公告)日：2005-01-13

    申请号：US10910399

    申请日：2004-08-03

    申请人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    发明人： Leonard Forbes ,  Kie Ahn ,  Salman Akram

    IPC分类号： G11C7/18 ,  H01L23/522 ,  H03K17/16

    CPC分类号： G11C7/02 ,  G11C7/18 ,  H01L23/5225 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A number of high permeability metal lines are formed on the first layer of insulating material. The number of high permeability metal lines includes composite hexaferrite films. A number of transmission lines is formed on the first layer of insulating material and between and parallel with the number of high permeability metal lines. A second layer of insulating material is formed on the transmission lines and the high permeability metal lines. The structure for transmission line operation includes a second layer of electrically conductive material on the second layer of insulating material.

    摘要翻译： 存储器件具有用于改善集成电路上的传输线操作的结构。 用于传输线操作的结构包括在衬底上的第一层导电材料。 第一层绝缘材料形成在导电材料的第一层上。 在第一绝缘材料层上形成多个高磁导率金属线。 高渗透性金属线的数量包括复合六铁氧体膜。 多个传输线形成在绝缘材料的第一层上并且与多个高导磁率金属线之间并且平行。 在传输线和高磁导率金属线上形成第二层绝缘材料。 用于传输线操作的结构包括在第二绝缘材料层上的第二层导电材料。

    Strained semiconductor by full wafer bonding
    9.
    发明授权
    Strained semiconductor by full wafer bonding 有权
    应变半导体通过全晶圆键合

    公开(公告)号：US07989311B2

    公开(公告)日：2011-08-02

    申请号：US12243617

    申请日：2008-10-01

    申请人： Leonard Forbes ,  Joseph E. Geusic ,  Salman Akram

    发明人： Leonard Forbes ,  Joseph E. Geusic ,  Salman Akram

    IPC分类号： H01L21/425 ,  H01L21/76

    CPC分类号： H01L21/76254

    摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.

    摘要翻译： 本公开的一个方面涉及一种用应变半导体形成晶片的方法。 在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。 将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。 在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变 层。 本文提供了其它方面和实施例。

    STRAINED SEMICONDUCTOR BY FULL WAFER BONDING
    10.
    发明申请
    STRAINED SEMICONDUCTOR BY FULL WAFER BONDING 有权
    应变半导体通过全波束焊接

    公开(公告)号：US20090042360A1

    公开(公告)日：2009-02-12

    申请号：US12243617

    申请日：2008-10-01

    申请人： Leonard Forbes ,  Joseph E. Geusic ,  Salman Akram

    发明人： Leonard Forbes ,  Joseph E. Geusic ,  Salman Akram

    IPC分类号： H01L21/425

    CPC分类号： H01L21/76254

    摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.

    摘要翻译： 本公开的一个方面涉及一种用应变半导体形成晶片的方法。 在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。 将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。 在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变 层。 本文提供了其它方面和实施例。